COMPOSITION FOR LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER AND METHOD OF FORMING LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER
    61.
    发明公开
    COMPOSITION FOR LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER AND METHOD OF FORMING LAYERED TRANSITION METAL CHALCOGENIDE COMPOUND LAYER 审中-公开
    用于分层过渡金属硫族化合物层的组合物和形成分层过渡金属硫族化合物层的方法

    公开(公告)号:EP3085810A1

    公开(公告)日:2016-10-26

    申请号:EP16166676.3

    申请日:2016-04-22

    IPC分类号: C23C16/30 H01L21/02

    摘要: Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2.

            [Formula 1]     M a (R 1 ) 6-b-c (H) b (R 2 ) c

    wherein, in Formula 1, M, R 1 , R 2 , a, b, and c are the same as defined in the detailed description, and

            [Formula 2]     M' k X 2

    wherein, in Formula 2, M' and X are the same as defined in the detailed description.

    摘要翻译: 本发明提供用于形成层状过渡金属硫族化合物层的组合物以及使用该组合物形成层状过渡金属硫族化合物层的方法。 所述组合物包含由式1表示的过渡金属前体和由式2表示的硫族化物前体。[式1]其中,在式1中,M,R 1,R 2 a,b和c与详细描述中定义的相同,并且[式2] M'kX 2其中,在式2中,M'和X与详细描述中定义的相同。