公开(公告)号：EP0101256A2

公开(公告)日：1984-02-22

申请号：EP83304501.6

申请日：1983-08-04

申请人： EDECO HOLDINGS LIMITED

发明人： Matthews, Andrew James ,  Thomas, Simon Andrew

IPC分类号： C09K5/06

CPC分类号： C09K5/063 ,  F28D20/003 ,  F28D20/02 ,  Y02E60/142 ,  Y02E60/145

摘要： A thermal energy storage medium comprising a hydrophilic polysaccharide supporting an inorganic salt that is capable of transforming from one phase to a less hydrated phase absorbing latent heat, and releasing this latent heat upon the reverse transformation. The polysaccharide, preferably Xanthan Gum, may be incorporated in concentrations of 0.05% to 3% together with a nucleating agent in order to form a material that transforms when cooled back to the transformation temperature, or in greater concentrations of 1% to 5% without a nucleating agent to form a material that may be cooled below the transformation temperature without transformation taking place, and stored at ambient temperature whilst still storing the latent heat until activated.
The medium is gelled in the less hydrated phase and in some embodiments the gel is pseudoplastic thus enabling it to be poured into chambers of an energy storage device, and then regain its original viscosity at rest.

公开(公告)号：EP0775434B1

公开(公告)日：2007-08-08

申请号：EP95923850.2

申请日：1995-06-12

申请人： THE CHARLES STARK DRAPER LABORATORY, INC.

发明人： BERNSTEIN, Jonathan, J.

IPC分类号： H04R19/04

CPC分类号： H04R19/005 ,  H04R19/04

摘要： An acoustic transducer (10) includes a perforated member (12); a movable diaphragm (16) spaced from the perforated member (12); spring means (54, 56, 58, 60) interconnecting the diaphragm (16) and the perforated member (12) for movably supporting the diaphragm (16) relative to the perforated member (12); a pressure equalization slot (26) for controlling the flow of fluid through the diaphragm (16), the slot (26) equalizing the pressure on opposite sides of the diaphragm (16) for defining the low frequency response; and means (32) for applying an electric field across the perforated member (12) and the diaphragm (16) for producing an output signal representative of the variation of the space between the perforated member (12) and the diaphragm (16) in response to an incident acoustic signal.

公开(公告)号：EP1223515A3

公开(公告)日：2005-10-12

申请号：EP02004713.0

申请日：1996-05-16

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Ballachino, William E. ,  Colgan, James A. ,  Jacobelli, Franco

IPC分类号： G06F13/38

CPC分类号： G06F13/38 ,  G06F13/385

摘要： A bidirectional parallel signal interface for providing a parallel data interface between a computer and an external peripheral device includes an interface circuit with command registers for communicating commands and data, a first-in, first-out (FIFO) memory for communicating data between the computer and the peripheral device, and host and slave state machines for receiving commands from the command registers and in accordance therewith controlling communication of data between the FIFO and peripheral device and communicating control signals to and from the peripheral device. The communication of data between the FIFO and peripheral device is effected in accordance with the commands from the command registers. The communications of control signals by the host and slave state machines are responsive to their control signals with such responsiveness being control controllable in accordance with the commands from the command registers. The communication of data from the FIFO to the peripheral device is halted by the host state machine in accordance with its commands from the command registers. The command registers include a status register for storing data from the peripheral device representing a number of status states of the peripheral device.

