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    Electrophotographic member and electrophotographic apparatus including the member
    3.
    发明公开
    Electrophotographic member and electrophotographic apparatus including the member 失效
    电子成像器和电子显示设备，包括会员

    公开(公告)号：EP0045204A3

    公开(公告)日：1982-02-24

    申请号：EP81303422

    申请日：1981-07-24

    申请人： Hitachi, Ltd.

    发明人： Ishioka, Sachio ,  Maruyama, Eiichi ,  Imamura, Yoshinori ,  Matsubara, Hirokazu ,  Horigome, Shinkichi

    IPC分类号： G03G05/082

    CPC分类号： G03G5/08235 ,  G03G5/144 ,  G03G5/14704

    摘要： An electrophotographic member has a support (1) and a photoconductor layer (2) on the support formed mainly of amorphous silicon. Improved characteristics of the layer (2) are obtained when the amorphous silicon contains on average at least 50 atomic-% silicon and at least 1 atomic-% hydrogen and a surface part (23, 25) at least 10 nm thick extending from a surface of the layer toward its interior has a hydrogen content of 1 to 40 atomic-% an optical forbidden band gap of 1.3 to 2.5 eV and an infrared absorption spectrum in which the intensity of at least one of the peaks centered approximately at wave numbers 2,200 cm -1 , 1,140 cm -1 , 1,040 cm -1 , 650 cm -1 , 860 cm- 1 and 800 cm -1 and attributed silicon-oxygen bonds does not exceed 20% of the intensity of the higher of the peaks centered at approximately wave numbers 2,000 cm-1 and 2,100 cm -1 and attributed silicon-hydrogen bonds. Dark decay characteristics are good, and a satisfactory surface potential can be achieved. In addition, the characteristics of the member are stable with time.

    Electrophotographic member and electrophotographic apparatus including the member
    7.
    发明公开
    Electrophotographic member and electrophotographic apparatus including the member 失效
    元素和电子照相术仪器，电子元器件。

    公开(公告)号：EP0045204A2

    公开(公告)日：1982-02-03

    申请号：EP81303422.0

    申请日：1981-07-24

    申请人： Hitachi, Ltd.

    发明人： Ishioka, Sachio ,  Maruyama, Eiichi ,  Imamura, Yoshinori ,  Matsubara, Hirokazu ,  Horigome, Shinkichi

    IPC分类号： G03G5/082

    CPC分类号： G03G5/08235 ,  G03G5/144 ,  G03G5/14704

    摘要： An electrophotographic member has a support (1) and a photoconductor layer (2) on the support formed mainly of amorphous silicon. Improved characteristics of the layer (2) are obtained when the amorphous silicon contains on average at least 50 atomic-% silicon and at least 1 atomic-% hydrogen and a surface part (23, 25) at least 10 nm thick extending from a surface of the layer toward its interior has a hydrogen content of 1 to 40 atomic-% an optical forbidden band gap of 1.3 to 2.5 eV and an infrared absorption spectrum in which the intensity of at least one of the peaks centered approximately at wave numbers 2,200 cm -1 , 1,140 cm -1 , 1,040 cm -1 , 650 cm -1 , 860 cm- 1 and 800 cm -1 and attributed silicon-oxygen bonds does not exceed 20% of the intensity of the higher of the peaks centered at approximately wave numbers 2,000 cm-1 and 2,100 cm -1 and attributed silicon-hydrogen bonds. Dark decay characteristics are good, and a satisfactory surface potential can be achieved. In addition, the characteristics of the member are stable with time.

    摘要翻译： 电子照相构件在主要由非晶硅形成的支撑件上具有支撑体（1）和感光体层（2）。 当非晶硅平均含有至少50原子％的硅和至少1原子％的氢以及从表面延伸至少10nm厚的表面部分（23,25）时，获得了层（2）的改进的特性。 的层向其内部具有1至40原子％的氢含量为1.3至2.5eV的光学禁止带隙和其中至少一个峰值的强度以波数2,200厘米为中心的红外吸收光谱 1,040厘米<1>，650厘米<1>，860厘米-1和800厘米-1 <1> 并且归因于硅 - 氧键不超过集中在近似波数2,000厘米-1和2,100厘米-1的峰的较高峰的强度的20％，并归因于硅 - 氢键。 黑暗衰变特性良好，可达到令人满意的表面电位。 此外，会员的特点随着时间的推移是稳定的。

    Method of producing an image pickup device
    10.
    发明公开
    Method of producing an image pickup device 失效
    制作图像拾取装置的方法

    公开(公告)号：EP0045203A3

    公开(公告)日：1982-05-19

    申请号：EP81303421

    申请日：1981-07-24

    申请人： Hitachi, Ltd.

    发明人： Ishioka, Sachio ,  Shimomoto, Yasuharu ,  Imamura, Yoshinori ,  Ataka, Saburo ,  Tanaka, Yasuo ,  Matsubara, Hirokazu ,  Takasaki, Yukio ,  Maruyama, Eiichi

    IPC分类号： H01J09/233

    CPC分类号： H01J9/233

    摘要： In preparing an image pickup device having hydrogen-containing amorphous silicon as a photoconductive layer (105), this layer is first formed on a substrate and is then heat-treated at 100 to 300°C. The image pickup characteristics of the amorphous silicon layer (105) are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially good results can be obtained when the amorphous silicon has (1) a hydrogen content is 5 to 30 atomic-%, (2) an optical forbidden band gap is 1.30 to 1.95 eV and (3) an infrared absorption spectrum in which the component of wave number 2000 cm-1 is larger than the component of wave number 2100 cm -1 In this case, adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.