公开(公告)号：EP0772183A2

公开(公告)日：1997-05-07

申请号：EP96307898.5

申请日：1996-10-31

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kim, Kyung-seop ,  Park, Woon-yong ,  Lee, Jung-hee ,  Kim, Shi-yual ,  Lee, Kyung-nam ,  Kim, Dong-gyo

IPC分类号： G09G3/36

CPC分类号： G02F1/1309 ,  G02F1/136259 ,  G02F1/136286 ,  G02F2001/136263 ,  G02F2001/136268 ,  G02F2001/136272

摘要： A matrix-type display capable of being repaired by pixel unit, Two or more of signal lines such as scanning lines, image signal lines and auxiliary signal lines and a pixel electrode are overlapped via an insulating layer, so that a defect such as the disconnection of the image signal lines and scanning lines, the short of the pixel electrode and the signal line, and the loss of electrode of a switching element, and a pixel defect can be repaired. Here, the layout of the auxiliary gate line and dual gate line can be modified.

公开(公告)号：EP0304657B1

公开(公告)日：1993-10-13

申请号：EP88112172.7

申请日：1988-07-27

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： Kato, Kinya ,  Kakuda, Nobuhiko ,  Naito, Noboru ,  Wada, Tsutomu

IPC分类号： H01L29/78 ,  H01L21/84 ,  G02F1/133

CPC分类号： H01L27/124 ,  G02F1/1368 ,  G02F2001/136263 ,  G02F2001/13629 ,  H01L27/1214 ,  H01L27/1288

摘要： An active matrix cell includes a first conductor group (102) formed on a transparent substrate (100), two-layered regions (103A, 103B) consisting of a semiconductor film (103a) and a first insulating film (103b), a second insulating film (104) and a second conductor group (105). The first conductor group forms the source (5) and drain (6) of a thin film transistor (3) a pixel electrode (4) and a data line (1). One (103A) of two-layered regions serves as an active region of the thin film transistor (3) and the other (103B) of the two-layered regions serves as the intersection (7) between the data (1) and scanning lines (2). The second insulating film (105) is enclosed in the gap between the two-layered regions and the first conductor group, and has substantially the same thickness as the two-layered regions. The second conductor group forms the scanning line and the part of the data line. A method of manufacturing the active matrix cell is also disclosed.

公开(公告)号：EP0407168A3

公开(公告)日：1992-07-01

申请号：EP90307305.4

申请日：1990-07-04

申请人： SHARP KABUSHIKI KAISHA

发明人： Miyago, Makoto ,  Oka, Hiroshi ,  Imaya Akihiko ,  Kato, Hiroaki ,  Nagayasu, Takayoshi ,  Hirobe, Toshihiko

IPC分类号： H01L27/12 ,  G02F1/136

CPC分类号： H01S5/40 ,  G02F1/136286 ,  G02F2001/136263 ,  G02F2001/13629 ,  H01L27/12 ,  H01S5/0425

摘要： The production of a thin film semiconductor laser array device having a gate wiring on an insulated substrate. The gate wiring has an inner gate wiring having a first metal layer formed on the insulated substrate and a second metal layer whose etching speed is faster than that of the first metal layer, the first metal layer and the second metal layer being overlapped so as to constitute a dual structure, and an outer gate wiring covering the inner gate wiring.

公开(公告)号：EP0236167B1

公开(公告)日：1991-09-25

申请号：EP87400159.7

申请日：1987-01-23

申请人： Maurice, François

发明人： Maurice, François

IPC分类号： G02F1/133

CPC分类号： G02F1/1345 ,  G02F1/1362 ,  G02F1/136204 ,  G02F2001/136263 ,  G02F2001/136272

公开(公告)号：EP0407168A2

公开(公告)日：1991-01-09

申请号：EP90307305.4

申请日：1990-07-04

申请人： SHARP KABUSHIKI KAISHA

发明人： Miyago, Makoto ,  Oka, Hiroshi ,  Imaya Akihiko ,  Kato, Hiroaki ,  Nagayasu, Takayoshi ,  Hirobe, Toshihiko

