公开(公告)号：EP3411753A1

公开(公告)日：2018-12-12

申请号：EP17868493.2

申请日：2017-10-31

Applicant: BOE Technology Group Co., Ltd. ,  Chengdu BOE Optoelectronics Technology Co., Ltd.

Inventor： WANG, Yang ,  LIU, Tingliang ,  HUANG, Weiyun ,  GAO, Shan ,  XU, Yuanjie ,  ZANG, Pengcheng ,  CAO, Zhonglin

IPC: G02F1/1362

CPC classification number: G02F1/136204

Abstract: A display substrate includes a substrate, a first portion, a second portion, and a protruding portion. The first portion, the second portion, and the protruding portion are disposed over an upper surface of the substrate. The first portion is configured to coat a conductive adhesive thereon for attachment, and for electric coupling, of the display substrate with an encasing substrate. The second portion includes at least one wiring. The protruding portion is disposed between the first portion and the second portion, and is configured to prevent the conductive adhesive coated on the first portion from spreading to the second portion. One or more first depressions can be further arranged between the first portion and the protruding portion, configured such that a bottom surface thereof has a shorter distance to the upper surface of the substrate than the upper surface of the first portion.

公开(公告)号：EP2442366B1

公开(公告)日：2018-10-17

申请号：EP10786088.4

申请日：2010-06-01

Applicant: Sharp Kabushiki Kaisha

Inventor： MORIWAKI, Hiroyuki

IPC: H01L29/786 ,  G02F1/1345 ,  G02F1/1368 ,  H01L21/822 ,  H01L27/04 ,  H01L27/02 ,  H01L27/01 ,  G02F1/1362

CPC classification number: H01L27/0255 ,  G02F1/136204 ,  H01L27/016 ,  H01L29/7869

Abstract: A semiconductor device includes a thin-film diode ( 1 ) and a protection circuit with a protection diode ( 20 ). The thin-film diode ( 1 ) includes: a semiconductor layer with first, second and channel regions; a gate electrode; a first electrode ( S1 ) connected to the first region and the gate electrode; and a second electrode ( D1 ) connected to the second region. The conductivity type of the thin-film diode ( 1 ) may be N-type and the anode electrode of the protection diode ( 20 ) may be connected to a line ( 3 ) that is connected to either the gate electrode or the first electrode of the thin-film diode ( 1 ). Or the conductivity type of the thin-film diode may be P-type and the cathode electrode of the protection diode may be connected to the line that is connected to either the gate electrode or the first electrode of the thin-film diode. The protection circuit includes no other diodes that are connected to the line ( 3 ) so as to have a current flowing direction opposite to the protection diode's ( 20 ). As a result, deterioration of a thin-film diode due to ESD can be reduced with an increase in circuit size minimized.

公开(公告)号：EP3021166B1

公开(公告)日：2018-07-25

申请号：EP15183487.6

申请日：2015-09-02

Applicant: LG Display Co., Ltd.

Inventor： SHIN, MiHee ,  KIM, TaeSang ,  KIM, MinGyeong

IPC: G02F1/1362 ,  G02F1/1345

CPC classification number: H01L27/1296 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  H01L21/47635 ,  H01L27/124 ,  H01L29/66969 ,  H01L29/7869

Abstract: A display device (100) according to an embodiment includes a plurality of driving blocks (COG) including a plurality of gate lines (GL) and a gate shorting structure spaced apart from the gate lines (GL) by an amount equal to a trimming region; an equipotential line (130) extending from one of the driving blocks (COG) to an adjacent driving block (COG), part of which is removed by the amount equal to the trimming region; a gate dummy line (132) extending from at least one of the driving blocks (COG); a plurality of data lines (DL) intersecting the gate lines (GL); and an active layer (138) disposed between the gate dummy line (132) and the data lines (DL), wherein some part of the active layer (138) that overlaps the gate dummy line (132) but does not overlap the data lines (DL) is removed.

