Abstract:
A two-phase thermal conditioning system for thermal conditioning a part (1) of a lithographic apparatus, includes an evaporator (3) to be positioned in thermal contact with the part of the lithographic apparatus for extracting heat from the part by evaporation of a fluid inside the evaporator; a condenser (5) to be positioned at a distance from the part of the lithographic apparatus for removing heat from the fluid inside the condenser by condensation of the fluid inside the condenser; fluid lines (7,8,9) arranged between the evaporator and the condenser to form a circuit in which fluid is able to flow; a pump (14) arranged in the circuit to circulate the fluid in the circuit; an accumulator (16) configured to hold fluid, wherein the accumulator is in fluid communication with the circuit and comprises a heat exchanger (18) to transfer heat from or to fluid inside the accumulator; a temperature sensor (23) configured to provide a measurement signal representative of the temperature of the fluid; and a controller (27) configured to maintain a substantially constant temperature of the fluid inside the circuit by regulating the amount of heat transferred by the heat exchanger from or to fluid inside the accumulator based on the measurement signal.
Abstract:
A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO2 laser, producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation. For the device, the droplet source may comprise a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing at least some adjacent droplet pairs to coalesce together prior to reaching the irradiation region. In one implementation, the disturbance may comprise a frequency modulated disturbance waveform and in another implementation, the disturbance may comprise an amplitude modulated disturbance waveform.
Abstract:
The invention relates to a lithographic apparatus including a support frame (SF) which is supported by a base (BA) via a vibration isolation system; a projection system (PS) arranged to transfer a pattern from a patterning device onto a substrate, wherein the projection system includes a first frame (1F) which is spring-supported by the support frame; and an active damping system configured to damp movement of the first frame, including: a first sensor system (SE1) configured to provide a first sensor output representative of absolute movement of the first frame, a first actuator system (AC1) arranged to apply a force between the first frame and the support frame, and a control system (CS) configured to provide a drive signal to the first actuator system based on the first sensor output.
Abstract:
A fluid handling structure (12) for a lithographic apparatus is disclosed, the fluid handling structure successively has, at a boundary from a space (11) configured to contain immersion fluid to a region external to the fluid handling structure: an elongate opening or a plurality of openings (50) arranged in a first line that, in use, are directed towards a substrate (W) and/or a substrate table (WT) configured to support the substrate; a gas knife device (60) having an elongate aperture (61) in a second line; and an elongate opening or a plurality of openings (302) adjacent the gas knife device.
Abstract:
A lithographic apparatus comprising an optical column capable of creating a pattern on a target portion of a substrate is disclosed. The optical column has a self emissive contrast device (906) configured to emit a beam, and a projection system configured to project the beam onto the target portion. The apparatus has an actuator to move the optical column or a part thereof with respect to the substrate. The apparatus is constructed to reduce the optical effect of density variation in a medium around the moving part of the optical column on the beam by using a compartment (936) which provides a substantially closed environment around the moving part.
Abstract:
A radiation source including a fuel supply configured to deliver fuel to a plasma emission location for vaporization by a laser beam to form a plasma, and further including a collector configured to collect EUV radiation emitted by the plasma and direct it towards an intermediate focus (IF), the collector further including a diffraction grating configured to diffract infrared radiation emitted by the plasma, wherein the radiation source further ines a radiation conduit (300) located before the intermediate focus, the radiation conduit comprising an entrance aperture connected by an inwardly tapering body to an exit aperture, the radiation conduit comprising an inner portion (306) and an outer portion (308), the inner portion being closer to the intermediate focus than the outer portion, wherein the inner portion is configured to reflect incident diffracted infrared radiation towards the outer portion.
Abstract:
A substrate holder (100) for a lithographic apparatus has a planarization layer (108) provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack (200) forming an electronic component. The thin film stack comprises an (optional) isolation layer (201), a metal layer (202) forming an electrode, a sensor, a heater, a transistor or a logic device, and a top isolation layer (203).
Abstract:
An EUV lithographic apparatus (100) comprises a source collector apparatus (SO) in which the extreme ultraviolet radiation is generated by exciting a fuel to provide a plasma (210) emitting the radiation. The source collector apparatus (SO) includes a chamber (310) in fluid communication with a guide way (320) external to the chamber (310). A pump (BPS) for circulating buffer gas is part of the guide way (320), and provides a closed loop buffer gas flow (222). The gas flowing through the guide way (302) traverses a gas decomposer (TD1) wherein a compound of fuel material and buffer gas material is decomposed, so that decomposed buffer gas material can be fed back into the closed loop flow path (222).