IPC分类号： H01L27/12 ,  G02F1/136

CPC分类号： H01S5/40 ,  G02F1/136286 ,  G02F2001/136263 ,  G02F2001/13629 ,  H01L27/12 ,  H01S5/0425

摘要： The production of a thin film semiconductor laser array device having a gate wiring on an insulated substrate. The gate wiring has an inner gate wiring having a first metal layer formed on the insulated substrate and a second metal layer whose etching speed is faster than that of the first metal layer, the first metal layer and the second metal layer being overlapped so as to constitute a dual structure, and an outer gate wiring covering the inner gate wiring.

摘要翻译： 制造在绝缘基板上具有栅极布线的薄膜半导体激光器阵列器件。 栅极布线具有内绝缘基板上形成有第一金属层的内部栅极布线和蚀刻速度快于第一金属层的蚀刻速度的第二金属层，第一金属层和第二金属层重叠， 构成双重结构，以及覆盖内部栅极布线的外部栅极布线。

公开(公告)号：EP0269123A3

公开(公告)日：1990-10-10

申请号：EP87117591.5

申请日：1987-11-27

申请人： NEC CORPORATION

发明人： Noguchi, Kesao c/o NEC Corporation

IPC分类号： H01L27/12 ,  H01L29/78 ,  G02F1/133

CPC分类号： H01L27/12 ,  G02F1/133512 ,  G02F1/1368 ,  G02F2001/136263 ,  G02F2001/13629 ,  G02F2202/103 ,  G02F2202/104

摘要： A thin film transistor array board includes an insulator substrate, a matrix of gate electrodes formed on the insulator substrate and covered with a gate insulator film, a matrix of semiconductor islands formed on the gate insulator film positioning on the gate electrodes, source wirings connected to the source regions of the semiconductor islands, drain wirings connected in common to the drain regions of the semiconductor islands aligned in the same line in parallel with the columns of the gate electrode matrix, a second insulator film covering the whole surface including the drain wirings, the source wirings, the semiconductor islands and the pixel electrodes, the second insulator film having grooves exposing the drain wirings with and auxiliary wirings formed in the grooves in contact with the drain wirings.

公开(公告)号：EP0373586A2

公开(公告)日：1990-06-20

申请号：EP89122908.0

申请日：1989-12-12

申请人： HOSIDEN CORPORATION

发明人： Ukai, Yasuhiro ,  Sunata, Tomihisa ,  Yukawa, Teizo

IPC分类号： G02F1/136

CPC分类号： G02F1/1309 ,  G02F1/136259 ,  G02F2001/136263

摘要： In an active matrix liquid crystal display device in which a source and gate buses are arranged in a matrix form, thin film transistors are provided at intersections of the source and gate buses and display electrodes are driven by applying voltage thereto via the thin film transistors, source bus repair conductive layers (41) are provided which extend along the source buses (19) in opposing relation thereto across an insulating layer (23). When any one of the source buses (19) is broken, the repair conductive layer (41) and the broken source bus (19) can be connected at both sides (43) of the broken portion (44) by laser welding (LB).

摘要翻译： 在其中源极和栅极总线以矩阵形式排列的有源矩阵液晶显示装置中，在源极和栅极总线的交叉点处提供薄膜晶体管，并且通过经由薄膜晶体管向其施加电压来驱动显示电极， 提供源极总线修复导电层（41），所述源极总线修复导电层（41）沿着源极总线（19）以跨过绝缘层（23）的相对关系延伸。 当任何一个源极总线（19）断裂时，可以通过激光焊接（LB）在断裂部分（44）的两侧（43）连接修复导电层（41）和断裂源极总线（19） 。

公开(公告)号：EP0318224A2

公开(公告)日：1989-05-31

申请号：EP88310967.0

申请日：1988-11-21

申请人： SHARP KABUSHIKI KAISHA

发明人： Katayama, Mikio ,  Tanaka, Hirohisa ,  Shimada, Yasunori ,  Morimoto, Hiroshi

IPC分类号： G02F1/133

CPC分类号： G02F1/1368 ,  G02F1/13624 ,  G02F2001/136263 ,  G02F2001/136268

摘要： An active matrix substrate for the liquid crystal display has a switching circuit for switching on each of picture elements which is comprised of the corresponding gate bus line (21), source bus line (25) and a switching transistor (31) and the switching circuit includes at least one redundant structure for avoiding the inoperativeness of the switching circuit.

