公开(公告)号：EP2368632B1

公开(公告)日：2020-04-22

申请号：EP11250345.3

申请日：2011-03-18

Applicant: NGK Insulators, Ltd.

Inventor： Kikuchi, Yoshio ,  Otsuka, Haruo

IPC: B01J29/06 ,  B01J35/04 ,  B01D53/94

公开(公告)号：EP3318648B1

公开(公告)日：2020-02-19

申请号：EP17770436.8

申请日：2017-03-24

Applicant: NGK Insulators, Ltd. ,  National University Corporation Yokohama National University

Inventor： TAKEDA, Mahoto ,  SASAKI, Koudai ,  MURAMATSU, Naokuni ,  NAKAJIMA, Takanari

IPC: C22C9/02 ,  C22C9/01 ,  C22C9/05 ,  C22F1/08 ,  C22F1/00

公开(公告)号：EP3598485A3

公开(公告)日：2020-02-12

申请号：EP19195538.4

申请日：2016-12-22

Applicant: NGK Insulators, Ltd.

Inventor： TANI, Makoto ,  AWAKURA, Yasutaka ,  KAKU, Takeshi ,  EBIGASE, Takashi

IPC: H01L23/15 ,  H01L21/48

Abstract: Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.

公开(公告)号：EP3604214A1

公开(公告)日：2020-02-05

申请号：EP17901815.5

申请日：2017-03-22

Applicant: NGK Insulators, Ltd.

Inventor： KOBAYASHI Hiroharu ,  IIDA Kazuki ,  KOBAYASHI Yoshimasa

IPC: C01B21/072 ,  C04B35/581

Abstract: Aluminum nitride particles used as a material of an aluminum nitride sintered compact are disclosed. The aluminum nitride particles may have a same crystal orientation. The aluminum nitride particles each have an aspect ratio of 3 or more, a plate-like shape, a planar length of 0.6 µm or more and 20 µm or less, and a thickness length of 0.05 µm or more and 2 µm or less.

公开(公告)号：EP2792396B1

公开(公告)日：2019-11-27

申请号：EP14159741.9

申请日：2014-03-14

Applicant: NGK Insulators, Ltd.

Inventor： Kikuchi, Yoshio ,  Suzuki, Takashi

IPC: B01D46/24 ,  F01N3/20 ,  F01N3/28 ,  C04B26/28 ,  C04B35/565 ,  C04B38/00

公开(公告)号：EP2554262B1

公开(公告)日：2019-11-27

申请号：EP11765673.6

申请日：2011-03-30

Applicant: NGK Insulators, Ltd.

Inventor： AOYAMA, Tomokatsu ,  MIZUTANI, Takashi

IPC: B01J35/04 ,  B01D46/00 ,  B01D53/94 ,  B01J23/656 ,  F01N3/022 ,  F01N3/28 ,  B01J37/02 ,  C04B38/00

公开(公告)号：EP2664599B1

公开(公告)日：2019-11-20

申请号：EP13160979.4

申请日：2013-03-26

Applicant: NGK Insulators, Ltd.

Inventor： OMORI, Takeshi ,  IWATA, Koichi ,  ABE, Masahiro

IPC: C04B35/486 ,  C04B35/626 ,  C04B35/634 ,  G01N33/00 ,  B32B18/00 ,  C04B35/111 ,  C04B35/14 ,  C04B35/453 ,  C04B35/46

公开(公告)号：EP2803991B1

公开(公告)日：2019-11-13

申请号：EP14167745.0

申请日：2014-05-09

Applicant: NGK Insulators, Ltd.

Inventor： Nakasone, Osamu ,  Niizuma, Shotarou ,  Hirata, Noriko ,  Nakayama, Yuki

IPC: G01N27/419 ,  G01N33/00

公开(公告)号：EP2784498B1

公开(公告)日：2019-11-13

申请号：EP14162291.0

申请日：2014-03-28

Applicant: NGK Insulators, Ltd.

Inventor： Hirata, Shodai ,  Koganei, Takehiro ,  Ikoma, Nobukazu

IPC: G01N27/407 ,  G01N33/00

公开(公告)号：EP2980045B1

公开(公告)日：2019-10-16

申请号：EP14774575.6

申请日：2014-02-24

Applicant: NGK Insulators, Ltd.

Inventor： GOTO, Masashi ,  KOBAYASHI, Yoshimasa

IPC: C04B35/49 ,  H01B3/12 ,  H01B17/60