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1.
公开(公告)号:EP3237660B1
公开(公告)日:2018-12-05
申请号:EP15823672.9
申请日:2015-12-18
申请人: SAFRAN AIRCRAFT ENGINES , SAFRAN
发明人: BILLOTTE CABRE, Catherine , DROZ, Nicolas , LIAIS, Ludovic , PODGORSKI, Michael , RUIZ, Edu , TURENNE, Sylvain
IPC分类号: C04B35/80 , C04B35/117 , D03D15/00 , C04B35/111 , C04B35/14 , C04B35/18 , C04B35/185 , C04B35/447 , C04B35/48 , C04B35/56 , C04B35/565 , C04B35/58 , C04B35/634 , B28B1/24 , B28B1/26 , B28B7/36 , B28B23/02 , C04B35/626 , B29C70/48 , D03D25/00 , F01D5/28
CPC分类号: C04B35/803 , B28B1/265 , B28B1/52 , B28B7/368 , B28B11/243 , B28B23/02 , B29C70/48 , B29K2309/02 , B29K2509/02 , C04B35/117 , C04B35/14 , C04B35/18 , C04B35/185 , C04B35/447 , C04B35/565 , C04B35/58071 , C04B35/62625 , C04B35/62847 , C04B35/62886 , C04B35/62892 , C04B35/634 , C04B35/64 , C04B35/806 , C04B2235/5224 , C04B2235/5228 , C04B2235/5232 , C04B2235/5244 , C04B2235/5248 , C04B2235/5252 , C04B2235/5256 , C04B2235/5436 , C04B2235/5445 , C04B2235/5463 , C04B2235/6022 , C04B2235/6027 , C04B2235/604 , C04B2235/616 , D03D25/005 , D10B2101/20 , F01D5/282 , F01D5/284 , F05D2300/601 , F05D2300/6033 , F05D2300/6034
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公开(公告)号:EP2349931B1
公开(公告)日:2018-12-05
申请号:EP09737344.3
申请日:2009-10-07
申请人: Johnson Matthey PLC
发明人: DOLLINGER, Jasmin , POLLNER, Andreas , HOLZAPFEL, Michael , TRAN, Nicolas , SCHALL, Norbert , EISGRUBER, Max
IPC分类号: C01G23/00 , H01M4/36 , H01M4/48 , H01M4/62 , B82Y30/00 , C04B35/626 , C04B35/628 , C04B35/636 , H01M4/485 , H01M10/052
CPC分类号: C04B35/62625 , B82Y30/00 , C01G23/005 , C01P2002/32 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2004/80 , C01P2006/12 , C01P2006/40 , C04B35/62655 , C04B35/6268 , C04B35/62839 , C04B35/636 , C04B2235/3203 , C04B2235/3234 , C04B2235/44 , C04B2235/442 , C04B2235/443 , C04B2235/449 , C04B2235/48 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/549 , H01M4/366 , H01M4/485 , H01M4/625 , H01M10/052 , Y02E60/122
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公开(公告)号:EP2918567B1
公开(公告)日:2018-11-28
申请号:EP15157953.9
申请日:2015-03-06
申请人: NGK Insulators, Ltd.
发明人: Kikuchi, Yoshio
IPC分类号: C04B35/117 , C04B35/636 , C04B35/638 , C04B38/00 , C04B37/00 , B01J35/04 , B01D46/24 , C04B111/00 , B01J23/10
CPC分类号: B01D46/2429 , B01D46/244 , B01D53/94 , B01D2046/2433 , B01D2046/2437 , B01D2046/2496 , B01D2258/01 , B01J23/10 , B01J35/04 , C04B35/117 , C04B38/0006 , C04B2111/00793 , C04B2111/0081 , C04B2201/30 , C04B2235/3217 , C04B2235/3225 , C04B2235/3427 , C04B2235/3481 , C04B2235/349 , C04B2235/5436 , C04B2235/5445 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , F01N3/0222 , C04B35/10 , C04B35/195 , C04B35/50 , C04B38/0016 , C04B38/0054 , C04B38/0074
摘要: There is disclosed a plugged honeycomb structure which can inhibit a temperature rise during use at high temperatures and is excellent in thermal shock resistance. A plugged honeycomb structure 100 includes a pillar-shaped honeycomb structure body 4 having porous partition walls 1 defining a plurality of cells 2 which become through channels for a fluid and extend from a first end face 11 to a second end face 12, and plugging portions 5 disposed in open ends of predetermined cells 2b in the first end face 11 and open ends of residual cells 2a in the second end face 12, and the partition walls 1 are constituted of a porous body including ±-Al 2 O 3 as a main phase and further including cordierite and Y 2 Si 2 O 7 .
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公开(公告)号:EP3401040A1
公开(公告)日:2018-11-14
申请号:EP18177709.5
申请日:2011-08-10
CPC分类号: B01J3/062 , B01J2203/061 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , B23B2226/315 , B23C2226/315 , B24B53/12 , B24D3/00 , C01B32/25 , C04B35/528 , C04B35/645 , C04B2235/425 , C04B2235/427 , C04B2235/5445 , C04B2235/762 , C04B2235/96 , C04B2235/963 , Y10T83/0215 , Y10T83/0333 , Y10T83/0385 , Y10T83/929 , Y10T83/9372 , Y10T428/24975 , Y10T428/265
摘要: Polycrystalline diamond includes cubic diamond and hexagonal diamond, and a ratio of X-ray diffraction peak intensity of a (100) plane of the hexagonal diamond to X-ray diffraction peak intensity for a (111) plane of cubic diamond is not lower than 0.01%. In addition, a present method of manufacturing polycrystalline diamond includes the steps of preparing a non-diamond carbon material having a degree of graphitization not higher than 0.58 and directly converting the non-diamond carbon material to cubic diamond and hexagonal diamond and sintering the non-diamond carbon material, without adding any of a sintering agent and a binder, under pressure and temperature conditions at which diamond is thermodynamically stable.
