EXTREMELY LOW RESISTANCE FILMS AND METHODS FOR MODIFYING OR CREATING SAME
    1.
    发明公开
    EXTREMELY LOW RESISTANCE FILMS AND METHODS FOR MODIFYING OR CREATING SAME 审中-公开
    随着对改造与生产极低的电阻和方法MOVIES

    公开(公告)号:EP2483927A1

    公开(公告)日:2012-08-08

    申请号:EP10821387.7

    申请日:2010-10-02

    申请人: Ambature L.L.C.

    IPC分类号: H01L29/66

    摘要: Operational characteristics of an extremely low resistance ("ELR") film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film In some implementations of the invention, the ELR film may be in the form of a "c-film " Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium