公开(公告)号：EP1265279A4

公开(公告)日：2004-11-24

申请号：EP01912317

申请日：2001-03-13

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI

IPC分类号： C23C8/02 ,  C23C8/36 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/792 ,  H01L29/788

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

公开(公告)号：EP1300619A4

公开(公告)日：2004-08-11

申请号：EP00935552

申请日：2000-06-05

申请人： FUJIKIN KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  NISHINO KOUJI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO ,  DOHI RYOUSUKE ,  IDETA EIJI ,  HIROSE TAKASHI

IPC分类号： F04F1/08 ,  F16K7/14 ,  F16K7/16 ,  F16K25/00 ,  F16K27/00 ,  F16K31/02 ,  F16K47/00 ,  H04B17/00 ,  H04W4/22 ,  H04W48/12 ,  H04W74/08 ,  F16K47/08

CPC分类号： F16K25/005 ,  F16K7/14 ,  F16K7/16 ,  F16K27/00 ,  H04W4/22 ,  H04W48/12 ,  H04W74/006 ,  H04W74/0833 ,  H04W76/007

摘要： It is an object of the present invention to provide at low costs a valve with an integral orifice for use in a gas feeding equipment provided with a pressure-type flow volume control device to be employed for manufacturing of semi-conductors and chemical goods. The valve with an integral orifice has the excellent flow rate control characteristics by improving the processing accuracy of the orifice and preventing the distortion of the orifice at the time of assembling. To realize the objects of the present invention, the main part of the valve with an integral orifice comprises a valve main body made of heat-resisting materials having a gas inflow passage in communication with a valve chamber with an upper open end and a gas outflow passage, a synthetic resin made valve seat body formed in the valve chamber and having a gas outflow passage in communication with the gas outflow passage of the aforementioned valve main body and a valve seat, an orifice disc made of heat-resisting materials removably installed in the gas outflow passage of the valve seat body, and an orifice formed in the orifice disc to reduce the gas outflow passage of the valve seat body; wherein the orifice is formed in the stainless steel made orifice disc in advance and the metal made orifice disc with the orifice formed by a separate processing and the synthetic resin made valve seat body are removably assembled, wherein the orifice disc and the synthetic resin made valve seat body are fixed airtight to the valve main body by pressing the valve seat body via the metal inner disc.

摘要翻译： 本发明的一个目的是提供一种具有整体式孔口的阀，该阀具有用于制造半导体和化学制品的压力式流量控制装置的气体供给设备。 具有整体孔的阀具有优异的流量控制特性，通过提高孔口的加工精度并防止组装时孔口的变形。 为了实现本发明的目的，具有整体孔的阀的主要部分包括由耐热材料制成的阀主体，其具有与具有上开口端的阀室连通的气体流入通道和气体流出 通道，形成在阀室中的合成树脂制成的阀座体，并具有与上述阀主体的气体流出通道连通的气体流出通道和阀座，由可拆卸地安装在其中的耐热材料制成的孔盘 阀座体的气体流出通道和形成在孔板中的孔以减少阀座体的气体流出通道; 其特征在于，所述孔口预先形成在所述不锈钢制孔口盘中，并且所述金属制造的孔板通过单独的处理形成，并且所述合成树脂制成的阀座体可移除地组装，其中所述孔盘和所述合成树脂制成的阀 座椅主体通过经由金属内圆盘按压阀座体而固定在阀主体上。

公开(公告)号：EP0942214A4

公开(公告)日：2002-07-31

申请号：EP97913482

申请日：1997-12-01

申请人： FUJIKIN KK ,  TOHOKU STEEL CO LTD ,  OHMI TADAHIRO ,  TAKAHASHI MIGAKU

发明人： OHMI TADAHIRO ,  TAKAHASHI MIGAKU ,  YAMAJI MICHIO ,  TANIGAWA TAKESHI ,  IKEDA NOBUKAZU ,  DOI RYOSUKE ,  NISHINO KOJI ,  YASUMOTO NAOFUMI ,  FUKUDA HIROYUKI ,  UNO TOMIO ,  YANAI YASUYUKI

