-
公开(公告)号：EP4060747A3
公开(公告)日：2022-11-16
申请号：EP22158411.3
申请日：2022-02-24
发明人： YASUHARA, Norio , IWAKAJI, Yoko , KAWAGUCHI, Yusuke , YOSHIKAWA, Daiki , MATSUSHITA, Kenichi , HANAGATA, Shoko , MATSUDAI, Tomoko , ITOKAZU, Hiroko , KAWAMURA, Keiko
IPC分类号： H01L29/739 , H01L29/40 , H01L29/06 , H01L29/423 , H01L29/10
摘要： This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.
-
公开(公告)号：EP4343853A1
公开(公告)日：2024-03-27
申请号：EP23157662.0
申请日：2023-02-21
IPC分类号： H01L29/739 , H01L29/06 , H01L29/40 , H01L21/331
摘要： A semiconductor device includes an n-type semiconductor substrate (10), a cell region (20), and a termination region (30). The termination region surrounds the cell region and includes a plurality of first p-type diffusion layers (301-303) at the front face of the semiconductor substrate containing a first conductive impurity (p), a plurality of second p-type diffusion layers (311-313) each disposed on an outer side of each of the plurality of first p-type diffusion layers and having a concentration of the first conductive impurity (p) lower than that of the p-type first diffusion layers, and a plurality of conductive layers (321), functioning as field plates, above the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate. The plurality of conductive layers electrically being connected to the first diffusion layers, the plurality of conductive layers each having an outer edge (321a), said outer edge disposed above the second diffusion layer adjacent the first diffusion layer contacting the respective field plate. The termination region may comprise a plurality of vertically stacked conductive regions (321, 322) separated by a dielectric (40).
-
公开(公告)号：EP4343856A1
公开(公告)日：2024-03-27
申请号：EP23154453.7
申请日：2023-02-01
IPC分类号： H01L29/78 , H01L29/423 , H01L21/336
摘要： A semiconductor device (1, 2) includes a semiconductor part (10), first to third and control electrodes (20, 30, 50, 40). The first electrode (20) is provided on a back surface (10B) of the semiconductor part (10); and the second electrode (30) is provided on a front surface (10F) thereof. The third electrode (50) is provided between the first and second electrodes (20, 30). The third electrode (50) extends into the semiconductor part (10) from the front surface side (10F) thereof. The third electrode (50) is electrically insulated from the semiconductor part (10) via an insulating space (IS) between the semiconductor part (10) and the third electrode (50). The control electrode includes first and second portions (40A, 40B). The first portion (40A) is linked to the second portion (40B) and extends between the semiconductor part (10) and the third electrode (50). The second portion (40B) is provided between the second electrode (30) and the third electrode (50). The first portion (40A) faces the insulating space (IS) via the third electrode (50); and the second portion (40B) extends between the insulating space (IS) and the second electrode (30).
-
公开(公告)号：EP4060747A2
公开(公告)日：2022-09-21
申请号：EP22158411.3
申请日：2022-02-24
发明人： YASUHARA, Norio , IWAKAJI, Yoko , KAWAGUCHI, Yusuke , YOSHIKAWA, Daiki , MATSUSHITA, Kenichi , HANAGATA, Shoko , MATSUDAI, Tomoko , ITOKAZU, Hiroko , KAWAMURA, Keiko
IPC分类号： H01L29/739 , H01L29/40 , H01L29/06
摘要： This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.
-
公开(公告)号：EP4246596A1
公开(公告)日：2023-09-20
申请号：EP22193810.3
申请日：2022-09-05
IPC分类号： H01L29/861 , H01L29/739 , H01L29/06 , H01L29/40
摘要： A semiconductor device (1-7a) includes a semiconductor part (10), first and second electrodes (20, 30), and first-third and second-third electrodes (40a, 40b). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The semiconductor part (10) includes a first semiconductor layer (11) of a first conductivity type, second and third semiconductor layers (13, 15) of a second conductivity type. The second and third semiconductor layers (13, 15) are arranged between the first semiconductor layer (11) and the second electrode (30). The first-third and second-third electrodes (40a, 40b) are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode (40a) and the second-third electrode (40b). The second electrode (30) includes a contact portion (30c) extending into the second semiconductor layer (13). The third semiconductor layer (15) is provided on the second semiconductor layer (13) between the contact portion (30c) and the second-third electrode (40b). The second semiconductor layer (13) includes a first portion (13a) facing the third semiconductor layer (15) via the contact portion (30c).
