公开(公告)号：EP1276138A3

公开(公告)日：2005-12-14

申请号：EP01121849.2

申请日：2001-09-11

申请人： S.E.S. Company Limited

发明人： Shibagaki, Kizoh, c/o S.E.S. Co., Ltd.

IPC分类号： H01L21/00

CPC分类号： H01L21/6708 ,  H01L21/67051 ,  Y10S134/902

摘要： A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

摘要翻译： 一种单晶片式湿式清洗装置，用于当其背面被化学流体湿式清洗时，有效地防止化学流体流向晶片的背面，其中净化水被注入并供应到晶片的背面，同时 多个化学流体从上方顺序地供给到可旋转地支撑的晶片上，使得净化水清洁晶片的背面，并有效地防止化学流体流向晶片的背面。

公开(公告)号：EP1263022A1

公开(公告)日：2002-12-04

申请号：EP01113291.7

申请日：2001-05-31

申请人： S.E.S. Company Limited

发明人： Ohkura, Ryoichi ,  Ono, Yuji ,  Yamaguchi, Hiroshi ,  Takaishi, Miyuki ,  Kamikochi, Hideo

IPC分类号： H01L21/00

CPC分类号： H01L21/67196 ,  H01L21/67017 ,  H01L21/67766 ,  H01L21/67781 ,  Y10S134/902

摘要： There is provided a substrate cleaning system which is capable of cleaning wafers W in a high cleanliness atmosphere with high accuracy taking an advantage of a sheet-type wet cleaning treatment, and which is simple and compact in construction, and is excellent in cost performance. The system comprises a system body 1 capable of being sealed, a loading/unloading booth A comprising a substrate carry-in section Aa in which a plurality of substrates are stocked and standby to be carried in before cleaning treatment is applied to them and a substrate carry-out section Ab in which a plurality of substrates are stocked and standby to be carried out after cleaning treatment is applied to them, a processing booth C provided with at least one sheet-type substrate cleaning chamber 10 in the cleaning treatment can be applied to a plurality of substrates by a plurality of cleaning solutions, and a robot booth B provided with a transport robot for transporting the substrates one by one between the processing booth C and the loading/unloading booth A, wherein the respective booths are partitioned by partition walls each having a required minimum cross sectional area.

摘要翻译： 本发明提供一种基板清洗系统，其能够利用片式湿式清洗处理，以高精度清洁高洁净度的气氛中的晶片W，其结构简单，结构紧凑，成本性能优异。 该系统包括能够被密封的系统主体1，装载/卸载舱A包括基板搬入部分Aa，其中多个基板被备存并备用以在其施加清洁处理之前被携带，并且基板 在清洁处理之后，多个基板被放置待机待机的执行部分Ab被施加到清洁处理中的设置有至少一个片状基板清洁室10的处理室C可以被应用 通过多个清洁溶液到多个基板，以及设置有运送机器人的机器人展位B，用于在处理室C和装载/卸载间A之间逐一运送基板，其中相应的间隔被分隔开 墙壁各自具有所需的最小横截面面积。

公开(公告)号：EP2072643A1

公开(公告)日：2009-06-24

申请号：EP07828300.9

申请日：2007-09-21

申请人： S.E.S. Company Limited ,  Miyata, Seizo

发明人： MIYATA, Seizo ,  SHIMIZU, Tetsuyac/o S.E.S. CO., LTD. Research ,  TAJIMA, Hisayoshic/o S.E.S. CO., LTD. ,  SONE, Masato

IPC分类号： C25D5/00 ,  C25D7/12

CPC分类号： C25D15/02 ,  C25D3/38 ,  C25D5/003 ,  H01L21/2885 ,  H01L21/76877

摘要： The surface of a metal base is electroplated by utilizing an induction codeposition phenomenon using at least one of carbon dioxide and inert gas, an electroplating liquid containing a metal powder dispersed therein, and a surfactant in a supercritical state or a subcritical state. The concentration of the metal in the electroplating liquid is in a saturated or supersaturated state. Accordingly, the dissolution speed of the metal base can be suppressed, and, at the same time, a plating layer having a smooth surface can be formed in a short time by utilizing an induction codeposition phenomenon. The electroplating method can be applied even when the metal base is formed of a metallic thin film provided on a surface of an insulating film provided on the substrate, or even when the metal is copper, zinc, iron, nickel, or cobalt. The above constitution can provide an electroplating method which, in electroplating on the surface of a metal base, can prevent the dissolution of the metal base to realize normal electroplating even in the case of a very thin metal base.

