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    PELLICLES FOR PHOTOMASKS, RETICLES INCLUDING THE PHOTOMASKS, AND METHODS OF MANUFACTURING THE PELLICLES
    1.
    发明公开
    PELLICLES FOR PHOTOMASKS, RETICLES INCLUDING THE PHOTOMASKS, AND METHODS OF MANUFACTURING THE PELLICLES 审中-公开

    公开(公告)号：EP3438745A1

    公开(公告)日：2019-02-06

    申请号：EP18183212.2

    申请日：2018-07-12

    申请人： Samsung Electronics Co., Ltd.

    发明人： LEE, Minhyun ,  SHIN, Hyeonjin ,  JEONG, Seongjun ,  PARK, Seongjun

    IPC分类号： G03F1/62 ,  G03F1/64

    摘要： A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

    MULTILAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND DEVICE INCLUDING THE MULTILAYER STRUCTURE
    2.
    发明公开
    MULTILAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND DEVICE INCLUDING THE MULTILAYER STRUCTURE 审中-公开
    与扩散阻挡层和设备符合这种多层结构的多层结构

    公开(公告)号：EP3125291A1

    公开(公告)日：2017-02-01

    申请号：EP16176425.3

    申请日：2016-06-27

    申请人： Samsung Electronics Co., Ltd.

    发明人： SONG, Hyunjae ,  NAM, Seunggeol ,  PARK, Seongjun ,  SHIN, Keunwook ,  SHIN, Hyeonjin ,  LEE, Jaeho ,  LEE, Changseok ,  CHO, Yeonchoo

    IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/485

    CPC分类号： H01L21/76846 ,  H01L21/28525 ,  H01L21/28568 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L29/45

    摘要： A multilayer structure includes a first material layer (L10), a second material layer (L20), and a diffusion barrier layer (B10). The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

    摘要翻译： 一种多层结构，包括第一材料层（L10），第二材料层（L20），和扩散阻挡层（B10）。 第二材料层被连接到所述第一材料层。 所述第二材料层是由第一材料层隔开。 扩散阻挡层位于所述第一材料层和第二材料层之间。 扩散阻挡层可以包括一个二维（2D）的材料。 二维材料可以是基于非石墨烯材料，颜色：如具有二维晶体结构的基于硫族化物的金属材料。 第一材料层可以是半导体或绝缘体上，并且所述第二材料层可以是导体。 至少所述多层结构的一部分可以在电子设备上构成为互连。

    THERMOELECTRIC STRUCTURE, THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明公开
    THERMOELECTRIC STRUCTURE, THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    热电材料，热电材料VERFAHREN ZUR HERSTELLUNG DAVON

    公开(公告)号：EP3151292A1

    公开(公告)日：2017-04-05

    申请号：EP16188699.9

    申请日：2016-09-14

    申请人： Samsung Electronics Co., Ltd. ,  Research & Business Foundation SungKyunKwan University

    发明人： KIM, Sungwng ,  KIM, Eunsung ,  HWANG, Jaeyeol ,  PARK, Seongjun ,  SHIN, Hyeonjin

    IPC分类号： H01L35/16 ,  H01L35/34

    CPC分类号： H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

    摘要： A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

    摘要翻译： 可以包括在热电装置中的热电结构可以包括可以包括多个薄膜层的薄膜结构。 薄膜结构可以包括碲。 薄膜结构可以在基底上。 衬底可以包括氧化物，并且缓冲层可以在衬底和薄膜结构之间。 热电结构可以通过从靶上烧蚀到衬底上的材料来制造。 一些材料可以与衬底反应以形成缓冲层，并且可以在缓冲层上形成薄膜层。 薄膜层可以从衬底上移除并提供在单独的衬底上。 从衬底去除薄膜层可以包括从缓冲层去除薄膜层。

    TRIBOELECTRIC GENERATOR
    7.
    发明公开
    TRIBOELECTRIC GENERATOR 审中-公开
    TRIBOELEKTRISCHER发电机

    公开(公告)号：EP3086460A3

    公开(公告)日：2017-03-29

    申请号：EP16163889.5

    申请日：2016-04-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： SHIN, Hyeonjin ,  BYUN, Kyungeun ,  SEOL, Minsu ,  PARK, Seongjun

    IPC分类号： H02N1/04

    CPC分类号： H02N1/04

    摘要： A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.

    摘要翻译： 摩擦电发生器包括彼此面对的第一和第二电极以及设置在第一电极上并通过与其它材料接触产生电能的第一能量产生层，第一能量产生层包括具有晶体的二维（2D）材料 2D形状的结构。

    TRIBOELECTRIC GENERATOR
    8.
    发明公开
    TRIBOELECTRIC GENERATOR 审中-公开
    TRIBOELEKTRISCHER发电机

    公开(公告)号：EP3101801A1

    公开(公告)日：2016-12-07

    申请号：EP16171138.7

    申请日：2016-05-24

    申请人： Samsung Electronics Co., Ltd.

    发明人： BYUN, Kyungeun ,  SEOL, Minsu ,  SHIN, Hyeonjin ,  PARK, Seongjun

    IPC分类号： H02N1/04

    CPC分类号： H02N1/04

    摘要： Example embodiments relate to triboelectric generators that include a first electrode and a first triboelectric material layer or a second electrode facing the first electrode, and a first self-assembled monolayer that is combined with, i.e. is on, a surface of the first electrode or a surface of the first triboelectric material layer between the first electrode and the first triboelectric material layer. The first self-assembled monolayer is formed of or include a material that includes a silane group, a silanol group, or a thiol group according to a material to be combined.

    摘要翻译： 示例实施例涉及包括第一电极和第一摩擦电材料层或面对第一电极的第二电极的摩擦电发生器，以及第一自组装单层，其与第一电极的表面结合，即在第一电极的表面上，或 在第一电极和第一摩擦电材料层之间的第一摩擦电材料层的表面。 第一自组装单层由根据待组合的材料形成或包括包括硅烷基，硅烷醇基或硫醇基的材料。

    IMAGE SENSOR FOR HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND LOW DARK CURRENT
    10.
    发明公开
    IMAGE SENSOR FOR HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND LOW DARK CURRENT 审中-公开
    用于高光电转换效率和低暗电流的图像传感器

    公开(公告)号：EP3321974A1

    公开(公告)日：2018-05-16

    申请号：EP17200439.2

    申请日：2017-11-07

    申请人： Samsung Electronics Co., Ltd.

    发明人： JO, Sanghyun ,  LEE, Jaeho ,  LEE, Eunkyu ,  PARK, Seongjun ,  LEE, Kiyoung ,  HEO, Jinseong

    IPC分类号： H01L31/0264 ,  H01L31/074

    摘要： Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

    摘要翻译： 示例实施例涉及被配置为实现高光电转换效率和低暗电流的图像传感器。 图像传感器包括第一和第二电极，设置在第一和第二电极之间的多个光电检测层以及设置在光电检测层之间的中间层。 光检测层将入射光转换成电信号并且包括半导体材料。 中间层包括具有电导率各向异性的金属或半金属材料。