公开(公告)号：EP4254691A1

公开(公告)日：2023-10-04

申请号：EP23162957.7

申请日：2023-03-20

申请人： ASAHI-SEIKI MANUFACTURING CO., LTD.

发明人： OBAYASHI, Eiji ,  NOJIMA, Takashi ,  FUKATSU, Ryota

IPC分类号： H02G1/12

摘要： A wire coating removal device (10, 10A) of any one of the present embodiments includes: a wire feed path (R) through which a wire (90) is fed in a state of being linearly extended; a pair of rotary tools (31) that sandwich the wire (90) from a first direction at a first position on the wire feed path (R) and cut off a coating (90B); and a pair of rotary tools (32) that sandwich the wire (90) from a second direction intersecting the first direction, at a second position on the wire feed path (R) and cut off the coating (90B).

公开(公告)号：EP4250371A1

公开(公告)日：2023-09-27

申请号：EP22194298.0

申请日：2022-09-07

申请人： Toshiba Electronic Devices & Storage Corporation ,  KABUSHIKI KAISHA TOSHIBA

发明人： ASABA, Shunsuke ,  KONO, Hiroshi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16

摘要： A semiconductor device includes: a first conductive type first silicon carbide region including a first region, a second region and a third region both on the first region, the second region having impurity concentration equal to or higher than the first region, and the third region having impurity concentration higher than the second region; a second conductive type second silicon carbide region on the first silicon carbide region, the second silicon carbide region including a fourth region in contact with the second region and a fifth region in contact with the third region, and the fifth region having impurity concentration higher than the fourth region; a third silicon carbide region of a first conductive type on the second silicon carbide region; a first gate electrode; a first electrode having a first portion in contact with the second silicon carbide region and the third silicon carbide region; and a second electrode.

公开(公告)号：EP4250366A1

公开(公告)日：2023-09-27

申请号：EP22194506.6

申请日：2022-09-08

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： KONO, Hiroshi ,  TANAKA, Katsuhisa

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/78

摘要： A semiconductor device of an embodiment includes a trench in a silicon carbide layer and extending in a first direction, a gate electrode in the trench, first, second, third and fourth silicon carbide regions disposed in the silicon carbide layer in the first direction in this order, first and third silicon carbide regions having first conductive type, second and fourth silicon carbide regions having second conductive type, fifth, sixth, seventh and eighth silicon carbide regions disposed in the silicon carbide layer in the first direction in this order above the first to fourth silicon carbide regions, fifth and seventh silicon carbide regions having first conductive type higher than first and third silicon carbide regions, sixth and eighth silicon carbide regions having second conductive type higher than second and fourth silicon carbide regions, a ninth silicon carbide region of a first conductive type above the fifth to eighth silicon carbide regions.

公开(公告)号：EP4246596A1

公开(公告)日：2023-09-20

申请号：EP22193810.3

申请日：2022-09-05

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： ITOKAZU, Hiroko ,  MATSUDAI, Tomoko ,  IWAKAJI, Yoko ,  KAWAMURA, Keiko ,  FUSE, Kaori

IPC分类号： H01L29/861 ,  H01L29/739 ,  H01L29/06 ,  H01L29/40

摘要： A semiconductor device (1-7a) includes a semiconductor part (10), first and second electrodes (20, 30), and first-third and second-third electrodes (40a, 40b). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The semiconductor part (10) includes a first semiconductor layer (11) of a first conductivity type, second and third semiconductor layers (13, 15) of a second conductivity type. The second and third semiconductor layers (13, 15) are arranged between the first semiconductor layer (11) and the second electrode (30). The first-third and second-third electrodes (40a, 40b) are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode (40a) and the second-third electrode (40b). The second electrode (30) includes a contact portion (30c) extending into the second semiconductor layer (13). The third semiconductor layer (15) is provided on the second semiconductor layer (13) between the contact portion (30c) and the second-third electrode (40b). The second semiconductor layer (13) includes a first portion (13a) facing the third semiconductor layer (15) via the contact portion (30c).

