利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

84 条记录 (耗时 0.027 秒)

    SINGLE CRYSTAL DIAMOND MATERIAL, SINGLE CRYSTAL DIAMOND TIP, AND DRILLING TOOL
    75.
    发明公开
    SINGLE CRYSTAL DIAMOND MATERIAL, SINGLE CRYSTAL DIAMOND TIP, AND DRILLING TOOL 审中-公开

    公开(公告)号：EP3327179A1

    公开(公告)日：2018-05-30

    申请号：EP16827871.1

    申请日：2016-07-22

    申请人： Sumitomo Electric Industries, Ltd. ,  Sumitomo Electric Hardmetal Corp.

    发明人： NISHIBAYASHI, Yoshiki ,  TATSUMI, Natsuo ,  SUMIYA, Hitoshi ,  UEDA, Akihiko ,  KOBAYASHI, Yutaka

    IPC分类号： C30B29/04 ,  B23B51/00 ,  C23C16/27 ,  C30B25/20

    CPC分类号： C30B29/04 ,  B21C3/025 ,  C23C16/27 ,  C23C16/274 ,  C30B9/00 ,  C30B25/105 ,  C30B25/186 ,  C30B25/20

    摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. In a single-crystal diamond chip, a concentration of non-substitutional nitrogen atoms can be not more than 200 ppm, a concentration of substitutional nitrogen atoms can be lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond chip can have a main surface with an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal die has a low-index plane represented by a Miller index of not less than -5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

    METHOD FOR MANUFACTURING DIAMOND, DIAMOND, DIAMOND COMPOSITE SUBSTRATE, DIAMOND BONDED SUBSTRATE, AND TOOL
    77.
    发明公开
    METHOD FOR MANUFACTURING DIAMOND, DIAMOND, DIAMOND COMPOSITE SUBSTRATE, DIAMOND BONDED SUBSTRATE, AND TOOL 审中-公开
    制造钻石，钻石，钻石复合衬底，金刚石结合衬底和工具的方法

    公开(公告)号：EP3178971A1

    公开(公告)日：2017-06-14

    申请号：EP15829634.3

    申请日：2015-08-07

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： NISHIBAYASHI, Yoshiki ,  TATSUMI, Natsuo ,  SUMIYA, Hitoshi ,  NAKAMAE, Kazuo

    IPC分类号： C30B29/04 ,  C01B32/25 ,  C23C16/01 ,  C23C16/02 ,  C23C16/27 ,  C23C16/56

    CPC分类号： C30B25/186 ,  C01B31/06 ,  C01B32/25 ,  C23C14/48 ,  C23C16/01 ,  C23C16/02 ,  C23C16/0272 ,  C23C16/27 ,  C23C16/56 ,  C30B25/20 ,  C30B29/04 ,  C30B31/22 ,  C30B33/00 ,  C30B33/06

    摘要： Provided are: a method of manufacturing a diamond enabling separation of the diamond from a substrate in a short time and making respective separated surfaces of the substrate and the diamond flat; a diamond obtained by the method of manufacturing a diamond; and a diamond composite substrate, a diamond joined substrate, and a tool, for which the diamond is used. A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

    摘要翻译： 提供一种制造金刚石的方法，该金刚石能够在短时间内将金刚石与基板分离并且使基板和金刚石的各个分离表面平坦; 通过制造金刚石的方法获得的钻石; 以及金刚石复合衬底，金刚石接合衬底以及使用该金刚石的工具。 一种通过气相合成方法制造金刚石的方法，包括：准备包含金刚石晶种的基板; 通过对所述基板进行离子注入，形成光学透明度比所述基板低的光吸收层，所述光吸收层形成在离所述基板的主表面预定的深度处; 通过气相合成法在衬底的主表面上生长金刚石层; 以及通过施加来自所述金刚石层和所述基板中的至少一个的主表面的光而使所述金刚石层与所述基板分离，以允许所述光吸收层吸收所述光并使所述光吸收层破碎。

    SINGLE-CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME, TOOL INCLUDING SINGLE-CRYSTAL DIAMOND, AND COMPONENT INCLUDING SINGLE-CRYSTAL DIAMOND
    78.
    发明公开
    SINGLE-CRYSTAL DIAMOND AND METHOD FOR MANUFACTURING SAME, TOOL INCLUDING SINGLE-CRYSTAL DIAMOND, AND COMPONENT INCLUDING SINGLE-CRYSTAL DIAMOND 审中-公开
    单晶金刚石及其制造方法与单晶金刚石和COMPONENT单晶金刚石刀具THEREOF

