公开(公告)号：EP0005543B1

公开(公告)日：1983-07-27

申请号：EP79101501.9

申请日：1979-05-16

申请人： Hitachi, Ltd.

发明人： Maruyama, Eiichi ,  Imamura, Yoshinori ,  Ataka, Saburo ,  Inao, Kiyohisa ,  Takasaki, Yukio ,  Tsukada, Toshihisa ,  Hirai, Tadaaki

IPC分类号： H01J29/45 ,  H01J9/233

CPC分类号： H01J29/45

公开(公告)号：EP0031663A3

公开(公告)日：1982-04-21

申请号：EP80304490

申请日：1980-12-12

申请人： Hitachi, Ltd.

发明人： Imamura, Yoshinori ,  Tanaka, Yasuo ,  Ataka, Saburo ,  Hirai, Tadaaki ,  Takasaki, Yukio ,  Maruyama, Elichi

IPC分类号： H01J29/45

CPC分类号： H01L31/095 ,  H01J9/233 ,  H01J29/456

摘要： Disclosed is a photoelectric device used in the storage mode, particularly a photosensitive panel which can be employed as the photoconductive target in an image tube. It comprises a signal electrode (2) on a transparent substrate (1). An amorphous photoconductor layer (3) whose principal constituent is silicon and which contains hydrogen is disposed in adjacency to the signal electrode. To suppress dark current, a thin layer (8) is interposed between the signal electrode (2) and the amorphous photoconductor layer (3), the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from oxides of εi, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La. Be, Sc and Co, nitrides of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of Na, Mg, Li, Ba, Ca and K.

公开(公告)号：EP0031663A2

公开(公告)日：1981-07-08

申请号：EP80304490.8

申请日：1980-12-12

申请人： Hitachi, Ltd.

发明人： Imamura, Yoshinori ,  Tanaka, Yasuo ,  Ataka, Saburo ,  Hirai, Tadaaki ,  Takasaki, Yukio ,  Maruyama, Elichi

IPC分类号： H01J29/45

CPC分类号： H01L31/095 ,  H01J9/233 ,  H01J29/456

摘要： Disclosed is a photoelectric device used in the storage mode, particularly a photosensitive panel which can be employed as the photoconductive target in an image tube. It comprises a signal electrode (2) on a transparent substrate (1). An amorphous photoconductor layer (3) whose principal constituent is silicon and which contains hydrogen is disposed in adjacency to the signal electrode. To suppress dark current, a thin layer (8) is interposed between the signal electrode (2) and the amorphous photoconductor layer (3), the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from oxides of εi, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La. Be, Sc and Co, nitrides of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of Na, Mg, Li, Ba, Ca and K.

公开(公告)号：EP0029679A2

公开(公告)日：1981-06-03

申请号：EP80304022.9

申请日：1980-11-11

申请人： Hitachi, Ltd.

发明人： Takasaki, Yukio ,  Hirai, Tadaaki ,  Yamamoto, Hideaki ,  Tsukada, Toshihisa ,  Mori, Yoshiaki

IPC分类号： H01L31/08 ,  H01L27/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14665

摘要： A photosensor having a metal electrode 12, at least one photoelectric conversion layer 10 which covers the metal electrode 12, and a transparent or partly transparent conductive layer 9 which covers the photoelectric conversion layer 1 2 is characterized in that a recombination layer 11 for recombining electrons and holes is disposed between the metal electrode 12 and the photoelectric conversion layer 10. The recombination layer 11 enables a metal electrode 12 having an insulating oxide film on its surface to be used in a photoelectric device as if the insulating oxide film were non-existent. In prior art photosensors lacking such a layer the current which flows when the device is in the dark is not suppressed and this results in a bad photo response. The present invention suppresses such current and thus improves the photo response of the photosensor.

摘要翻译： 具有金属电极12，至少一个覆盖金属电极12的光电转换层10和覆盖光电转换层12的透明或部分透明的导电层9的光电传感器的特征在于：用于使电子复合的复合层11和 在金属电极12和光电转换层10之间设置有孔。复合层11使得其表面上具有绝缘氧化物膜的金属电极12能够用于光电装置中，就好像绝缘氧化物膜不存在一样。 在缺乏这种层的现有技术光电传感器中，当装置处于黑暗中时流动的电流不受抑制，并且这导致不良的光响应。 本发明抑制了这种电流，从而改善了光电传感器的光响应。

公开(公告)号：EP0020175A2

公开(公告)日：1980-12-10

申请号：EP80301842.3

申请日：1980-06-03

申请人： Hitachi, Ltd.

发明人： Koike, Norio ,  Tsukada, Toshihisa c/o Patent Dept. Hitachi Ltd. ,  Ando, Haruhisa ,  Yamamoto, Hideaki ,  Hirai, Tadaaki ,  Kubo, Masaharu ,  Maruyama, Eiichi ,  Baji, Toru ,  Takasaki, Yukio ,  Nagahara, Shusaku

IPC分类号： H01L27/14

CPC分类号： H01L27/14665

摘要： A solid-state imaging device has a semiconductor integrated circuit in which a plurality of switching elements (15) for addressing positions of picture elements and scanning circuitry for turning the switching elements «on» and «co» in time sequence are disposed on a substrate (14). A photoconductive film (25) is disposed on the integrated circuit and is connected with the respective switching elements by electrodes (24). A light transmitting electrode (26) is disposed on the photoconductive film, a voltage being applied (at 27) to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side. Each switching element (25) is an element which uses carriers of a polarity opposite to that of the carriers having a greater mobility in the photoconductive film (26). This improves build-up of charges on the electrode (24) and thus increases the photosensitivity.

摘要翻译： 固态成像装置具有半导体集成电路，其中用于寻址用于转换开关元件<< on >>和<< off >>的图像元素和扫描电路的多个开关元件（15）按时间顺序是“ 设置在基板（14）上。 光电导膜（25）设置在集成电路上，并通过电极（24）与各个开关元件连接。 光传导电极（26）设置在光电导膜上，电压（27）施加到透光电极，从而将光导入膜的光导入侧的区域相对于区域正或负地偏置 在相对侧。 每个开关元件（25）是使用与光电导膜（26）中迁移率较高的载流子极性相反的载流子的元件。 这改善了电极（24）上的电荷积累，从而增加了光敏性。