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43 条记录 (耗时 0.01 秒)

    ELECTRON TUBE
    1.
    发明公开
    ELECTRON TUBE 有权
    电子管

    公开(公告)号：EP1670031A4

    公开(公告)日：2008-08-06

    申请号：EP04787794

    申请日：2004-09-09

    申请人： HAMAMATSU PHOTONICS KK

    发明人： SUYAMA MOTOHIRO ,  KYUSHIMA HIROYUKI ,  NEGI YASUHARU ,  FUKASAWA ATSUHITO ,  KAWAI YOSHIHIKO ,  EGAWA YASUYUKI ,  UCHIYAMA ATSUSHI ,  KIMURA SUENORI

    IPC分类号： H01J40/04 ,  H01J9/233 ,  H01J31/50 ,  H01J40/14 ,  H01J40/16 ,  H01J43/06

    CPC分类号： H01J40/16 ,  H01J9/233

    摘要： An electron tube (1) in which one end of an insulating tube (9) projects toward the inside part of an enclosure (2), and an avalanche photodiode (APD) (15) is provided to the one end of the insulating tube (9). The other end of the insulating tube (9) is connected to an outer stem (6) of the enclosure (2). An alkali source (27) is disposed inside the enclosure (2) so as to produce alkaline metal vapor and to form a photoelectric surface (11) in a predetermined area of the inner wall of the enclosure (2). The alkali source (27) is separated from the insulating tube (9) by separating members (21', 23', 26). The alkaline metal vapor produced when the electron tube (1) is fabricated does not deposit on the insulating tube (9) because of the presence of the separating members (21', 23', 26). The withstanding voltage between the enclosure (2) and the APD (15) does not lower, and deterioration of the efficiency of entrance of electrons into the APD (15) because of the adverse effect on the electric field inside the electron tube (1) in prevented.

    X-ray image intensifier and method of manufacturing the same
    2.
    发明公开
    X-ray image intensifier and method of manufacturing the same 失效
    Röntgenbildverstärker和sein Herstellungsverfahren。

    公开(公告)号：EP0331019A2

    公开(公告)日：1989-09-06

    申请号：EP89103206.2

    申请日：1989-02-23

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Anno, Hidero c/o Patent Division ,  Ono, Katsuhiro c/o Patent Division

    IPC分类号： H01J29/38 ,  H01J9/233

    CPC分类号： H01J9/12 ,  H01J29/385

    摘要： An X-ray image intensifier comprising a vacuum envelope and an input screen having an improved sen­sitivity and including a substrate disposed on the X-ray input side of the vacuum envelope, a phosphor layer (3) formed on the substrate (1) and a photocathode (6) formed on the phosphor layer (3). The phosphor layer (3) consists of columnar crystals extending in a direc­tion perpendicular to the substrate surface. The tip portions of the columnar crystals are deformed to close the upper portions of the clearances (2) formed between the columnar crystals.

    摘要翻译： 一种X射线图像增强器，包括真空外壳和具有改善的灵敏度的输入屏幕，并且包括设置在真空外壳的X射线输入侧的基板，形成在基板（1）上的荧光体层（3）和 在荧光体层（3）上形成的光电阴极（6）。 磷光体层（3）由垂直于衬底表面的方向延伸的柱状晶体组成。 柱状晶体的尖端部分变形，以封闭在柱状晶体之间形成的间隙（2）的上部。

    Photosensor
    4.
    发明公开
    Photosensor 失效
    Fotosensor。

    公开(公告)号：EP0005543A1

    公开(公告)日：1979-11-28

    申请号：EP79101501.9

    申请日：1979-05-16

    申请人： Hitachi, Ltd.

    发明人： Maruyama, Eiichi ,  Imamura, Yoshinori ,  Ataka, Saburo ,  Inao, Kiyohisa ,  Takasaki, Yukio ,  Tsukada, Toshihisa ,  Hirai, Tadaaki

    IPC分类号： H01J29/45 ,  H01J9/233

    CPC分类号： H01J29/45

    摘要： A photosensor, for instance such of an image tube, has at least a light-transmitting conductive layer (2) which is arranged on the side of light incidence, and a photoconductive layer (3) in which charges are stored in correspondence with the light incidence. At least a region of said photoconductive layer (3) for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is no lower than 10 10 Ω·cm.

