INTEGRATED SUPERCONDUCTOR DEVICE AND METHOD OF FABRICATION
    1.
    发明公开
    INTEGRATED SUPERCONDUCTOR DEVICE AND METHOD OF FABRICATION 审中-公开
    VERFAHREN ZUR HERSTELLUNG INTEGRIERTES SUPERHALBLEITERBAUEMENT

    公开(公告)号:EP3069381A2

    公开(公告)日:2016-09-21

    申请号:EP14880450.3

    申请日:2014-11-10

    IPC分类号: H01L21/768 H01L21/28

    摘要: An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

    摘要翻译: 集成超导体器件可以包括衬底基底和设置在衬底基底上并包括优选结晶取向的中间层。 集成超导体器件还可以包括设置在中间层上的定向超导体层和设置在定向超导体层的一部分上的导电条。导电条可以限定其下面的取向超导体层的超导体区域和暴露的 与超导体区域相邻的取向超导体层。