公开(公告)号：EP4246586A1

公开(公告)日：2023-09-20

申请号：EP22190531.8

申请日：2022-08-16

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： ASABA, Shunsuke ,  TANAKA, Katsuhisa ,  KONO, Hiroshi

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/78

摘要： A semiconductor device (1, 2, 3) includes first, second and control electrodes (20, 30, 40), and a semiconductor part (10) between the first and second electrode (20, 30). The semiconductor part (10) includes first and third layers (11, 15) of a first conductive type, and second, fourth and fifth layers (13, 17, 19) of a second conductive type. The first layer (11) extends between the first and second electrodes (20, 30). The second layer (13) is provided between the first layer (11) and the second electrode (30). The third layer (15) is partially provided on the second layer (13) between the second layer (13) and the second electrode (30). A first fourth layer (17) and a second fourth layer (17) are provided in the first layer (11). The fifth layer (19) is provided between the first layer (11) and the second layer (13). The fifth layer (19) is partially provided on the first layer (11) between the first fourth layer (17) and the second fourth layer (17). The control electrode (40) is provided between the second electrode (30) and each of the fourth layers (17).

公开(公告)号：EP4245584A1

公开(公告)日：2023-09-20

申请号：EP21906652.9

申请日：2021-12-15

申请人： AISIN CORPORATION

发明人： INOUE, Ryohei ,  KONDO, Shinji

IPC分类号： B60K1/00 ,  F16H1/06 ,  H02K7/116

摘要： A case (1) includes: a case body (11) forming a first housing chamber (5) housing a rotating electrical machine (MG) and gears (G) and a second housing chamber (3) housing an inverter device (INV); and a cover member (12). The cover member (12) is joined to an axial second side (L2) of the case body (11), and disposed to cover the axial second side (L2) of the first housing chamber (5). The case body (11) includes a partition wall (70) separating the first housing chamber (5) and the second housing chamber (3), a peripheral wall (61) covering the first housing chamber (5) from outside in a radial direction (R), and an axial wall (62) covering an axial first side (L1) of the second housing chamber (5). The partition wall (70), the peripheral wall (61), and the axial wall (62) are integrally formed.

公开(公告)号：EP3494553B1

公开(公告)日：2023-09-20

申请号：EP17791447.0

申请日：2017-08-07

发明人： EINBERG, Fredrik ,  HOYER, Philip ,  LOVELOCK, Julian ,  ROWE, Robert

IPC分类号： G07C9/00 ,  G06V40/16 ,  G07C9/25 ,  G07C9/27

公开(公告)号：EP4243085A1

公开(公告)日：2023-09-13

申请号：EP22192068.9

申请日：2022-08-25

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： ICHINOSEKI, Kentaro ,  KAWAMURA, Keiko

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/41

摘要： A semiconductor device (1, 2) includes a semiconductor part (10), first to third electrodes (20, 30, 40), a control electrode (50) and first to third insulating films (43, 53, 45). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The third electrode (40) extends in a first direction (Z) inside a trench (GT) of the semiconductor part (10). The control electrode (50) is provided inside the trench (GT) at an opening side thereof. The control electrode (50) includes first and second control portions (50a, 50b) arranged in a second direction (X) crossing the first direction (Z). The third electrode (40) has an end portion (40e) between the first and second control portions (50a, 50b). The first insulating film (43) is provided between the semiconductor part (10) and the third electrode (40). The second insulating film (53) is provided between the semiconductor part (10) and the control electrode (50). The third insulating film (45) covers the end portion (40e) of the third electrode (40). The first insulating film (43) includes an extending portion (43e) extending between the third insulating film (45) and the control electrode (50).

公开(公告)号：EP3772224B1

公开(公告)日：2023-08-30

申请号：EP20185055.9

申请日：2020-07-09

发明人： HASHIMOTO, Takeshi ,  FUJITA, Yasuhiro

IPC分类号： H04R3/04 ,  B06B1/02 ,  H04R5/02

公开(公告)号：EP4231508A1

公开(公告)日：2023-08-23

申请号：EP22752837.9

申请日：2022-02-10

申请人： AISIN CORPORATION

发明人： SATO, Ryota ,  HOTTA, Yutaka ,  MIZUNO, Yuya ,  MURAKAMI, Satoshi ,  FUKUDA, Keita ,  IHARA, Hirosato

IPC分类号： H02K5/22 ,  H02K9/19 ,  H02K11/30

摘要： An Inverter-integrated rotating electrical machine includes: a rotating electrical machine including a rotor and a stator; a housing member forming a housing chamber that houses the rotating electrical machine; a cover member that covers an opening on one end side of the housing member in an axial direction and that includes a support portion rotatably supporting the rotor; a power switching element located between the cover member and the rotating electrical machine in the axial direction; and a smoothing capacitor located between the cover member and the rotating electrical machine in the axial direction. The cover member includes a cooler that cools the power switching element and the smoothing capacitor. The power switching element and the smoothing capacitor are connected to the cover member in a thermally conductive manner.