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    AMORPHOUS MATERIAL AND THE USE THEREOF
    41.
    发明公开
    AMORPHOUS MATERIAL AND THE USE THEREOF 有权
    维多利亚·戴文

    公开(公告)号：EP3041851A1

    公开(公告)日：2016-07-13

    申请号：EP14765892.6

    申请日：2014-09-02

    Applicant: BASF SE

    Inventor： HERMES, Wilfried ,  BRUDER, Ingmar ,  ERK, Peter ,  WALDMANN, Daniel

    IPC: C07F7/24 ,  B82Y10/00 ,  H01G9/20 ,  H01L51/42 ,  C07C211/65

    CPC classification number: H01L51/0077 ,  B82Y30/00 ,  C07C209/60 ,  C07C211/04 ,  C07C211/65 ,  H01L27/28 ,  H01L27/302 ,  H01L33/502 ,  H01L51/0558 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/424 ,  H01L51/5012 ,  Y02E10/549

    Abstract: The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R
    1 NR
    2
    3 )
    5 Me X
    1
    a X
    2
    b wherein R
    1 is C
    1 -C
    4 -alkyl, R
    2 are independently of one another hydrogen or C
    1 -C
    4 -alkyl, Me is a divalent metal, X
    1 and X
    2 have different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.

    Abstract translation: 本发明涉及一种新的无定形材料，其具有作为各种用途的电荷传输材料和/或吸收材料的有利特性，特别是在光电转换装置中，即组合物（R1NR23）5Me X1aX2b的无定形材料，其中R1是C1-C4 - 烷基，R 2彼此独立地为氢或C 1 -C 4烷基，Me为二价金属，X 1和X 2具有不同的含义并且彼此独立地选自F，Cl，Br，I或拟卤化物，a和 b彼此独立地为0至7，其中a和b之和为7。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    50.
    发明公开
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权
    用于生产有机场效应晶体管

    公开(公告)号：EP2022105A1

    公开(公告)日：2009-02-11

    申请号：EP07728760.5

    申请日：2007-05-03

    Applicant: BASF SE ,  The Board of Trustees of The Leland Stanford Junior University

    Inventor： KÖNEMANN, Martin ,  ERK, Peter ,  LING, Mang-Mang ,  BAO, Zhenan

    IPC: H01L51/00 ,  H01L51/05

    CPC classification number: H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    Abstract: A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula (I) wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

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