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    VERTICAL OUTPUT COUPLERS FOR PHOTONIC DEVICES
    5.
    发明公开
    VERTICAL OUTPUT COUPLERS FOR PHOTONIC DEVICES 审中-公开

    公开(公告)号：EP3286587A1

    公开(公告)日：2018-02-28

    申请号：EP16783759

    申请日：2016-04-20

    申请人： SKORPIOS TECH INC

    发明人： LAMBERT DAMIEN

    IPC分类号： G02B6/14 ,  G02B6/122 ,  G02B6/136

    CPC分类号： G02B6/125 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12169

    摘要： A method forms a vertical output coupler for a waveguide that propagates light along a horizontal propagation direction, through a waveguide material that overlies a buried oxide layer. The method includes etching the waveguide to remove a portion of the waveguide. The etching forms at least a first plane that is at an edge of the waveguide, is adjacent to the removed portion of the waveguide, and is tilted at a vertical angle between 20 degrees and 70 degrees with respect to the propagation direction. The method further includes coating the first tilted plane with a reflective metal to form a mirror, such that the mirror reflects the light into a direction having a vertical component.

    OPTICAL BEAM SCANNER
    7.
    发明公开
    OPTICAL BEAM SCANNER 有权
    光束扫描仪

    公开(公告)号：EP3207413A1

    公开(公告)日：2017-08-23

    申请号：EP15780902.1

    申请日：2015-10-15

    申请人： Medlumics S.L.

    发明人： MARGALLO BALBÁS, Eduardo ,  RUBIO GIVERNAU, José Luis ,  ZINOVIEV, Kirill

    IPC分类号： G02B6/42 ,  G02B26/10

    CPC分类号： G02B26/103 ,  G02B1/11 ,  G02B6/12004 ,  G02B6/136 ,  G02B6/4214 ,  G02B26/0833 ,  G02B26/105 ,  G02B2006/12061 ,  G02B2006/12102 ,  G02B2006/12104

    摘要： A scanning device is presented having a substrate with a first surface and an opposite, parallel second surface. A region of the substrate includes the first surface and the opposite parallel second surface, and is defined via an etching process through a thickness of the substrate, where the region remains attached to the substrate via one or more hinges. A waveguide is patterned over the first surface of the region and guides a beam of radiation along a length of the waveguide. The scanning device includes a facet located on the first surface of the region. The facet is designed to reflect at least a portion of the beam of radiation through the region. An optical element is located on the second surface of the region, and is designed to receive the reflected portion of the beam of radiation.

    摘要翻译： 提出了一种扫描装置，其具有带有第一表面和相对的平行第二表面的衬底。 衬底的区域包括第一表面和相对的平行的第二表面，并且通过蚀刻工艺穿过衬底的厚度限定，其中该区域通过一个或多个铰链保持附着到衬底。 波导在该区域的第一表面上形成图案并沿着波导的长度引导辐射束。 扫描装置包括位于该区域的第一表面上的小平面。 该面被设计成反射穿过该区域的至少一部分辐射束。 光学元件位于该区域的第二表面上，并被设计为接收辐射束的反射部分。

    INTEGRATED PHOTONIC WAVEGUIDE GRATING COUPLER
    10.
    发明公开
    INTEGRATED PHOTONIC WAVEGUIDE GRATING COUPLER 审中-公开
    集成光子波导光栅耦合器

    公开(公告)号：EP2887109A1

    公开(公告)日：2015-06-24

    申请号：EP14198450.0

    申请日：2014-12-17

    申请人： IMEC VZW

    发明人： Van Campenhout, Joris ,  Absil, Philippe ,  Verheyen, Peter

    IPC分类号： G02B6/124 ,  G02B6/12

    CPC分类号： G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

    摘要： A semiconductor photonics device (100) for coupling radiation to a semiconductor waveguide (130) is described. The photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate (110), a buried oxide layer (120) positioned on top of the semiconductor substrate (110) and the semiconductor waveguide (130) on top of the buried oxide layer to which radiation is to be coupled. The device (100) also comprises a grating coupler (140) positioned on top of the buried oxide layer (120) and configured for coupling incident radiation to the semiconductor waveguide (130). The semiconductor substrate (110) has a recessed portion (110) at the backside of the semiconductor substrate (110) for receiving incident radiation to be coupled to the semiconductor waveguide (130) via the backside of the semiconductor substrate (110) and the grating coupler (140).

    摘要翻译： 描述了用于将辐射耦合到半导体波导（130）的半导体光子学装置（100）。 所述光子器件包括绝缘体上半导体衬底，所述绝缘体上半导体衬底包括半导体衬底（110），位于所述半导体衬底（110）顶部上的掩埋氧化物层（120）和位于所述掩埋氧化物层（110）顶部上的所述半导体波导 辐射要与之耦合。 器件（100）还包括位于掩埋氧化物层（120）顶部并配置用于将入射辐射耦合到半导体波导（130）的光栅耦合器（140）。 半导体衬底（110）在半导体衬底（110）的背面具有用于接收要经由半导体衬底（110）的背面和半导体衬底（110）的背面耦合到半导体波导（130）的入射辐射的凹部（110） 耦合器（140）。