公开(公告)号：EP3447607B1

公开(公告)日：2021-05-12

申请号：EP18189266.2

申请日：2018-08-16

发明人： Margetts, Julien ,  Jeong, Hyoun Kwon ,  Kim, Jonghyeon

IPC分类号： G06F1/3225 ,  G06F1/3234 ,  G06F1/329 ,  G06F13/16 ,  G06F13/20 ,  G06F13/40

公开(公告)号：EP3046109B1

公开(公告)日：2020-10-28

申请号：EP14844547.1

申请日：2014-08-22

申请人： Toshiba Memory Corporation

发明人： YOSHIHARA, Masahiro ,  ABIKO, Naofumi

IPC分类号： G11C16/06 ,  G11C16/02 ,  G11C16/04

公开(公告)号：EP2684136B1

公开(公告)日：2020-04-08

申请号：EP11860316.6

申请日：2011-09-26

申请人： Toshiba Memory Corporation

发明人： HASHIMOTO, Daisuke

IPC分类号： G06F3/06 ,  G06F12/02 ,  G06F12/0804 ,  G06F12/0868 ,  G11C11/56 ,  G11C16/04

公开(公告)号：EP2356571B1

公开(公告)日：2020-01-22

申请号：EP09831999.9

申请日：2009-12-11

申请人： TOSHIBA MEMORY CORPORATION

发明人： FUJIMOTO, Akihisa

IPC分类号： G06F12/02 ,  G06K19/07

公开(公告)号：EP2862050B1

公开(公告)日：2019-10-16

申请号：EP13719185.4

申请日：2013-03-25

申请人： Toshiba Memory Corporation

发明人： HASHIMOTO, Daisuke

IPC分类号： G06F3/06 ,  G06F11/14 ,  G06F12/00 ,  G06F12/02

公开(公告)号：EP3495955A3

公开(公告)日：2019-07-10

申请号：EP18189925.3

申请日：2018-08-21

申请人： Toshiba Memory Corporation

发明人： Margetts, Julien

IPC分类号： G06F11/10

摘要： A data storage device comprises a nonvolatile semiconductor storage array containing data, a controller in communication with the nonvolatile semiconductor storage array, and a buffer containing RAID units, the RAID units being in communication with the nonvolatile semiconductor storage array via the controller. The controller is configured to receive write requests from a host device, and accumulate first data relating to the write requests in the RAID units. The controller is also configured to, concurrently, transfer the first data contained in the RAID units to the nonvolatile semiconductor storage array, calculate parity values of the first data contained in the RAID units, each parity value relating to each write request, and accumulate the parity values in a context identifier buffer. The controller is further configured to associate context identifiers with the parity values, and store the parity values and the context identifiers in the nonvolatile semiconductor storage array.

公开(公告)号：EP2702721B1

公开(公告)日：2019-06-26

申请号：EP12775943.9

申请日：2012-03-22

申请人： TOSHIBA MEMORY CORPORATION

发明人： KATO, Taku ,  NAGAI, Yuji ,  MATSUSHITA, Tatsuyuki

IPC分类号： H04L9/08 ,  H04L9/32 ,  G06F21/10 ,  G06F21/44 ,  G06F21/73 ,  G06F21/78

公开(公告)号：EP2186004B1

公开(公告)日：2018-06-06

申请号：EP08791594.8

申请日：2008-07-17

申请人： TOSHIBA MEMORY CORPORATION

发明人： KANNO, Shinichi ,  UCHIKAWA, Hironori

IPC分类号： G06F11/10

CPC分类号： H03M13/2906 ,  G06F11/10 ,  G06F11/1004 ,  G06F11/1008 ,  G06F11/1068 ,  G06F13/1673 ,  G06F13/4068 ,  G11C29/52 ,  H03M13/03 ,  H03M13/29 ,  H03M13/35 ,  H03M13/6561 ,  Y02D10/14 ,  Y02D10/151

摘要： A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.

公开(公告)号：EP3486910B1

公开(公告)日：2021-06-30

申请号：EP16908828.3

申请日：2016-07-13

发明人： SUGAHARA, Akio ,  NAGAI, Yuji

IPC分类号： G11C16/06 ,  G06F12/06 ,  G11C7/22 ,  G11C16/10

公开(公告)号：EP3541019B1

公开(公告)日：2021-03-03

申请号：EP18193439.9

申请日：2018-09-10

发明人： YAMAURA, Takahiro ,  GOTO, Masataka

IPC分类号： H04L12/26 ,  H04L12/24 ,  H04L12/58