IPC分类号： F16K7/14 ,  F16K31/06 ,  F16K31/08

CPC分类号： F16K31/082 ,  F16K7/14 ,  F16K31/0655 ,  F16K31/0672 ,  Y10T137/8242

摘要： A fluid control valve, which can control a fluid having a pressure in the order of 10 kg/cm , has a response time in the order of several milliseconds and can be made small in size, and a fluid supply/exhaust system that provides less gas counterflow in the event of a plurality of valves being used. A fluid control valve of the invention controls a fluid moving (a) in a valve body by closing and opening a portion between a valve seat and a valve holder by means of a drive unit. The drive unit comprises a rod-shaped shaft for application of pressure through the valve seat and the valve holder, and a member (a) fixed around the rod-shaped shaft. The member (a) is made from a magnetic material, and has a space between it and the shaft. A coil provided in parallel to the shaft moves the member (a) up and down by electromagnetic induction, and makes use of a spring force to close and open a portion between the valve seat and the valve holder.

摘要翻译： 能够控制压力为10kg / cm 2左右的流体的流体控制阀具有数毫秒量级的响应时间，并且可以使其尺寸较小，并且流体供给/排出系统 在使用多个阀的情况下提供较少的气体逆流。 本发明的流体控制阀通过借助于驱动单元关闭和打开阀座和阀座之间的部分来控制流体在阀体内移动（a）。 驱动单元包括用于通过阀座和阀座施加压力的杆状轴以及固定在杆状轴周围的构件（a）。 构件（a）由磁性材料制成，并且在其与轴之间具有空间。 与轴平行设置的线圈通过电磁感应使构件（a）上下运动，并且利用弹簧力来关闭和打开阀座与阀座之间的部分。

公开(公告)号：EP0820030A4

公开(公告)日：1999-11-03

申请号：EP96907743

申请日：1996-04-01

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO

IPC分类号： G06G7/26 ,  G06G7/12

CPC分类号： G06G7/26

摘要： A semiconductor operational circuit capable of instantaneously processing in parallel a large quantity of information. The semiconductor operational circuit executes a predetermined operation of a first signal train of signals A1, A2, ..., AN-1, AN comprising N signals and a second signal train of signals B1, B2, ..., BM-1, BM (where N and M are positive integers) comprising M signals. The circuit includes a plurality of first operational circuits for executing a predetermined operation of Ai and Bi+n (where i is a positive integer and n is an integer and 1

摘要翻译： 能够瞬时并行处理大量信息的半导体操作电路。 半导体操作电路执行包括N个信号和信号B1，B2，...，BM-1的第二信号序列的信号A1，A2，...，AN-1，AN的第一信号序列的预定操作， BM（其中N和M是正整数）包含M个信号。 该电路包括用于执行Ai和Bi + n的预定运算的多个第一运算电路（其中i是正整数，并且n是整数且1≤i≤N，1≤i+ n 生成输出信号Ci，n;至少一个第二运算电路，用于生成第一运算电路的一部分或全部输出信号的总和或由总和Sn确定的预定信号Tn 以及第三运算电路，用于找出多个不同的n值的值Sn或Tn，并确定给出Sn或Tn的最大值或最小值的n值。

公开(公告)号：EP0823684A4

公开(公告)日：1998-10-07

申请号：EP96907741

申请日：1996-04-01

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO ,  YU NING MEI ,  NAKAI TSUTOMU

IPC分类号： G06F17/16 ,  G06J1/00 ,  G06K9/64 ,  G06F7/12

CPC分类号： G06K9/64 ,  G06F17/16 ,  G06J1/00

摘要： A semiconductor operational circuit capable of executing an operation of an analog vector at a high speed and highly accurately. The semiconductor operational circuit for executing a predetermined operation of a signal train of N signals A1, A2, ..., Ai, ..., AN. The circuit includes first means for generating an output signal M proportional to the sum of the signal train (A1 + A2 + ..., + Ai + ... + AN), second means for generating an output signal S proportional to the product of the sum by a predetermined weighting constant xi (x1A1 + x2A2 + ... + xiAi + ... + xNAN) and a circuit for calculating at least one fjM - gjS, using L sets of constants (f1, g1), (f2, g2), ..., (fj, gj), ..., (fL, gL) and generating an output signal having logic "1" or "0" in accordance with the results of this calculation.