摘要翻译： 用于在计算机和外部外围设备之间提供并行数据接口的双向并行信号接口包括具有用于传送命令和数据的命令寄存器的接口电路，用于在计算机和计算机之间传送数据的先进先出（FIFO）存储器， 和外围设备，以及主机和从机状态机，用于接收来自命令寄存器的命令并据此控制FIFO和外围设备之间的数据通信以及与外围设备传送控制信号。 FIFO和外围设备之间的数据通信是根据命令寄存器的命令来实现的。 主机和从机状态机的控制信号的通信响应于它们的控制信号，这种响应性是根据来自命令寄存器的命令控制可控的。 从FIFO到外围设备的数据通信由主机状态机根据命令寄存器的命令暂停。 命令寄存器包括状态寄存器，用于存储来自外围设备的表示外围设备的多个状态状态的数据。

公开(公告)号：EP1202516B1

公开(公告)日：2004-08-04

申请号：EP01128019.5

申请日：1996-03-08

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Greiss, Israel ,  Drucker, Rami ,  Montag, Gil ,  Shabtay, Ophir ,  Almagor, David

IPC分类号： H04L27/26 ,  H04B3/23 ,  H04B3/21

CPC分类号： H04L27/30 ,  H04B3/23 ,  H04L5/143 ,  H04L5/1461

公开(公告)号：EP0769207B1

公开(公告)日：2003-10-22

申请号：EP96913316.4

申请日：1996-05-01

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： HEBERT, François ,  BENCUYA, Izak ,  KWAN, Sze-Hon

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/456

摘要： A method of fabricating a trench DMOS transistor structure results in the contact to the transistor's source and body being self-aligned to the trench. With a self-aligned contact, the distance from the edge of the source and body contact to the edge of the trench can be minimized. Thus, the distance between the trench edges can be reduced. As a result, the packing density of the transistor is increased dramatically. This gives rise to much improved performance in terms of low on-resistance and higher current drive capability. The process flow maximizes the height of the trench poly gate prior to formation of oxide spacers for the self-contact contact, thereby ensuring sufficient step height for the spacers.

公开(公告)号：EP1343076A2

公开(公告)日：2003-09-10

申请号：EP03007738.2

申请日：1996-05-16

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Haines, Ralph Warren ,  O'Neill, Dan Craig ,  Pries, Stephen C. ,  Waterson, Kent B. ,  Weinman, David S. ,  Shay, Michael J. ,  Pang, Jianhua, Helen ,  Herrington, Daniel R. ,  Marley, Brian J. ,  Gunther, John R. ,  Nemirovsky, Mario ,  Perez, Alexander ,  Colgan, James A. ,  Divivier, Robert J.

IPC分类号： G06F9/38

CPC分类号： G06F11/3652 ,  G06F13/368

摘要： A microprocessor that executes instructions to process data in accordance with periodic cycles of a microprocessor system clock. A three-stage pipeline has decode (70), execute (72) and writeback (74) stages. The execution unit fetches instructions and operands and computes memory addresses utilized in retrieving these from storage and in writing results to storage. The decode unit also has a prefetch unit and microsequencer.

摘要翻译： 微处理器那样执行指令以处理与微处理器的系统时钟的周期循环在雅舞蹈数据。 的三阶段流水线有解码（70），执行（72）和回写（74）的阶段。 执行单元取出指令和操作数，并计算在检索论文fromStorage和书面结果存储已用的存储器地址。 因此解码单元具有预取单元和微定。

公开(公告)号：EP0626826B1

公开(公告)日：2002-10-02

申请号：EP93901158.1

申请日：1992-12-22

申请人： PLC MEDICAL SYSTEMS, INC.

发明人： RUDKO, Robert, I.

IPC分类号： A61B18/20

CPC分类号： A61B18/201 ,  A61B2017/00154 ,  A61B2017/00243 ,  A61B2017/00247 ,  A61B2017/00703 ,  A61B2018/00083 ,  A61B2018/00101 ,  A61B2018/00392 ,  A61B2090/036

摘要： A handpiece for use in transmyocardial revascularization heart-synchronized pulsed laser system includes a barrel (24) having a passage (62) for transmitting a laser beam; a surface (32) at the distal end of the barrel for contacting the wall of the heart (66); an aperture (26) located at the distal end of the barrel in the enlarged surface (32) for transmitting the laser beam; and means for focusing (42) the laser beam proximate to the aperture to vaporize the tissue of the heart wall and create a hole to the interior heart chamber.

