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    THIN FILM SOLAR CELL MODULE
    2.
    发明公开
    THIN FILM SOLAR CELL MODULE 审中-公开
    薄膜太阳能电池模块

    公开(公告)号：EP2993702A3

    公开(公告)日：2016-06-01

    申请号：EP15002834.8

    申请日：2012-07-31

    申请人： LG Electronics, Inc.

    发明人： HWANG, Suntae ,  YOU, Dongjoo ,  LEE, Sungeun ,  LEE, Seungyoon

    IPC分类号： H01L31/042 ,  H01L31/075 ,  H01L31/18 ,  H01L31/076 ,  H01L31/0352 ,  H01L31/046

    CPC分类号： H01L31/1804 ,  H01L31/0352 ,  H01L31/03765 ,  H01L31/046 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A thin film solar cell module includes a substrate, at least one first cell positioned in a central area of the substrate, and at least one second cell positioned in an edge area of the substrate. Each of the first and second cells includes a first electrode, a second electrode, and at least one photoelectric conversion unit positioned between the first electrode and the second electrode. An amount of germanium contained in the photoelectric conversion unit of the first cell is less than an amount of germanium contained in the photoelectric conversion unit of the second cell positioned on the same level layer as the photoelectric conversion unit of the first cell.

    摘要翻译： 薄膜太阳能电池模块包括基板，位于基板的中心区域中的至少一个第一单元以及位于基板的边缘区域中的至少一个第二单元。 第一和第二单元中的每一个包括第一电极，第二电极以及位于第一电极和第二电极之间的至少一个光电转换单元。 包含在第一单元的光电转换单元中的锗的量小于包含在与第一单元的光电转换单元位于相同层级上的第二单元的光电转换单元中的锗的量。

    Thin film solar cell module
    4.
    发明公开
    Thin film solar cell module 审中-公开
    薄膜太阳能电池组件

    公开(公告)号：EP2579334A2

    公开(公告)日：2013-04-10

    申请号：EP12005570.2

    申请日：2012-07-31

    申请人： LG Electronics Inc.

    发明人： Hwang, Suntae ,  You, Dongjoo ,  Lee, Sungeun ,  Lee, Seungyoon

    IPC分类号： H01L31/042 ,  H01L31/075 ,  H01L31/18 ,  H01L31/076

    CPC分类号： H01L31/1804 ,  H01L31/0352 ,  H01L31/03765 ,  H01L31/046 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A thin film solar cell module includes a substrate, at least one first cell positioned in a central area of the substrate, and at least one second cell positioned in an edge area of the substrate. Each of the first and second cells includes a first electrode, a second electrode, and at least one photoelectric conversion unit positioned between the first electrode and the second electrode. An amount of germanium contained in the photoelectric conversion unit of the first cell is less than an amount of germanium contained in the photoelectric conversion unit of the second cell positioned on the same level layer as the photoelectric conversion unit of the first cell.

    摘要翻译： 薄膜太阳能电池模块包括基板，位于基板的中心区域中的至少一个第一单元以及位于基板的边缘区域中的至少一个第二单元。 第一和第二单元中的每一个包括第一电极，第二电极以及位于第一电极和第二电极之间的至少一个光电转换单元。 包含在第一单元的光电转换单元中的锗的量小于包含在与第一单元的光电转换单元位于相同层级上的第二单元的光电转换单元中的锗的量。

    Semiconductor device and manufacturing method thereof
    5.
    发明公开
    Semiconductor device and manufacturing method thereof 审中-公开
    半导体装置及其制造方法

    公开(公告)号：EP1113505A3

    公开(公告)日：2004-01-21

    申请号：EP00128279.7

    申请日：2000-12-22

    申请人： Sanyo Electric Co., Ltd.

    发明人： Sakata, Hitoshi, c/o Sanyo Electric Co., Ltd. ,  Kadonaga, Yasuo, c/o Sanyo Electric Co., Ltd.

    IPC分类号： H01L31/20 ,  H01L31/0236 ,  H01L31/072

    CPC分类号： H01L31/0745 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

    摘要： This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode (5) by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer (2). The i-type amorphous semiconductor layer (2) substantially does not contain impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate (1) with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode (5) is formed on the p-type amorphous semiconductor thin film.

