摘要:
There is provided a light receiving member which comprises a support and a light receiving layer of multi-layered structure formed thereon, said light receiving layer being composed of an inner layer of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and an outer layer of amorphous material containing silicon atoms and neither germanium atoms nor tin atoms, said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively and significantly prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.
摘要:
There is provided a light receiving member which comprises a support, a photosensitive layer and a surface layer, said photosensitive layer being composed of amorphous material containing silicon atoms, and at least either germanium atoms or tin atoms and said surface layer being composed of amorphous material containing silicon atoms and at least one kind selected from oxygen atoms, carbon atoms and nitrogen atoms, said supporthaving a surface provided with irregularities composed of spherical dimples, and an optical band gap being matched at the interface between said photosensitive layer and said surface layer. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.
摘要:
A substrate for light-receiving members has a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other.
摘要:
A photoreceptor is described comprising a photoconductive layer composed of hydrogenated and/or fluorinated amorphous silicon, a surface modifying layer formed on said photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide, and a charge transport layer formed below said photoconductive layer and composed of hydrogenated and/or fluorinated silicon carbide, wherein the thickness «t» of said surface modifying layer is selected in a range 400 A ≦ t
摘要:
An electrophotographic member has a support (1) and a photoconductor layer (2) on the support formed mainly of amorphous silicon. Improved characteristics of the layer (2) are obtained when the amorphous silicon contains on average at least 50 atomic-% silicon and at least 1 atomic-% hydrogen and a surface part (23, 25) at least 10 nm thick extending from a surface of the layer toward its interior has a hydrogen content of 1 to 40 atomic-% an optical forbidden band gap of 1.3 to 2.5 eV and an infrared absorption spectrum in which the intensity of at least one of the peaks centered approximately at wave numbers 2,200 cm -1 , 1,140 cm -1 , 1,040 cm -1 , 650 cm -1 , 860 cm- 1 and 800 cm -1 and attributed silicon-oxygen bonds does not exceed 20% of the intensity of the higher of the peaks centered at approximately wave numbers 2,000 cm-1 and 2,100 cm -1 and attributed silicon-hydrogen bonds. Dark decay characteristics are good, and a satisfactory surface potential can be achieved. In addition, the characteristics of the member are stable with time.
摘要:
The present invention provides an electrophotographic photosensitive member having an a-SiC upper charge injection inhibition layer and an a-SiC surface layer, which is superior in adhesiveness, suppresses the surface deterioration, is superior in sensitivity characteristics and charging characteristics, and can keep an adequate image-forming capability for a long period of time. The upper charge injection inhibition layer contains 10 atom ppm or more and 30,000 atom ppm or less of the Group 13 atoms or the Group 15 atoms of the Periodic Table with respect to silicon atoms in the upper charge injection inhibition layer, and the ratio (C/(Si+C)) of the number of carbon atoms in the upper charge injection inhibition layer with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the upper charge injection inhibition layer is 0.10 or more and 0.60 or less; and the sum of the atom density of the silicon atoms and the atom density of the carbon atoms in the surface layer is 6.60 1022 atoms/cm3 or more, and the ratio (C/(Si+C)) of the number of carbon atoms with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less.