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公开(公告)号:EP2310821B1
公开(公告)日:2018-11-07
申请号:EP09779900.1
申请日:2009-06-23
IPC分类号: G01L9/00 , C03C10/00 , C04B35/645
CPC分类号: G01L9/0042 , C04B35/111 , C04B35/62655 , C04B35/6455 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3418 , C04B2235/5216 , C04B2235/5409 , C04B2235/5445 , C04B2235/604 , C04B2235/608 , C04B2235/6562 , C04B2235/6565 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/96 , G01L9/0075
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公开(公告)号:EP3391390A1
公开(公告)日:2018-10-24
申请号:EP16822388.1
申请日:2016-12-13
申请人: Epcos AG
IPC分类号: H01C7/04
CPC分类号: H01C7/046 , C04B35/016 , C04B35/62675 , C04B35/62695 , C04B2235/3213 , C04B2235/3227 , C04B2235/3262 , C04B2235/5445 , C04B2235/77 , H01C1/1413 , H01C7/045 , H01C7/13 , H01C17/281 , H02H9/001
摘要: The invention relates to an NTC ceramic part for use in an electronic component (10) for inrush current limiting, the NTC ceramic part having an electric resistance in the mΩ range at a temperature of 25°C and/or at room temperature. The invention further relates to an electronic component (10), a method for manufacturing an electronic component (10), and a system (200) comprising at least one electronic component (10).
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公开(公告)号:EP2773598B1
公开(公告)日:2018-10-17
申请号:EP12778341.3
申请日:2012-10-24
申请人: Epcos AG
IPC分类号: C04B35/491 , C04B35/638 , C04B35/634 , C04B35/626 , H01L41/43 , H01L41/083 , H01L41/273 , H01L41/187
CPC分类号: H01L41/43 , C04B35/491 , C04B35/6262 , C04B35/62655 , C04B35/62685 , C04B35/63456 , C04B35/638 , C04B2235/3201 , C04B2235/3224 , C04B2235/3279 , C04B2235/3281 , C04B2235/442 , C04B2235/449 , C04B2235/5445 , C04B2235/6025 , C04B2235/6562 , C04B2235/6567 , C04B2235/768 , H01L41/083 , H01L41/1873 , H01L41/1876 , H01L41/273
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公开(公告)号:EP2603465B1
公开(公告)日:2018-09-12
申请号:EP11746657.3
申请日:2011-07-22
发明人: LINNOT, Cyril , MOITRIER, Lionel , BOUSSANT ROUX, Yves, Marcel, Léon , CITTI, Olivier , AVEDIKIAN, Richard
IPC分类号: C04B35/626 , C04B35/105 , C04B35/106 , C04B35/12 , C04B35/66 , C03B5/43
CPC分类号: C03B5/43 , C04B35/105 , C04B35/106 , C04B35/12 , C04B35/6261 , C04B35/6262 , C04B35/62665 , C04B2235/3201 , C04B2235/3208 , C04B2235/3217 , C04B2235/3232 , C04B2235/3241 , C04B2235/3244 , C04B2235/3418 , C04B2235/5409 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/72 , C04B2235/77 , C04B2235/96 , C04B2235/963 , C04B2235/9692 , Y10T428/2982
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公开(公告)号:EP3361542A1
公开(公告)日:2018-08-15
申请号:EP18000088.7
申请日:2018-02-01
发明人: Aikawa, Norikazu , Hata, Kazuo , Noda, Nobuhisa
IPC分类号: H01M8/1253 , H01M8/00 , C04B35/48 , C04B35/634
CPC分类号: H01M8/1253 , C04B35/486 , C04B35/6342 , C04B35/63424 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/5409 , C04B2235/5445 , C04B2235/5463 , C04B2235/6025 , C04B2235/762 , C04B2235/77 , H01M4/88 , H01M8/006 , H01M2008/1293 , H01M2250/10 , H01M2300/0077 , Y02B90/14 , Y02E60/525 , Y02P70/56
摘要: The objective of the present invention is to provide a zirconia electrolyte which has high strength and which is suitable for a solid electrolyte layer of a solid oxide fuel cell, and a method for producing a zirconia electrolyte having high strength. The zirconia electrolyte according to the present invention is characterized in essentially consisting of zirconia stabilized by one or a plurality of oxides of rare earth selected from the group of scandium, yttrium, cerium, gadolinium and ytterbium, wherein a standard deviation of pore numbers in 10 or more regions having an area of 50 µm 2 and not overlapping with each other on a fracture surface is 2.5 or more.
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公开(公告)号:EP3054029B1
公开(公告)日:2018-08-15
申请号:EP15770392.7
申请日:2015-03-13
发明人: OHASHI Kazumasa , ODA Kunihiro
CPC分类号: C23C14/3414 , C04B35/5611 , C04B35/5626 , C04B35/64 , C04B35/645 , C04B2235/5445 , C04B2235/6562 , C04B2235/6567 , C04B2235/6581 , C04B2235/72 , C04B2235/77 , C04B2235/81 , C04B2235/96 , C23C14/0635 , C23C14/35 , H01J37/3426 , H01J37/3491
摘要: The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.
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