    摘要翻译： 本发明提供一种高效率的光伏半导体器件，其通过消除由向i型非晶半导体掺杂杂质而形成的等离子体掺杂层的等离子体引起的损伤，能够保持非晶半导体层和透明电极（5）的良好界面特性 层（2）。 i型非晶半导体层（2）实质上不含用于降低n型单晶衬底的纹理表面上的电阻的杂质。 然后，通过在形成有非晶半导体层的n型单晶衬底（1）暴露于含有p型杂质的激发气体的气氛中并将该杂质扩散到非晶半导体层，形成等离子体掺杂层。 通过化学气相沉积在等离子体掺杂层上形成含有p型杂质的p型非晶半导体薄膜层，并且在p型非晶半导体薄膜上形成透明电极（5）。

    Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
    8.
    发明公开
    Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device 失效
    一种用于制造光电器件的非单晶半导体薄膜及其制造方法的一个非单晶半导体薄膜的制造方法

    公开(公告)号：EP0849811A3

    公开(公告)日：2000-05-24

    申请号：EP97122196.5

    申请日：1997-12-16

    申请人： CANON KABUSHIKI KAISHA

    发明人： Hori, Tadashi ,  Okabe, Shotaro ,  Sakai, Akira ,  Kohda, Yuzo ,  Yajima, Takahiro

    IPC分类号： H01L31/20 ,  H01L31/075 ,  H01L21/205 ,  C23C16/24

    CPC分类号： C23C16/545 ,  C23C14/562 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S438/907

    摘要： Provided are an apparatus of forming a non-single-crystal semiconductor thin film comprising a film deposition chamber having a film-forming space surrounded by a film deposition chamber wall and a beltlike substrate, and an external chamber surrounding the deposition chamber wall, wherein while the beltlike substrate is moved in a longitudinal direction thereof, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma therein, thereby forming a non-single-crystal semiconductor thin film on a surface of the beltlike substrate, and wherein a cooling mechanism and a temperature-increasing mechanism are provided such that the mechanisms cover a part of an outside surface of the deposition chamber wall, and wherein the gas supply device comprises a gas manifold, the gas manifold being provided apart from the deposition chamber wall, and methods of forming a non-single-crystal semiconductor thin film using the above forming apparatus and methods of producing a photovoltaic device by using the methods of forming the thin film. These permit a non-single-crystal semiconductor thin film to be formed across a large area on the substrate and with high quality and excellent uniformity.

    摘要翻译： 本发明提供在形成非单晶半导体薄膜，其含有具有由膜沉积室的壁和一个带状基板包围的成膜空间的成膜室的装置，以及以包围所述成膜室的壁的外部腔室，worin而 带状基片在其纵向方向上，膜形成气体通过气体供给装置到所述成膜空间和微波能量引入从微波施加到成膜空间辐射移动，以在其中感应出的微波等离子体 ，由此将带状的基材的表面上形成非单晶半导体薄膜，和worin的冷却机构和温度增大机构设置检查那样的机制覆盖沉积腔室壁的外表面的一部分， 到形成非单晶半导体薄膜，其含有具有成膜空间surroun一个膜沉积室的设备 通过一个膜沉积室的壁和一个带状基材，并围绕所述沉积腔室的壁，worin而带状衬底被在其纵向方向上，膜形成气体通过气体供给装置引入膜移动外室DED - 形成的空间和等离子体在膜形成空间诱导，从而形成带状的基板的表面上的非单晶半导体薄膜，和worin气体供给装置包括一气体歧管，被设置在气体歧管 除了从沉积室的壁，形成使用上述成形装置和通过使用形成薄膜的方法的制造光电器件的方法的非单晶半导体薄膜的方法。 这些允许非单晶半导体薄膜在大区域内形成在衬底上并以高品质和良好的均匀性。

    Photovoltaic element and method of and apparatus for manufacturing the same
    9.
    发明公开
    Photovoltaic element and method of and apparatus for manufacturing the same 失效
    Photovoltaisches Bauelement und Verfahren zur Herstellung desselben

    公开(公告)号：EP0828301A2

    公开(公告)日：1998-03-11

    申请号：EP97115342.4

    申请日：1997-09-04

    申请人： CANON KABUSHIKI KAISHA

    发明人： Okabe, Shotaro ,  Fujioka, Yasushi ,  Kanai, Masahiro ,  Sakai, Akira ,  Sawayama, Tadashi ,  Kohda, Yuzo ,  Hori, Tadashi ,  Yajima, Takahiro

    IPC分类号： H01L31/075 ,  H01L31/20 ,  H01L31/052

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

    摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。