摘要:
The invention relates to a device for optical pumping radiation emission comprising light emitting means (19) provided with a first resonant cavity having a first input mirror and an output mirror, optical pumping means (21) for emitting a pumping beam of the first cavity, wherein the normal to the input face of the resonant cavity is inclined at an angle υ with respect to the propagation direction of the pumping beam (20), means for forming a second pumping beam resonant cavity, wherein said means comprises a second input mirror forming said second cavity with the output mirror of the first cavity. The inventive device is characterised in that it comprises an optical element transparent to the pumping wavelength between the first and second input mirrors.
摘要:
Bei einer Diodenlaseranordnung (2) mit mehreren in einer ersten Richtung (X) lateral zueinander versetzten Laserbarren (3) sind zumindest einige, vorzugsweise alle Laserbarren (3) entlang eines Bogens angeordnet und ihre Emissionsrichtungen (5, 6) in das Bogeninnere gerichtet. Eine Strahlformungseinheit (1) umfasst mindestens eine solche Diodenlaseranordnung (2) und mindestens eine die Emissionsrichtungen (5, 6) der Laserbarren (3) zu einer Emissionsrichtung (11) zusammenführende Optik (9).
摘要:
The invention relates to a semiconductor optical pumping device for radiation emission comprising a semiconductor body which is provided with at least one pumping radiation source (20) and a quantum pit surface emitting structure (11). Said pumping radiation source (20) and quantum pit structure (11) are monolithically integrated. The pumping radiation source (20) produces pumping radiation (2) which is used for the optical pumping of the quantum pit structure (11). A cavity for injecting the pumping radiation (2) into a quantum pit structure (9) is formed in the semiconductor body between the pumping radiation source (20) and the quantum pit structure (11). The method for producing the inventive device is also disclosed.
摘要:
The invention relates to an optically pumped semiconductor laser device comprising a vertical emitter (1) that is provided with a central waveguide (3) and a quantum well structure which is disposed inside said central waveguide (3) and encompasses at least one quantum layer (5), and a pump radiation source which optically pumps the quantum well structure and comprises at least one pump waveguide (9) within which the pump radiation (11) is directed. The width (A) of the central waveguide (3) is greater than the width (B) of the pump waveguide (B). The width (A) of the central waveguide (3) and the width (B) of the pump waveguide (9) are adapted to each other in such a way that the quantum well structure of the vertical emitter (1) is pumped in a uniform manner.
摘要:
An optically pumped monolithic VCSEL (vertical cavity surface emitting laser) architecture is disclosed. The laser structure comprises at least one signal VCSEL, at least one pump laser, and transition regions between the signal VCSELs and the pump lasers. The signal VCSEL is laterally optically pumped by the pump laser, which can be electrically or optically pumped. The signal VCSEL, the pump laser and the transition region all are monolithically integrated onto a common substrate. The signal VCSEL can be disposed outside or inside the pump laser cavity (extra-cavity or intra-cavity pumping). The cavity of the pump laser can takes various forms, such as a concave cavity, a confocal cavity, or a cylindrical or ellipsoidal form of cavity. Several signal VCSEL can be disposed in the focus or focal area of the cavity of the pump laser
摘要:
The invention relates to an optically pumped surface-emitting semiconductor laser device comprising at least one radiation-generating quantum pot-type structure (11) and at least one pumping radiation source for optically pumping the quantum pot-type structure (11). The pumping radiation source has an edge-emitting semiconductor structure (30) and this edge-emitting semiconductor structure (30), and the quantum pot-type structure (11) are epitaxially applied to a common substrate (1). The edge-emitting semiconductor structure (30) of the pumping radiation source is provided in the form of a semiconductor ring laser.
摘要:
In a light source comprising a plurality of laser diode modules (10), high optical power is output, wherein these laser diode modules (10) are arranged in high density. The light source is arranged by employing a plurality of laser diode modules (10), the optical power of which is higher than, or equal to 300 mW.
摘要:
In a light source comprising a plurality of laser diode modules (10), high optical power is output, wherein these laser diode modules (10) are arranged in high density. The light source is arranged by employing a plurality of laser diode modules (10), the optical power of which is higher than, or equal to 300 mW.
摘要:
An optically pumped monolithic VCSEL (vertical cavity surface emitting laser) architecture is disclosed. The laser structure comprises at least one signal VCSEL, at least one pump laser, and transition regions between the signal VCSELs and the pump lasers. The signal VCSEL is laterally optically pumped by the pump laser, which can be electrically or optically pumped. The signal VCSEL, the pump laser and the transition region all are monolithically integrated onto a common substrate. The signal VCSEL can be disposed outside or inside the pump laser cavity (extra-cavity or intra-cavity pumping). The cavity of the pump laser can takes various forms, such as a concave cavity, a confocal cavity, or a cylindrical or ellipsoidal form of cavity. Several signal VCSEL can be disposed in the focus or focal area of the cavity of the pump laser