    公开(公告)号：EP3173510A1

    公开(公告)日：2017-05-31

    申请号：EP15825061.3

    申请日：2015-07-22

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： TATSUMI, Natsuo ,  NISHIBAYASHI, Yoshiki ,  SUMIYA, Hitoshi

    IPC分类号： C30B29/04 ,  B23B27/14 ,  B23B27/20 ,  B24B53/047 ,  C01B32/25 ,  C23C16/27

    CPC分类号： C23C16/02 ,  B23B27/14 ,  B23B27/20 ,  B24B53/047 ,  C01B32/25 ,  C01P2002/70 ,  C23C16/27 ,  C30B25/186 ,  C30B25/20 ,  C30B29/04 ,  C30B29/68

    摘要： In an X-ray topography image for a crystal growth main surface (20m) of a single-crystal diamond (20), a group of crystal defect points (20dp) are gathered, each of the crystal defect points (20dp) being a tip point of a crystal defect line (20dq) reaching the crystal growth main surface (20m), the crystal defect line (20dq) representing a line in which a crystal defect (20d) exists. Further, in the single-crystal diamond (20), a plurality of crystal defect line-like gathered regions (20r) exist in parallel. In the plurality of crystal defect line-like gathered regions (20r), groups of crystal defect points (20dp) are gathered to extend in the form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction. Accordingly, a single-crystal diamond is provided which is used suitably for a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, and the like.

    摘要翻译： 在用于单晶金刚石（20）的晶体生长主面（20米）的X射线形貌图像，一组的晶体缺陷点（20DP）被收集，每一个都是尖的晶体缺陷点（20DP）的 到达晶体生长主面（20米）的晶体缺陷线（20dq）的点，表示其中的晶体缺陷（20D）中存在的线的晶体缺陷线（20dq）。 此外，在单晶金刚石（20），晶体缺陷线状聚集区域（20R）的多个平行的存在。 在晶体缺陷线状聚集区域（20R）的多元性的晶体缺陷点（20DP）基团被收集到在不超过30°相对于一个任意指定方向倾斜的方向以线的形式延伸。 因此，单晶金刚石是所有这一切适合用于切削工具，抛光工具，对光学部件，电子部件，半导体材料，和类似物提供。

    COMPOSITE SINTERED BODY
    80.
    发明公开
    COMPOSITE SINTERED BODY 审中-公开
    GESINTERTERVERBUNDKÖRPER

    公开(公告)号：EP3138827A1

    公开(公告)日：2017-03-08

    申请号：EP15785684.0

    申请日：2015-03-16

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： SATOH, Takeshi ,  SUMIYA, Hitoshi

    IPC分类号： C04B35/52 ,  B23B27/14 ,  B23B27/20 ,  C01B32/25

    CPC分类号： C04B35/52 ,  B21C3/025 ,  B23B27/14 ,  B23B27/20 ,  B23C5/18 ,  B23C2226/31 ,  B23C2240/08 ,  C01B32/25 ,  C04B35/528 ,  C04B35/645 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/785 ,  C04B2235/80 ,  C04B2235/96

    摘要： A composite sintered body (10) includes a diamond phase (11) and a non-diamond carbon phase (12). A non-diamond carbon phase occupancy rate is higher than 0% and not higher than 30%. The non-diamond carbon phase occupancy rate is a percentage of an area of the non-diamond carbon phase (12) to a total area of one arbitrarily specified cross section of the composite sintered body (10). As a result, there is provided a high wear-resistant, high local wear-resistant and high chipping-resistant diamond-containing composite sintered body suitably used as a material for a wear-resistant tool, a cutting tool and the like.

    摘要翻译： 复合烧结体（10）包括金刚石相（11）和非金刚石碳相（12）。 非金刚石碳相的使用率高于0％且不高于30％。 非金刚石碳相的占有率是非金刚石碳相（12）的面积与复合烧结体（10）的任意规定截面的总面积的百分比。 结果，提供了适合用作耐磨工具，切削工具等的材料的高耐磨，高局部耐磨和耐高折痕的含金刚石复合烧结体。