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189 条记录 (耗时 0.014 秒)

    Process and apparatus for irradiating product pallets
    61.
    发明公开
    Process and apparatus for irradiating product pallets 审中-公开
    Verfahren zur Bestrahlung von Produkten auf Paletten

    公开(公告)号：EP1459770A1

    公开(公告)日：2004-09-22

    申请号：EP04447068.0

    申请日：2004-03-18

    申请人： ION BEAM APPLICATIONS S.A.

    发明人： Herer, Arnold S. ,  Stichelbaut, Frédéric

    IPC分类号： A61L2/08 ,  G21K5/08 ,  G21K5/10

    CPC分类号： A61L2/082 ,  A61L2202/24 ,  G21K5/08 ,  G21K5/10

    摘要： The present invention is related to process and an apparatus for irradiating products by means of high energy X-ray beam source (1) in an installation having an irradiation chamber (2), said process comprising the following steps, controlled by controlling means:

    determining the density of the products to be irradiated,
    in order to irradiate said products as a stack predetermining, on the basis of said density, the optimal size of the product stack able to optimize the throughput of the installation and/or the dose uniformity ratio (DUR),
    in the irradiation chamber (2), loading products as a stack onto rotation means (3) located in front of the X-ray beam source (1),
    while rotating the rotation means around a rotation axis (10), irradiating said products from a lateral side of said product stack.

    摘要翻译： 本发明涉及在具有照射室（2）的设备中利用高能X射线束源（1）照射产品的方法和装置，所述方法包括以下步骤：由控制装置控制：确定 要照射的产品的密度，以便根据所述密度将所述产品作为预先确定的所述产品照射能够优化安装产量和/或剂量均匀性比率的产品叠层的最佳尺寸（ DUR），在照射室（2）中，将产品作为堆叠装载到位于X射线束源（1）前方的旋转装置（3）上，同时围绕旋转轴线（10）旋转旋转装置，照射 所述产品从所述产品堆叠的侧面说。

    METHOD AND APPARATUS FOR ELECTRON BEAM FOCUSING ADJUSTMENT IN A SCANNING ELECTRON BEAM COMPUTED TOMOGRAPHY SCANNER
    63.
    发明公开
    METHOD AND APPARATUS FOR ELECTRON BEAM FOCUSING ADJUSTMENT IN A SCANNING ELECTRON BEAM COMPUTED TOMOGRAPHY SCANNER 失效
    方法和装置ELEKTRONENSTRAHLFOKUSIERUNGSREGELUNG INTO计算机辅助断层扫描样本

    公开(公告)号：EP0746869A4

    公开(公告)日：1997-04-09

    申请号：EP95905339

    申请日：1994-12-13

    申请人： IMATRON INC

    发明人： RAND ROY E

    IPC分类号： G01N23/04 ,  A61B6/03 ,  G21K5/02 ,  G21K5/08 ,  H01J35/14 ,  H01J37/12 ,  H01J37/21 ,  H01J35/06

    CPC分类号： H01J35/14 ,  A61B6/032 ,  A61B6/4028

    摘要： In a CT system, the electron beam (12) is focused by controlling the distribution of beam-generated ions electrostatically. The relative lengths of the upstream (self-expanding, de-focusing) beam region and downstream (converging, self-focusing) beam region are controlled such that beam de-focusing in the upstream region compensates for beam self-focusing in the downstream region. Thus, essentially zero external focusing strength is required. Located downstream from the electron gun (32), a positive ion electrode ('PIE') (48) determines the relative length of each region. The PIE is mounted coaxially to the beam optic axis and coupled to a large positive potential. Varying the PIE potential varies the boundary position, and thus the magnitudes of the beam de-focusing and self-focusing effects. Positive ions are removed by a periodic ion clearing electrode ('PICE') (52) whose rate of change of axial potential creates the alternating axial fields that rapidly sweep away the ions.

    MASS LIMITED TARGET.
    65.
    发明公开
    MASS LIMITED TARGET. 失效
    事件性临时。

    公开(公告)号：EP0342208A4

    公开(公告)日：1990-01-08

    申请号：EP88908526

    申请日：1988-08-23

    申请人： HAMPSHIRE INSTR INC

    发明人： FRANKEL ROBERT D ,  DRUMHELLER JERRY

    IPC分类号： G21K5/08 ,  G03F7/20 ,  H01L21/027 ,  H05G1/52 ,  H05G2/00 ,  H05H1/22

    CPC分类号： H05G2/001 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916 ,  G21B1/19 ,  Y02E30/16

    摘要： An improved target (76) for use in an X-ray lithography system has a plurality of small holes (90) fabricated through a base (84) against which the laser beam is focused. A film (86) covers each hole (90) and a thin layer of metal target material (88) is placed on the film (86). The thickness of the metal material (88) is selected to be sufficient to allow the complete ablation of the material during the existence of the laser beam inducing the X-ray emitting plasma. In this manner, a minimal amount of debris will be generated. The angle of the plane of the target (76) relative to the mask plane and the angle of incidence of the laser beam relative to the normal line to the target (76) are selected so that both the X-ray mask and the laser beam optical elements are positioned in an area where few, if any, molten droplets of debris are emitted.