    摘要翻译： 诸如图像管的光电传感器至少具有布置在光入射侧的透光导电层（2），并且光电导层（3）的电荷与光对应地存储 发病率。 用于存储电荷的所述光电导层（3）的至少一个区域由含有氢和硅作为其不可或缺的构成元素的非晶材料制成，其中硅占至少50原子％，氢占至少 10原子％和至多50原子％，其电阻率不低于10欧姆欧姆。厘米。

    X-ray image intensifier and method of manufacturing input screen
    5.
    发明公开
    X-ray image intensifier and method of manufacturing input screen 失效
    X射线图像增强器和制造输入屏幕的方法

    公开(公告)号：EP0403802A3

    公开(公告)日：1993-02-10

    申请号：EP90109377.3

    申请日：1990-05-17

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Anno, Hidero, Intellectual Property Division ,  Ono, Katsuhiro, Intellectual Property Division

    IPC分类号： H01J1/62 ,  H01J31/49 ,  H01J9/233

    CPC分类号： H01J29/385 ,  G01T1/28 ,  G21K4/00

    摘要： An X-ray image intensifier includes an input screen (26) for converting incident X-rays into photoelectrons, and an output screen for converting the photoelectrons into visible light. The input screen includes a phos­phor layer (38). The phosphor layer has a large number of columnar crystals (33) of a phosphor which have end faces constituting a smooth surface facing the output screen. A low-refractive-index layer (41) is formed on the phosphor layer and made of a material having a refractive index smaller than a refractive index of the phosphor, with respect to the light having a specified wavelength, at which the fluorescence of the phosphor is the most intensive. A photoemissive layer (43) is formed directly or indirectly on the low-refractive-­index layer.

    Method of producing an image pickup device
    9.
    发明公开
    Method of producing an image pickup device 失效
    一种用于制造图像拾取装置的过程。

    公开(公告)号：EP0045203A2

    公开(公告)日：1982-02-03

    申请号：EP81303421.2

    申请日：1981-07-24

    申请人： Hitachi, Ltd.

    发明人： Ishioka, Sachio ,  Shimomoto, Yasuharu ,  Imamura, Yoshinori ,  Ataka, Saburo ,  Tanaka, Yasuo ,  Matsubara, Hirokazu ,  Takasaki, Yukio ,  Maruyama, Eiichi

    IPC分类号： H01J9/233

    CPC分类号： H01J9/233

    摘要： In preparing an image pickup device having hydrogen-containing amorphous silicon as a photoconductive layer (105), this layer is first formed on a substrate and is then heat-treated at 100 to 300°C. The image pickup characteristics of the amorphous silicon layer (105) are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially good results can be obtained when the amorphous silicon has (1) a hydrogen content is 5 to 30 atomic-%, (2) an optical forbidden band gap is 1.30 to 1.95 eV and (3) an infrared absorption spectrum in which the component of wave number 2000 cm-1 is larger than the component of wave number 2100 cm -1 In this case, adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.

    Verfahren zum Herstellen einer Doppelschicht mit Hetero-Übergang für die Speicherelektrode einer Bildaufnahmevorrichtung
    10.
    发明公开
    Verfahren zum Herstellen einer Doppelschicht mit Hetero-Übergang für die Speicherelektrode einer Bildaufnahmevorrichtung 失效
    一种生产用于图像拾取设备的存储器中电极的双异质结层结方法。

    公开(公告)号：EP0031095A2

    公开(公告)日：1981-07-01

    申请号：EP80107832.0

    申请日：1980-12-11

    申请人： Heimann GmbH

    发明人： Heimann, Bernd, Dr., Dipl.-Phys.

    IPC分类号： H01J9/233 ,  H01J29/45

    CPC分类号： H01J29/456 ,  H01J9/233

    摘要： Eine Doppelschicht mit Hetero-Übergang soll Teil einer Speicherelektrode für eine optoelektronische Bildaufnahmevorrichtung sein. Sie entsteht durch Aufdampfen von n-leitendem Cadmiumselenid oder Cadmiumsulfoselenid auf eine- n + -leitende Signalelektrodenschicht aus Zinnoxid. Das aufzudampfende Material wird unter geringem Zusatz von Boroxid-Glas im Vakuum gesintert und kann dann spritzerfrei aufgedampft werden. Der Hetero-Übergang ist nahezu frei von metallischem Cadmium. Anwendung insbesonder bei einem Vidikon-Target.

    摘要翻译： 与异质结甲Doppelschicttt是一个光电图像拾取装置的存储电极的一部分。 它是由n型硒化镉或硫硒化镉的沉积在n引起<+> - 导电氧化锡的信号电极层。 所述材料烧结待蒸发在真空中少量添加氧化硼的玻璃，并且随后可被沉积飞溅。 异质结是几乎不含金属镉。 对于摄像机目标Insbesonder应用。