摘要翻译： 通过使用二氧化碳和惰性气体中的至少一种的感应共沉积现象，其中分散有金属粉末的电镀液体和处于超临界状态或亚临界状态的表面活性剂来电镀金属基底的表面。 电镀液中金属的浓度处于饱和或过饱和状态。 因此，通过利用感应共沉积现象，可以抑制金属基体的溶解速度，并且同时可以在短时间内形成具有光滑表面的镀层。 即使当金属基底由提供在设置在基底上的绝缘膜的表面上的金属薄膜形成时，或者甚至当金属是铜，锌，铁，镍或钴时，也可以应用电镀法。 上述结构可以提供一种电镀方法，该方法在金属基体表面进行电镀时，即使在非常薄的金属基体的情况下，也能够防止金属基体的溶解，从而实现正常的电镀。

公开(公告)号：EP2067880A1

公开(公告)日：2009-06-10

申请号：EP07830426.8

申请日：2007-10-24

申请人： S.E.S. Company Limited ,  Miyata, Seizo

发明人： MIYATA, Seizo ,  SHIMIZU, Tetsuya ,  TAJIMA, Hisayoshi ,  SONE, Masato

IPC分类号： C23C18/31 ,  H01L21/288

CPC分类号： C23C18/00 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

摘要： This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid. According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 &mgr;m, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element. The above constitution can provide an electroless plating method which can realize the formation of an even film by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon.

摘要翻译： 本发明提供了一种化学镀方法，其包括使金属粉末分散在无电镀液中的状态下使用超临界流体或亚临界流体对金属基体样品的表面进行无电镀。 根据该方法，通过利用感应共析现象，在短时间内形成均匀且厚的镀层。 在化学镀方法中，金属粉末的平均粒径可以不小于1nm且不大于100μm，并且化学镀方法也可以应用于镶嵌工艺或双镶嵌工艺，其是 在半导体元件内形成精细金属布线的方法。 上述结构可以提供一种化学镀方法，其可以通过利用诱导共析现象利用亚临界流体或超临界流体在短时间内通过化学镀来实现均匀的膜的形成。

公开(公告)号：EP1215715A3

公开(公告)日：2006-06-28

申请号：EP01120274.4

申请日：2001-08-23

申请人： S.E.S. Company Limited

发明人： Ogasawara, Kazuhisa ,  Nakatsukasa, Katsuyoshi ,  Shoumori, Hirofumi ,  Otokuni, Kenji ,  Watanabe, Kazutoshi ,  Takahashi, Hiroki

IPC分类号： H01L21/00 ,  B08B3/00

CPC分类号： H01L21/67057 ,  H01L21/6704 ,  Y10S134/902

摘要： A substrate processing unit 10 capable of restraining contaminants such as particles, watermarks and the like from being adhered to a substrate such as a semiconductor wafer and the like, wherein the substrate processing unit 10 comprises a processing bath 11 for accommodating the substrates (e.g., wafer W) to be processed, a processing fluid introduction pipe 21 for supplying processing fluid (e.g., purified water J) to the processing bath 11, a vapor generating bath 61 for accommodating an organic solvent S (e.g., IPA fluid), a processing fluid discharge section 30 for discharging processing fluid from the processing bath 11, and a solvent heating unit 62 for heating the organic solvent S inside the vapor generating bath 61, wherein the vapor generating bath 61 introduces vapor generated from the organic solvent S to the inside of the processing bath 11, and the solvent heating unit 62 heats the organic solvent S inside the vapor generating bath 61 at a temperature in the range of 50°C±5°C if a surface of the wafer W is hydrophobic and heats the organic solvent S at a temperature in the range of 70°C±5°C if the surface of the wafer W is hydrophilic.

公开(公告)号：EP1263022B1

公开(公告)日：2007-04-25

申请号：EP01113291.7

申请日：2001-05-31

申请人： S.E.S. Company Limited

发明人： Ohkura, Ryoichi ,  Ono, Yuji ,  Yamaguchi, Hiroshi ,  Takaishi, Miyuki ,  Kamikochi, Hideo

IPC分类号： H01L21/00

CPC分类号： H01L21/67196 ,  H01L21/67017 ,  H01L21/67766 ,  H01L21/67781 ,  Y10S134/902

公开(公告)号：EP1213746A3

公开(公告)日：2006-04-05

申请号：EP01120516.8

申请日：2001-08-28

申请人： S.E.S. Company Limited

发明人： Ono, Yuji ,  Ohkura, Ryoichi

IPC分类号： H01L21/00

CPC分类号： H01L21/681 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： In the drying step of the single wafer type substrate cleaning system for cleaning wafers not stored in a cassette, in a sealed cleaning housing, a spin drying treatment is applied to the wafer when the wafer is supported and rotated at high speed while an inert gas for preventing oxidation is supplied to the face of the wafer, and the amount of the inert gas to be supplied to the face of the wafer is larger at the outer peripheral portion of the wafer than that supplied at the center thereof, thereby preventing oxidation on the face of the wafer effectively while optimizing the benefits of the single wafer type cleaning system.