公开(公告)号：EP0667588A4

公开(公告)日：1998-01-28

申请号：EP93923668

申请日：1993-10-29

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO

IPC分类号： G06F15/18 ,  G06G7/60 ,  G06N3/063 ,  G06N99/00 ,  H01L21/822 ,  H01L27/04 ,  H01L29/78

CPC分类号： G06N3/0635

公开(公告)号：EP0709879A4

公开(公告)日：1997-07-30

申请号：EP94921097

申请日：1994-07-15

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： C23C14/10 ,  C23C14/08 ,  C23C14/24 ,  C30B25/14 ,  H01L21/31 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02252 ,  H01L21/3165 ,  H01L21/31654 ,  H01L21/31658

摘要： A method of manufacturing a semiconductor having higher characteristics, by which an oxide film having extremely high insulating properties can be formed in even a low temperature process. In a step where an oxide film is formed by oxidizing the surface of a semiconductor wafer or a thin metallic film, the oxide film is formed in a plasma of a mixed gas containing inert gas and oxygen gas. Part of the inert gas is contained in the oxide film.

公开(公告)号：EP0692926A4

公开(公告)日：1995-09-18

申请号：EP94904322

申请日：1994-01-14

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： H05H1/00

CPC分类号： H01J37/32935 ,  H05H1/0081

摘要： This instrument can measure parameters of a plasma accurately and easily even though the plasma is excited by a high-frequency. The instrument for measuring parameters of a plasma generated in a vacuum chamber by high-frequency discharge at a given frequency comprises a wire (106) for electrically connecting a first electrode (101) arranged in a space where a plasma is produced and a terminal (110) arranged outside the vacuum chamber for taking out signals, and a first insulator (105) so arranged as to cover at least a part of the surface of the wire therewith. The absolute value of the impedance at the given frequency between the first electrode and the ground when looking into the terminal side from the first electrode is five times or more the absolute value of the impedance at the given frequency between the first electrode and the plasma in a state where no direct current flows through the first electrode.

公开(公告)号：EP0698788A4

公开(公告)日：1995-01-06

申请号：EP92910164

申请日：1992-05-13

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： G01N30/88 ,  G01N7/00 ,  G01N30/06 ,  G01N33/00 ,  G01N30/00

CPC分类号： G01N33/0016 ,  G01N7/00 ,  G01N30/06 ,  G01N33/0036 ,  G01N33/0067

摘要： A method and a device for measuring detailed decomposition rate characteristic of special material gas such as silane gas. After inert gas is supplied from a gas purifier (1) (a first gas-supply source) into a reaction pipe (20) to provide a high purity atmosphere in said pipe, the inside of said pipe is baked by heaters (25 to 27). Then, the inside of the reaction pipe (20) is kept in an atmosphere at a specified temperature and special material gas with a specified purity is supplied from a bomb (10) (a second gas-supply source) into the reaction pipe at a fixed flow rate. When the inside of the reaction pipe (20) reaches a specified terminal temperature, a decomposition rate of the special material gas at said temperature is measured by a gas chromatography (12) by, for example, extracting a part of gas in the reaction pipe. Afterward, a flow rate of the special material gas is successively varied and a decomposition rate at every time of variation is measured. Further, an atmosphere inside the reaction pipe (20) is successively set to one at another specified temperature for measuring a decomposition rate at every temperature. With an impurity concentration in the special gas varied, said measurement is repeated.

公开(公告)号：EP0615790A4

公开(公告)日：1994-12-07

申请号：EP92922998

申请日：1992-11-09

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： B08B3/02 ,  C02F1/04 ,  H01L21/00 ,  H01L21/304 ,  B08B3/00

CPC分类号： H01L21/67057 ,  B08B3/02 ,  B08B2230/01 ,  C02F1/045 ,  H01L21/6704 ,  Y10S210/90

摘要： An object of the present invention is to provide a method of washing a substrate, wherein even traces of impurities in minute and high-aspect-ratio trenches or holes can be washed and removed free from contamination by washing solution and a system and a method for producing ultrapure water, capable of producing ultrasuper pure water for use in the washing. The present invention is characterized in that, at the intermediate portions of a piping (7) for supplying a predetermined ultrapure water to a use point, there are provided: a first steam generating means (1) for heating a first ultrapure water for conversion into a first steam; a steam heating means (3) for further heating the first steam for conversion into a second steam higher in temperature than the first steam; and a cooling means (5) for cooling the second steam for conversion into a second ultrapure water.