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    Ring cavity type surface emitting semiconductor laser and fabrication method thereof
    3.
    发明公开
    Ring cavity type surface emitting semiconductor laser and fabrication method thereof 失效
    OberflächenemittierenderHalbleiterlaser mitringförmigenKavitätund Herstellungsverfahren

    公开(公告)号：EP0874425A3

    公开(公告)日：2004-01-21

    申请号：EP98107571.6

    申请日：1998-04-24

    申请人： CANON KABUSHIKI KAISHA

    发明人： Furukawa, Yukio, c/o Canon K.K.

    IPC分类号： H01S5/10 ,  H01S5/183 ,  H01S5/18

    CPC分类号： H01S5/18352 ,  H01S5/0207 ,  H01S5/02476 ,  H01S5/1071 ,  H01S5/18305 ,  H01S5/18316 ,  H01S5/3202 ,  H01S5/32391 ,  H01S2301/176

    摘要： A surface emitting semiconductor laser of a ring cavity type with a small cavity loss includes a ring cavity or resonator which is constructed wituout using at least one of a pair of special high-reflection multi-layer mirrors and formed in a plane approximately perpendicular to its substrate. The ring cavity is built by a parallel face parallel to the substrate and at least one total reflection face formed opposed to the parallel face. The total reflection face may be a mesa-shaped semiconductor face, a polygonal cone-shaped semiconductor face, a quadrangular cone-shaped semiconductor, a circular cone-shaped semiconductor face or the like.

    摘要翻译： 具有小腔体损耗的环腔型的表面发射半导体激光器包括环形腔或谐振器，其不使用一对特殊的高反射多层反射镜中的至少一个并且在大致垂直于其的平面中形成 基质。 环形空腔由平行于基板的平行面和与平行面相对形成的至少一个全反射面构成。 全反射面可以是台面状半导体面，多边形锥形半导体面，四边形锥形半导体，圆锥形半导体面等。

    Vertical-cavity surface-emitting lasers with intra-cavity structures
    4.
    发明公开
    Vertical-cavity surface-emitting lasers with intra-cavity structures 失效
    激光镭射激光器

    公开(公告)号：EP0898347A1

    公开(公告)日：1999-02-24

    申请号：EP98115197.0

    申请日：1993-05-06

    申请人： Photonics Research Inc.

    发明人： Jewell,Jack L. ,  Olbright,Gregory E.

    IPC分类号： H01S3/19 ,  H01S3/085 ,  H01S3/025

    CPC分类号： H01S5/18308 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2224 ,  H01S2301/166

    摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM oo mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper and a lower mirror. The laser cavity comprises upper and lower spacer layers sandwiching an active region. A stratified electrode for conducting electrical current to the active region is disposed between the upper mirror and the upper spacer. The stratified electrode comprises a plurality of alternating high and low doped layers for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding regions. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.

    摘要翻译： 公开了具有各种腔内结构以实现低串联电阻，高功率效率和TEMoo模式辐射的垂直腔表面发射激光器（VCSEL）。 在本发明的一个实施例中，VCSEL包括设置在上反射镜和下反射镜之间的激光腔。 激光腔包括夹持有源区的上间隔层和下间隔层。 用于将电流传导到有源区的分层电极设置在上反射镜和上间隔件之间。 分层电极包括多个交替的高和低掺杂层，用于实现低串联电阻而不增加光吸收。 VCSEL还包括作为形成在分层电极中的用于抑制更高模式辐射的盘形区域的电流孔径。 通过减小或消除环形周围区域的导电性来形成电流孔径。 在另一个实施例中，在VCSEL的上反射镜内形成具有光学孔的金属接触层。 光学孔径以这样的方式阻挡光场，从而消除较高的横模激光。

    VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES
    5.
    发明公开
    VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES 失效
    表面发射激光器VERTICAL谐振器的内部结构。

    公开(公告)号：EP0663112A1

    公开(公告)日：1995-07-19

    申请号：EP93911113.0

    申请日：1993-05-06

    申请人： BANDGAP TECHNOLOGY CORPORATION

    发明人： JEWELL, Jack, L. ,  OLBRIGHT, Gregory, R.

    IPC分类号： H01S5

    CPC分类号： H01S5/18308 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2224 ,  H01S2301/166

    摘要： Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the conductivity of the annular surrounding region. In another embodiment, a metal contact layer having an optical aperture is formed within the upper mirror of the VCSEL. The optical aperture blocks the optical field in such a manner that it eliminates higher transverse mode lasing.

    THERMAL-RADIATION LIGHT SOURCE AND TWO-DIMENSIONAL PHOTONIC CRYSTAL USED THEREIN
    6.
    发明公开
    THERMAL-RADIATION LIGHT SOURCE AND TWO-DIMENSIONAL PHOTONIC CRYSTAL USED THEREIN 审中-公开
    德国维多利亚州威尔士革命者光子学家克里斯托尔（WISRMESTRAHLUNGSLICHTQUELLE UND DARIN VERWENDETER ZWEIDIMENSIONALER PHOTONISCHER KRISTALL

    公开(公告)号：EP3113304A4

    公开(公告)日：2017-03-15

    申请号：EP15754718

    申请日：2015-02-24

    申请人： JAPAN SCIENCE & TECH AGENCY

    发明人： NODA SUSUMU ,  INOUE TAKUYA ,  ASANO TAKASHI ,  DE ZOYSA MENAKA

    IPC分类号： H01S5/04 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/18 ,  H01S5/30 ,  H01S5/34

    CPC分类号： H01S5/18319 ,  H01S5/0014 ,  H01S5/0207 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/105 ,  H01S5/18316 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3402 ,  H01S5/3419 ,  H01S2302/02

    摘要： The present invention provides a thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source 10 includes: a two-dimensional photonic crystal 12 including a slab 11 in which an n-layer 112 made of an n-type semiconductor, a quantum well structure layer 114 having a quantum well structure, and a p-layer 111 made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes 121) whose refractive index differs from the refractive indices of the n-layer 112, the p-layer 111 and the quantum well structure layer 114 are cyclically arranged in the slab 11 so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer 114; and a p-type electrode 131 and an n-type electrode 132 for applying, to the slab 11, a voltage which is negative on the side of the p-layer 111 and positive on the side of the n-layer 112.

    摘要翻译： 本发明提供一种与光电转换元件类似的能够以高响应速度切换光强度的热发射源。 热发射源10包括：二维光子晶体12，其包括其中由n型半导体制成的n层112，具有量子阱结构的量子阱结构层114和p层 在厚度方向上按顺序堆叠由p型半导体制成的111，其中折射率不同于n层112，p层111和p层111的折射率的改性折射率区域（空气孔121） 量子阱结构层114循环地布置在板坯11中，以便与量子阱结构层114中的量子阱中的子带之间的转变能相对应的特定波长的光共振; 以及p型电极131和n型电极132，用于向板坯11施加在p层111侧为正的电压，在n层112的一侧为正。