摘要:
Embodiments of the invention may provide a system for the production of photovoltaic modules that comprises at least a first work line having a plurality of positioning stations in which a series of first processing operations are performed and a second work line consisting of at least a positioning station in which at least a second processing operation is performed. The process sequence may include, for example, printing a layer material used to form one or more electric contacts on a base layer, and then positioning photovoltaic cells and various layers of insulating material in a desired orientation over the base layer to form a photovoltaic module.
摘要:
A coating can be provided on a substrate. Fabrication of the coating can include forming a solid layer in a specified region of the substrate while supporting the substrate in a coating system using a gas cushion. For example, a liquid coating can be printed over the specified region while the substrate is supported by the gas cushion. The substrate can be held for a specified duration after the printing the patterned liquid. The substrate can be conveyed to a treatment zone while supported using the gas cushion. The liquid coating can be treated to provide the solid layer including continuing to support the substrate using the gas cushion.
摘要:
A processing apparatus comprising a plurality of process unit groups (G1 to G5) each including a plurality of process units to subject an object (w) to a series of processes, said process units being arranged vertically in multiple stages, an object transfer space (22) being defined among the process unit groups (G1 to G5); transfer means (21) for transferring the object (w), said transfer means (21) having a transfer member (73, 78a, 78b, 78c) vertically movable in the object transfer space (22), said transfer member (73, 78a, 78b, 78c) being capable of transferring the object (w) to each of said process units; and means (20b, 50 to 62, 84, 95, 95a, 96, 114, 114a, 115, 115a) for reducing a variation in condition of the object transfer space (22), the processing apparatus further comprising at least one first process unit group (G1, G2) in which process units including a resist coating unit for coating a resist and a developing unit for developing a pattern of the resist are vertically stacked; and at least one second process unit group (G3, G4, G5) in which at least one or all of an alignment unit for aligning an object to be processed, a baking unit for baking the object, a cooling unit for cooling the object, an adhesion unit for subjecting the object to an adhesion process, and an extension unit are vertically stacked, wherein said first process unit group (G1, G2) has such an arrangement that the coating unit is placed below the developing unit.
摘要:
Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or precleaning steps are utilized to reduce the effect of queue time on device yield. In one aspect of the invention, a system controller and the one or more analysis chambers are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.
摘要:
There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber (32) along the sides of processing chambers (31) for feeding substrates into a controlled atmosphere through a load lock (35) and then along a transport chamber (32) as a way of reaching processing chambers (31) and then out of the controlled atmosphere following processing in the processing chambers (31).
摘要:
In a processing apparatus (9-16) including a diaphragm valve (41) provided on a process gas discharge line (31) for discharging a process gas from a processing chamber (24) and configured to control the internal pressure of the processing chamber (24) by adjusting the opening of the diaphragm valve (41), an antistatic agent source (43) is connected to the process gas discharge line (31) at a position upstream of the diaphragm valve (41). Damage of a diaphragm valve element (68) due to spark discharge resulted from electric charge generated by friction between the gas flowing through the diaphragm valve (41) and the diaphragm valve element (68) can be prevented.