公开(公告)号：EP3260911A4

公开(公告)日：2018-02-21

申请号：EP16764503

申请日：2016-03-17

Applicant: TOPPAN PRINTING CO LTD

Inventor： ISHIZAKI MAMORU

IPC: H01L27/12 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/822 ,  H01L27/04 ,  H01L29/786

CPC classification number: G02F1/1343 ,  G02F1/1362 ,  G02F1/136204 ,  G03F7/00 ,  G09F9/30 ,  G09F9/35 ,  H01L21/822 ,  H01L27/04 ,  H01L27/1255 ,  H01L27/1292 ,  H01L29/786

Abstract: Provided is a thin-film transistor array and a method for manufacturing the same, which prevents failure of a gate driver or power supply even when there is short-circuiting between a gate wire and a capacitor wire. The thin-film transistor array includes: an insulating substrate; a gate insulating film; a gate electrode, a gate wire connected to the gate electrode, a capacitor electrode, and a capacitor wire connected to the capacitor electrode, all of which sandwiching the gate insulating film with a source electrode, a source wire connected to the source electrode, a drain electrode, and a pixel electrode connected to the drain electrode. In the thin-film transistor array, the pixel electrode is laid over the capacitor electrode via the gate insulating film to have a storage capacitance; the source electrode and the drain electrode are laid over the gate electrode via the gate insulating film; a semiconductor layer is provided between the source electrode and the drain electrode; and a resistor is provided in part of the capacitor wire.

公开(公告)号：EP1942525B1

公开(公告)日：2017-11-15

申请号：EP07025011.3

申请日：2007-12-21

Applicant: Samsung Display Co., Ltd.

Inventor： Kim, Jeong-II ,  Baek, Seung-Soo ,  Lee, Chang-Soo ,  Lee, Min-Cheol

IPC: H01L27/12 ,  G02F1/1362 ,  G09G3/36 ,  G11C19/18 ,  G11C19/28

CPC classification number: H01L27/124 ,  G02F1/136204 ,  G09G3/3677 ,  G09G2330/04 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1214 ,  H01L27/1255

Abstract: A gate driving circuit including a plurality of stages dependently connected to one another. Each stage comprises a gate pad formed at one end of a gate line; a pull-up transistor outputting a gate driving signal for driving the gate line; a capacitor formed with a dielectric substance disposed between a first electrode connected to a gate electrode of the pull-up transistor and a second electrode connected to a drain electrode of the pull-up transistor; a first connecting electrode connecting the gate pad to the second electrode; a holding transistor connected to the pull-up transistor to maintain a voltage level of the gate driving signal; a switching transistor connected to the pull-up transistor and the capacitor to control the holding transistor through the gate driving signal; and a second connecting electrode connecting the second electrode to the gate electrode of the switching transistor.

公开(公告)号：EP3208654A1

公开(公告)日：2017-08-23

申请号：EP15791472.2

申请日：2015-04-20

Applicant: BOE Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co. Ltd

Inventor： HAN, Lei ,  WU, Tao ,  WEI, Pingyu ,  WANG, Hewei

IPC: G02F1/133 ,  G02F1/1345

CPC classification number: H01L22/30 ,  G02F1/133345 ,  G02F1/13439 ,  G02F1/136204 ,  G02F1/136286 ,  G02F2001/136254 ,  G02F2001/13629 ,  G02F2203/69 ,  H01L27/124 ,  H01L27/1244

Abstract: The present invention provides a short-circuit unit comprising: a plurality of signal lines divided into a plurality of groups, each group comprising multiple signal lines, and the multiple signal lines in a same group are not adjacent to each other; a plurality of short-circuit lines, each group of the signal lines correspond to one short-circuit line, and the short-circuit line electrically connects all of the signal lines in the group corresponding to the short-circuit line, the plurality of short-circuit lines are disposed in different layers and the short-circuit lines in different layers are insulated from each other. The present invention also provides an array substrate. In the short-circuit unit of the present invention, the short-circuit lines are disposed in different layers. Compared to the existing solutions in which the short-circuit lines are provided in a same layer, the width occupied by the short-circuit unit of the present invention is smaller.

Abstract translation: 本发明提供了一种短路单元，包括：被划分成多个组的多个信号线，每个组包括多个信号线，并且同一组中的多个信号线彼此不相邻; 多条短路线，每组信号线对应于一条短路线，并且短路线电连接对应于短路线的组中的所有信号线，多条短路线 电路线设置在不同的层中，并且不同层中的短路线彼此绝缘。 本发明还提供了一种阵列基板。 在本发明的短路单元中，短路线设置在不同的层中。 与现有的短路线设置在同一层的解决方案相比，本发明的短路单元占用的宽度更小。

公开(公告)号：EP2950139A1

公开(公告)日：2015-12-02

申请号：EP14182774.1

申请日：2014-08-29

Applicant: LG Display Co., Ltd.