公开(公告)号：EP1641032A1

公开(公告)日：2006-03-29

申请号：EP03776030.3

申请日：2003-12-02

申请人： S.E.S. Company Limited

发明人： Nakatsukasa, Katsuyoshi, c/o S.E.S.Co., Ltd. ,  Ogasawara, Kazuhisa, c/o S.E.S.Co., Ltd. ,  Sakaihara, Yoshiaki, c/o S.E.S.Co., Ltd. ,  Haruki, Yoshihiro, c/o S.E.S.Co., Ltd. ,  Kawate, Munenori, c/o S.E.S.Co., Ltd.

IPC分类号： H01L21/304

CPC分类号： H01L21/67034 ,  H01L21/67028

摘要： A processing tank 10 is divided into a washing section 15 and a drying section 30, a clearance is formed in the joint between the sections, and the clearance is communicated with by sink 29. In drying a substrate, the substrate is moved from the washing section to the drying section, a porous plate 28 is inserted into the lower region where the clearance is formed, and a drying gas is jetted against the substrate with the internal pressure of the drying section 30 kept higher than that of the sink 29 and the internal pressure of the washing section 15 kept lower than that of the drying section 30. In this case, it is preferable that the porous plate 28 is a punched plate in which plural small holes having predetermined diameters have been made. The above configuration provides a substrate processing method and a substrate processing device in which the drying gas can uniformly and stably be supplied to an assembly of plural substrates.

摘要翻译： 处理槽10被分成洗涤部分15和干燥部分30，在部分之间的接合处形成间隙，并且通过槽29连通间隙。在干燥基板时，将基板从洗涤物 将多孔板28插入到形成有间隙的下部区域中，并且干燥气体在干燥部30的内部压力保持高于水槽29的内部压力的情况下喷射到基板上，并且 洗涤部15的内部压力保持低于干燥部30的内压。在这种情况下，多孔板28优选为具有规定直径的多个小孔的冲孔板。 上述结构提供了一种基板处理方法和基板处理装置，其中干燥气体可以均匀且稳定地提供给多个基板的组件。

公开(公告)号：EP1276138A2

公开(公告)日：2003-01-15

申请号：EP01121849.2

申请日：2001-09-11

申请人： S.E.S. Company Limited

发明人： Shibagaki, Kizoh, c/o S.E.S. Co., Ltd.

IPC分类号： H01L21/00

CPC分类号： H01L21/6708 ,  H01L21/67051 ,  Y10S134/902

摘要： A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.

公开(公告)号：EP1215715A2

公开(公告)日：2002-06-19

申请号：EP01120274.4

申请日：2001-08-23

申请人： S.E.S. Company Limited

发明人： Ogasawara, Kazuhisa ,  Nakatsukasa, Katsuyoshi ,  Shoumori, Hirofumi ,  Otokuni, Kenji ,  Watanabe, Kazutoshi ,  Takahashi, Hiroki

IPC分类号： H01L21/00

CPC分类号： H01L21/67057 ,  H01L21/6704 ,  Y10S134/902

摘要： A substrate processing unit 10 capable of restraining contaminants such as particles, watermarks and the like from being adhered to a substrate such as a semiconductor wafer and the like, wherein the substrate processing unit 10 comprises a processing bath 11 for accommodating the substrates (e.g., wafer W) to be processed, a processing fluid introduction pipe 21 for supplying processing fluid (e.g., purified water J) to the processing bath 11, a vapor generating bath 61 for accommodating an organic solvent S (e.g., IPA fluid), a processing fluid discharge section 30 for discharging processing fluid from the processing bath 11, and a solvent heating unit 62 for heating the organic solvent S inside the vapor generating bath 61, wherein the vapor generating bath 61 introduces vapor generated from the organic solvent S to the inside of the processing bath 11, and the solvent heating unit 62 heats the organic solvent S inside the vapor generating bath 61 at a temperature in the range of 50°C±5°C if a surface of the wafer W is hydrophobic and heats the organic solvent S at a temperature in the range of 70°C±5°C if the surface of the wafer W is hydrophilic.

摘要翻译： 能够将诸如颗粒，水印等的污染物粘附到诸如半导体晶片等的基板上的基板处理单元10，其中基板处理单元10包括用于容纳基板的处理槽11（例如， 晶片W），用于将处理流体（例如，净化水J）供给到处理槽11的处理流体导入管21，用于容纳有机溶剂S（例如IPA流体）的蒸气发生浴61，处理 用于从处理槽11排出处理流体的流体排出部分30和用于加热蒸汽发生浴61内部的有机溶剂S的溶剂加热单元62，其中蒸气产生浴61将由有机溶剂S产生的蒸汽引入到内部 的处理槽11，溶剂加热单元62将蒸发发生浴61内的有机溶剂S加热到50℃ 如果晶片W的表面是疏水性的，则如果晶片W的表面是亲水的，则在70℃±5℃的温度下加热有机溶剂S。