-
公开(公告)号：EP4243085A1
公开(公告)日：2023-09-13
申请号：EP22192068.9
申请日：2022-08-25
IPC分类号： H01L29/78 , H01L29/423 , H01L29/41
摘要： A semiconductor device (1, 2) includes a semiconductor part (10), first to third electrodes (20, 30, 40), a control electrode (50) and first to third insulating films (43, 53, 45). The semiconductor part (10) is provided between the first and second electrodes (20, 30). The third electrode (40) extends in a first direction (Z) inside a trench (GT) of the semiconductor part (10). The control electrode (50) is provided inside the trench (GT) at an opening side thereof. The control electrode (50) includes first and second control portions (50a, 50b) arranged in a second direction (X) crossing the first direction (Z). The third electrode (40) has an end portion (40e) between the first and second control portions (50a, 50b). The first insulating film (43) is provided between the semiconductor part (10) and the third electrode (40). The second insulating film (53) is provided between the semiconductor part (10) and the control electrode (50). The third insulating film (45) covers the end portion (40e) of the third electrode (40). The first insulating film (43) includes an extending portion (43e) extending between the third insulating film (45) and the control electrode (50).
-
公开(公告)号：EP4064365A3
公开(公告)日：2022-10-19
申请号：EP22158409.7
申请日：2022-02-24
IPC分类号： H01L29/739 , H01L29/06 , H01L29/423 , H01L29/417
摘要： A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.
-
公开(公告)号：EP4343855A1
公开(公告)日：2024-03-27
申请号：EP23159217.1
申请日：2023-02-28
发明人： ITOKAZU, Hiroko , IWAKAJI, Yoko , KAWAMURA, Keiko , MATSUDAI, Tomoko , FUSE, Kaori , MOTAI, Takako
IPC分类号： H01L29/739 , H01L29/40 , H01L29/66 , H01L29/423 , H01L29/10 , H01L29/06
摘要： A semiconductor device (1 to 5, 8a, 8b, 9a, 9b) includes a semiconductor part (10), first to fourth electrodes (20, 30, 50, 60) and a control electrode (40). The first and second electrodes (20. 30) are provided respectively on back and front surfaces (10B, 10F) of the semiconductor part (10). The third electrode (50) is provided between the first and second electrodes (20, 30), and provided in the semiconductor part (10) with a first insulating film (21) interposed. The fourth and control electrodes (60, 40) are provided between the second and third electrodes (30, 50). The fourth and control electrodes (60, 40) extends into the semiconductor part (10) from the front side (10F) and faces the third electrode (50) with a second insulating film (23) interposed. The fourth electrode (60) is positioned between the semiconductor part (10) and the control electrode (40). The first insulating film (21) extends between the semiconductor part (10) and the control electrode (40) and between the semiconductor part (10) and the fourth electrode (60). The fourth electrode (60) faces the control electrode (40) with a third insulating film (25) interposed, and is electrically connected to the third electrode (50).
-
公开(公告)号：EP4343854A1
公开(公告)日：2024-03-27
申请号：EP23157663.8
申请日：2023-02-21
发明人： MOTAI, Takako , IWAKAJI, Yoko , FUSE, Kaori , ITOKAZU, Hiroko , KAWAMURA, Keiko
IPC分类号： H01L29/739 , H01L21/331 , H01L29/40 , H01L29/06
摘要： A semiconductor device according to an embodiment includes a semiconductor substrate (10), a cell region (20), and a termination region (30). The termination region surrounds the cell region and includes a plurality of first diffusion layers (310) containing a first conductivity type impurity of a conductivity type opposite to that of the substrate. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers (310) includes a first region (311) extending in the first direction from the first face toward a second face of the semiconductor substrate, and a buried second region (312) extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region. Furthermore, field plates (321, 322) may be connected to the first diffusion layers (310).
-
公开(公告)号：EP4336566A1
公开(公告)日：2024-03-13
申请号：EP23152380.4
申请日：2023-01-19
发明人： IWAKAJI, Yoko , KAWAMURA, Keiko , GEJO, Ryohei , FUSE, Kaori
IPC分类号： H01L29/861 , H01L29/739 , H01L29/417 , H01L29/06 , H01L29/40 , H01L21/331 , H01L21/329
摘要： A vertical trench-gate IGBT (10B) with integral FWD (10A) is described. According to one embodiment, the FWD part (10A) includes first (51) and second (52) main electrodes, a first conductive member (61) serving as a trench field plate, a semiconductor member, and an insulating member (41). The first electrode includes a first face. The second electrode includes a first conductive region and a first conductive portion (52a), which is recessed in the anode region of the diode. The first conductive portion is electrically connected to the first conductive region. The first conductive member (61) is provided between the first face and the first conductive region. The semiconductor member is provided between the first face and the second electrode. The semiconductor member includes a first semiconductor (drift) region (11) of a first conductive type, a second semiconductor (anode) region (12) of a second conductive type, a third semiconductor (contact) region (13) of the second conductive type, a fourth semiconductor region (14) of the first conductive type, and a fifth semiconductor region (15) of the first conductive type, located at the bottom end of the recessed anode electrode (52a).
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.015 秒)