摘要翻译： 用于液晶显示器的有源矩阵基板具有切换电路，用于切换由相应的栅极总线（21），源极总线（25）和开关晶体管（31）构成的像素和开关电路 包括至少一个用于避免开关电路的不能操作的冗余结构。

公开(公告)号：EP0304657A2

公开(公告)日：1989-03-01

申请号：EP88112172.7

申请日：1988-07-27

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： Kato, Kinya ,  Kakuda, Nobuhiko ,  Naito, Noboru ,  Wada, Tsutomu

IPC分类号： H01L29/78 ,  H01L21/84 ,  G02F1/133

CPC分类号： H01L27/124 ,  G02F1/1368 ,  G02F2001/136263 ,  G02F2001/13629 ,  H01L27/1214 ,  H01L27/1288

摘要： An active matrix cell includes a first conductor group (102) formed on a transparent substrate (100), two-layered regions (103A, 103B) consisting of a semiconductor film (103a) and a first insulating film (103b), a second insulating film (104) and a second conductor group (105). The first conductor group forms the source (5) and drain (6) of a thin film transistor (3) a pixel electrode (4) and a data line (1). One (103A) of two-­layered regions serves as an active region of the thin film transistor (3) and the other (103B) of the two-layered regions serves as the intersection (7) between the data (1) and scanning lines (2). The second insulating film (105) is enclosed in the gap between the two-layered regions and the first conductor group, and has substantially the same thickness as the two-­layered regions. The second conductor group forms the scanning line and the part of the data line. A method of manufacturing the active matrix cell is also disclosed.

摘要翻译： 有源矩阵单元包括形成在透明基板（100）上的第一导体组（102），由半导体膜（103a）和第一绝缘膜（103b）构成的双层区域（103A，103B），第二绝缘体 薄膜（104）和第二导体组（105）。 第一导体组形成像素电极（4）和数据线（1）的薄膜晶体管（3）的源极（5）和漏极（6）。 一层（103A）的两层区域用作薄膜晶体管（3）的有源区，另一层（103B）用作数据（1）和扫描线之间的交点（7） （2）。 第二绝缘膜（105）封装在两层区域和第一导体组之间的间隙中，并且具有与两层区域基本相同的厚度。 第二导体组形成扫描线和数据线的一部分。 还公开了制造有源矩阵电池的方法。

公开(公告)号：EP0194519A3

公开(公告)日：1988-08-03

申请号：EP86102561

申请日：1986-02-27

申请人： ENERGY CONVERSION DEVICES, INC.

发明人： Johnson, Robert R.

IPC分类号： H01L23/52

CPC分类号： H01L23/5382 ,  G02F2001/136263 ,  H01L24/06 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H05K1/0293 ,  H05K3/225 ,  H05K2203/105 ,  H05K2203/173 ,  Y10S148/055 ,  Y10T29/49004 ,  Y10T29/49124 ,  H01L2924/00

摘要： Circuit assembly (10) is disclosed which includes a supporting substrate (11), a plurality of conductive lines (14,16) supported on the substrate and a deposited phase-change material (12) capable of an energy induced phase change from an initially high resistance state to a relatively low resistance state placed in electrical contact with the conductive lines. The assembly also includes contact receiving means (24) connected to the conductive lines at preselected discrete locations to receive externally applied contact means (28), such as electric probes, for applying voltages across selected portions of the conductive lines. The application of such voltages can induce a phase change in portions of the phase-change material which bridge breaks ( 1 8) in the conductive lines of such circuit subassemblies, changing such portions from their high resistance state to their low resistance state, thereby forming electrically shunting conductive paths around such open circuits. There are also disclosed methods of making such circuit assemblies.