摘要:
The present invention refers to a brass alloy, wherein Al2O3 is present in the alloy in the form of ceramic nanoparticles. Furthermore the invention refers to a method for production of the brass alloy.
摘要翻译:本发明涉及一种黄铜合金,其中Al 2 O 3以陶瓷纳米颗粒的形式存在于合金中。 此外,本发明涉及一种生产黄铜合金的方法。
摘要:
The present invention relates to a copper alloy for electric and electronic device, a copper alloy sheet for electric and electronic device, a conductive component for electric and electronic device, and a terminal. The copper alloy for electric and electronic device includes more than 2.0 mass% to 15.0 mass% of Zn; 0.10 mass% to 0.90 mass% of Sn; 0.05 mass% to less than 1.00 mass% of Ni; 0.001 mass% to less than 0.100 mass% of Fe; 0.005 mass% to 0.100 mass% of P; and a remainder comprising Cu and unavoidable impurities, in which 0.002‰¤Fe/Ni
摘要:
The present invention relates to a copper alloy for electric and electronic device, a copper alloy sheet for electric and electronic device, a conductive component for electric and electronic device, and a terminal. The copper alloy for electric and electronic device comprises more than 2.0 mass% and less than 23.0 mass% of Zn; 0.10 mass% to 0.90 mass% of Sn; 0.05 mass% to less than 1.00 mass% of Ni; 0.001 mass% to less than 0.100 mass% of Fe; 0.005 mass% to 0.100 mass% of P; and a balance including Cu and unavoidable impurities, in which 0.002‰¤Fe/Ni
摘要:
A copper alloy according to the present invention includes 17 mass% to 34 mass% of Zn, 0.02 mass% to 2.0 mass% of Sn, 1.5 mass% to 5 mass% of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12≤f1=[Zn]+5×[Sn]-2×[Ni]≤30, 10≤[Zn]-0.3×[Sn]-2×[Ni]≤28, 10≤f3={f1×(32-f1)×[Ni]} 1/2 ≤33, 1.2≤0.7×[Ni]+[Sn]≤4, and 1.4≤[Ni]/[Sn]≤90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an α phase is 99.5% or more by area ratio or an area ratio of a γ phase (γ)% and an area ratio of a β phase (β)% in an α phase matrix satisfy a relationship of 0≤2×(γ)+(β)≤0.7.
摘要:
A copper alloy for fastening wherein the alloy has a structure of a mixture of ±-phase and a ²-phase; and wherein the alloy has a composition represented by the general formula: Cu bal .Zn a Mn b , where bal., a, and b are expressed in % by mass, bal. represents the balance, 34 ‰¤ a ‰¤ 40.5, 0.1 ‰¤ b ‰¤ 6, and inevitable impurities may be contained; and the composition satisfying the following equations (1) and (2): b ‰¤ (-8a + 300)/7, where 34 ‰¤ a
摘要:
A copper alloy for an electronic device is provided wherein the copper alloy is composed of a binary alloy of Cu and Mg, the binary alloy comprises Mg at a content in a range of 3.3 to 6.9 atomic%, with a remainder being Cu and inevitable impurities, a conductivity σ (%IACS) is within the following range when the content of Mg is given as A atomic%, σ ≤ {1.7241/(-0.0347×A 2 +0.6569×A+1.7)× 100, and the copper alloy is a Cu-Mg solid solution alloy supersaturated with Mg.