Light receiving members
    81.
    发明公开
    Light receiving members 失效
    光接收会员

    公开(公告)号:EP0223448A3

    公开(公告)日:1987-08-26

    申请号:EP86308376

    申请日:1986-10-28

    IPC分类号: G03G05/082 G03G05/10

    摘要: There is provided a light receiving member which comprises a support and a light receiving layer of multi-layered structure formed thereon, said light receiving layer being composed of an inner layer of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and an outer layer of amorphous material containing silicon atoms and neither germanium atoms nor tin atoms, said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively and significantly prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.

    Light receiving members
    82.
    发明公开
    Light receiving members 失效
    光接收部件

    公开(公告)号:EP0219353A3

    公开(公告)日:1987-08-26

    申请号:EP86307996

    申请日:1986-10-16

    IPC分类号: G03G05/082 G03G05/10

    摘要: There is provided a light receiving member which comprises a support, a photosensitive layer and a surface layer, said photosensitive layer being composed of amorphous material containing silicon atoms, and at least either germanium atoms or tin atoms and said surface layer being composed of amorphous material containing silicon atoms and at least one kind selected from oxygen atoms, carbon atoms and nitrogen atoms, said supporthaving a surface provided with irregularities composed of spherical dimples, and an optical band gap being matched at the interface between said photosensitive layer and said surface layer. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.

    摘要翻译: 提供了一种光接收元件,它包括一个支持体,一个光敏层和一个表面层,所述光敏层由含有硅原子的无定形材料和至少锗原子或锡原子组成,所述表面层由无定形材料 含有硅原子和选自氧原子,碳原子和氮原子中的至少一种,所述载体具有由球形凹坑构成的具有凹凸的表面和在所述感光层与所述表面层之间的界面处匹配的光学带隙。 光接收元件克服了包括由非晶硅构成的光接收层的常规光接收元件中的所有问题,并且特别是有效地防止了由于干涉现象而在所形成的图像中出现干涉条纹,由此形成可见图像 即使在使用可能产生干涉的相干激光束作为光源的情况下也具有优良的质量。

    Electrophotographic member and electrophotographic apparatus including the member
    85.
    发明公开
    Electrophotographic member and electrophotographic apparatus including the member 失效
    元素和电子照相术仪器,电子元器件。

    公开(公告)号:EP0045204A2

    公开(公告)日:1982-02-03

    申请号:EP81303422.0

    申请日:1981-07-24

    申请人: Hitachi, Ltd.

    IPC分类号: G03G5/082

    摘要: An electrophotographic member has a support (1) and a photoconductor layer (2) on the support formed mainly of amorphous silicon. Improved characteristics of the layer (2) are obtained when the amorphous silicon contains on average at least 50 atomic-% silicon and at least 1 atomic-% hydrogen and a surface part (23, 25) at least 10 nm thick extending from a surface of the layer toward its interior has a hydrogen content of 1 to 40 atomic-% an optical forbidden band gap of 1.3 to 2.5 eV and an infrared absorption spectrum in which the intensity of at least one of the peaks centered approximately at wave numbers 2,200 cm -1 , 1,140 cm -1 , 1,040 cm -1 , 650 cm -1 , 860 cm- 1 and 800 cm -1 and attributed silicon-oxygen bonds does not exceed 20% of the intensity of the higher of the peaks centered at approximately wave numbers 2,000 cm-1 and 2,100 cm -1 and attributed silicon-hydrogen bonds. Dark decay characteristics are good, and a satisfactory surface potential can be achieved. In addition, the characteristics of the member are stable with time.

    摘要翻译: 电子照相构件在主要由非晶硅形成的支撑件上具有支撑体(1)和感光体层(2)。 当非晶硅平均含有至少50原子%的硅和至少1原子%的氢以及从表面延伸至少10nm厚的表面部分(23,25)时,获得了层(2)的改进的特性。 的层向其内部具有1至40原子%的氢含量为1.3至2.5eV的光学禁止带隙和其中至少一个峰值的强度以波数2,200厘米为中心的红外吸收光谱 1,040厘米<1>,650厘米<1>,860厘米-1和800厘米-1 <1> 并且归因于硅 - 氧键不超过集中在近似波数2,000厘米-1和2,100厘米-1的峰的较高峰的强度的20%,并归因于硅 - 氢键。 黑暗衰变特性良好,可达到令人满意的表面电位。 此外,会员的特点随着时间的推移是稳定的。

    ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS
    87.
    发明公开
    ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 审中-公开
    电子照相感光元件和电子照相设备

    公开(公告)号:EP2519860A1

    公开(公告)日:2012-11-07

    申请号:EP10840935.0

    申请日:2010-12-16

    IPC分类号: G03G5/08

    CPC分类号: G03G5/08235 G03G5/08214

    摘要: The present invention provides an electrophotographic photosensitive member having an a-SiC upper charge injection inhibition layer and an a-SiC surface layer, which is superior in adhesiveness, suppresses the surface deterioration, is superior in sensitivity characteristics and charging characteristics, and can keep an adequate image-forming capability for a long period of time. The upper charge injection inhibition layer contains 10 atom ppm or more and 30,000 atom ppm or less of the Group 13 atoms or the Group 15 atoms of the Periodic Table with respect to silicon atoms in the upper charge injection inhibition layer, and the ratio (C/(Si+C)) of the number of carbon atoms in the upper charge injection inhibition layer with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the upper charge injection inhibition layer is 0.10 or more and 0.60 or less; and the sum of the atom density of the silicon atoms and the atom density of the carbon atoms in the surface layer is 6.60 1022 atoms/cm3 or more, and the ratio (C/(Si+C)) of the number of carbon atoms with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less.

    摘要翻译: 本发明提供具有a-SiC上电荷注入阻挡层和a-SiC表面层的电子照相感光构件,其具有优异的粘附性,抑制表面劣化,灵敏度特性和充电特性优异,并且可以保持 足够长时间的图像形成能力。 相对于上部电荷注入阻挡层中的硅原子,上部电荷注入阻挡层包含10原子ppm或更多且30,000原子ppm或更少的13族原子或元素周期表15族原子,并且比例(C 相对于上部电荷注入阻挡层中的硅原子数和碳原子数的总和,上部电荷注入阻挡层中的碳原子数量/((Si + C))为0.10以上且 0.60以下; 并且表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm3以上,碳原子数的比例(C /(Si + C))为 相对于表面层中的硅原子数和碳原子数的总和为0.61以上且0.75以下。