Inventor： Choi, SeongWook ,  Kim, EunHong ,  Song, JongHun

IPC: G02F1/1362 ,  G02F1/1337

CPC classification number: G02F1/136204 ,  G02F1/1333 ,  G02F1/133784 ,  G02F1/13439 ,  G02F2001/133388

Abstract: The present disclosure is related to a liquid crystal display device including: a TFT array substrate (210) including an active display area and a non-active area which corresponds to the peripheral area of the active display area; a static electricity absorbing pattern (300) of a conductive lattice formed in the non-active area to absorb static electricity generated during the rubbing treatment of a liquid crystal alignment layer formed on the TFT array substrate (210); and a colour filter substrate (220) facing the TFT array substrate (210).

Abstract translation: 本发明涉及一种液晶显示装置，包括：TFT阵列基板（210），包括有源显示区域和对应于有源显示区域的周边区域的非有效区域; 在非活性区域形成的导电晶格的静电吸收图案（300），用于吸收在TFT阵列基板（210）上形成的液晶取向层的摩擦处理期间产生的静电; 以及面向TFT阵列基板（210）的滤色器基板（220）。

公开(公告)号：EP1927888B1

公开(公告)日：2015-06-03

申请号：EP07022653.5

申请日：2007-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Lee, Jae Kyeong ,  Lim, Hyo Taek ,  Song, Young Goo ,  Jun, Sahng Ik ,  Woo, Ja Hee

IPC: G02F1/1362

CPC classification number: G02F1/13624 ,  G02F1/136204 ,  G02F1/136286

公开(公告)号：EP2755239A1

公开(公告)日：2014-07-16

申请号：EP12767502.3

申请日：2012-04-02

Applicant: Sharp Kabushiki Kaisha

Inventor： HARA Yoshihito ,  NAKATA Yukinobu

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/861

CPC classification number: H01L27/1225 ,  G02F1/136204 ,  G02F1/1365 ,  G02F2202/22 ,  H01L29/7869

Abstract: A semiconductor device ( 100 ) according to the present invention includes a diode element ( 10 ). The diode element ( 10 ) includes: a first electrode ( 3 ) made of the same electrically conductive film as a gate electrode of a thin film transistor; an oxide semiconductor layer ( 5 ); and a second electrode ( 6 ) and a third electrode ( 7 ) being made of the same electrically conductive film as a source electrode of the thin film transistor and being in contact with the oxide semiconductor layer ( 5 ). The oxide semiconductor layer ( 5 ) includes offset regions ( 19 ) respectively between the first electrode ( 3 ) and the second electrode ( 6 ) and between the first electrode ( 3 ) and the third electrode ( 7 ).

Abstract translation: 根据本发明的半导体器件（100）包括二极管元件（10）。 二极管元件（10）包括：由与薄膜晶体管的栅电极相同的导电膜制成的第一电极（3） 氧化物半导体层（5）; 以及与所述薄膜晶体管的源电极相同的导电膜与所述氧化物半导体层（5）接触的第二电极（6）和第三电极（7）。 氧化物半导体层（5）分别包括第一电极（3）和第二电极（6）之间以及第一电极（3）和第三电极（7）之间的偏移区域（19）。

公开(公告)号：EP2133739B1

公开(公告)日：2013-08-07

申请号：EP09162468.4

申请日：2009-06-11

Applicant: Samsung Display Co., Ltd.

Inventor： Bang, Hyun-Chol ,  Han, Sam-Il

IPC: G02F1/1362 ,  G02F1/13 ,  G02F1/1345 ,  H01L27/32 ,  H05K1/11

CPC classification number: G02F1/136204 ,  G02F1/133351 ,  G02F1/1345 ,  G02F1/13452 ,  G02F1/13458 ,  H01L27/3276 ,  H01L2251/566 ,  H05K1/0259 ,  H05K1/0306 ,  H05K1/117 ,  H05K3/0052 ,  H05K3/361 ,  H05K2201/09781 ,  H05K2201/10128 ,  H05K2203/175