摘要翻译： 用于经心脉血运重建心脏同步脉冲激光系统的手持件包括：具有用于传输激光束的通道（62）的筒（24） 在所述筒体远端处的用于接触所述心脏壁（66）的表面（32）; 位于所述扩大表面（32）中的所述镜筒远端处的孔（26），用于透射所述激光束; 以及用于将所述激光束聚焦（42）靠近所述孔以汽化所述心脏壁的组织并且向所述内部心脏腔室形成孔的装置。

公开(公告)号：EP0710400B1

公开(公告)日：2002-09-04

申请号：EP94920801.1

申请日：1994-06-24

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： DAUM, Keith, Edwin

IPC分类号： H01L27/02

CPC分类号： H01L23/573 ,  H01L27/02 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments according to the present invention provide tamper resistant structures which make it more difficult to reverse engineer integrated circuits. In one embodiment, a tamper resistant structure on a passivation layer leaves portions of the passivation layer exposed. Mechanical or chemical removal of the tamper resistant structure damages exposed portions of the passivation layer and makes reverse engineering difficult. Other embodiments of the tamper resistant structure include patterned and unpatterned structures containing hard materials, chemically resistant materials, amalgams, fibrous materials, and/or meshes attached to a passivation layer. Tamper resistant structures can also be provided between layers of the active circuitry.

公开(公告)号：EP1202516A2

公开(公告)日：2002-05-02

申请号：EP01128019.5

申请日：1996-03-08

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： Greiss, Israel ,  Drucker, Rami ,  Montag, Gil ,  Shabtay, Ophir ,  Almagor, David

IPC分类号： H04L27/26 ,  H04B3/23

CPC分类号： H04L27/30 ,  H04B3/23 ,  H04L5/143 ,  H04L5/1461

摘要： Near-end echo-reduction is achieved by passing a transmit signal through a first filter bank and feeding a remote signal plus an echo of the transmit signal through a second filter bank, then subtracting a gain-coefficient-compensated (scaled) version of the filtered transmit signal from the filtered-composite-remote signal to obtain an echo-reduced receive signal. The echo-reduced receive signal is suitably employed by tone decoders, voice response mechanisms, and the like, in a telephone system, and avoids false alarms due to near-end echo. In one embodiment, the gain coefficients are fixed for each frequency of interest. In another embodiment, the gain coefficients are dynamically arrived at based on the filtered transmit signal and the echo-reduced receive signal. The two filter banks can be combined in one, multiplexed filter bank.

摘要翻译： 通过将发射信号通过第一滤波器组并通过第二滤波器组馈送远程信号加上发射信号的回波，然后减去增益系数补偿（缩放）版本来实现近端回波减小 滤波后的复合远程信号的发送信号，以获得回波减小的接收信号。 回声减小接收信号在电话系统中由音调解码器，语音响应机制等适当地使用，并且避免由于近端回波引起的误报警。 在一个实施例中，对于感兴趣的每个频率，增益系数是固定的。 在另一个实施例中，增益系数是基于滤波的发射信号和回波减小的接收信号来动态地到达的。 两个滤波器组可以组合在一个复用滤波器组中。

公开(公告)号：EP0767973B1

公开(公告)日：2002-02-20

申请号：EP96911571.6

申请日：1996-04-03

申请人： NATIONAL SEMICONDUCTOR CORPORATION

发明人： MERRILL, Richards, B.

IPC分类号： H01L27/12

CPC分类号： H01L27/1203

摘要： A CMOS circuit formed in a silicon-on-insulator (SOI) substrate includes MOSFETs having drain and body diffusions which extend through the silicon layer to the surface of the insulating layer. Each of drains of the N-channel and P-channel MOSFETs serves also as a terminal (anode or cathode) of a diode that is connected in series with the MOSFET. This structure allows the CMOS device to be fabricated as a completely symmetrical structure without adding processing steps beyond those customary in fabricating conventional CMOS devices.