Drill blank
    5.
    发明公开
    Drill blank 失效
    Bohrerrohling

    公开(公告)号:EP0865864A1

    公开(公告)日:1998-09-23

    申请号:EP98301943.1

    申请日:1998-03-16

    IPC分类号: B23P15/28 B23P15/32 E21B10/56

    摘要: A drill blank, particularly a blank for a micro-drill, comprises an elongate cylindrical cemented carbide body, having flat end surfaces, a recess formed in one end surface and taking the form of an island in that surface wholly surrounded by cemented carbide, and an abrasive compact located in the recess, bonded to a cemented carbide, and presenting a surface coincident with the carbide end surface in which the recess is located. A drill may be formed from the drill blank by suitably shaping the cemented carbide body, for example, by fluting, in the region of the abrasive compact to expose the abrasive compact.

    摘要翻译: 钻头坯料,特别是用于微型钻头的坯件包括细长的圆柱形硬质合金体,其具有平坦的端面,在一个端面形成的凹部,并且在该表面中形成完全被硬质合金包围的岛状;以及 位于所述凹部中的研磨压块,结合到硬质合金,并且呈现与所述凹部所位于的所述碳化物端面重合的表面。 可以通过在研磨压块的区域中适当地成形硬质合金体,例如通过凹槽来暴露磨料压块,从钻孔坯形成钻头。

    Diamond
    8.
    发明公开
    Diamond 失效
    迪亚曼特

    公开(公告)号:EP0822269A1

    公开(公告)日:1998-02-04

    申请号:EP97305716.9

    申请日:1997-07-30

    IPC分类号: C23C16/26 B23B27/20

    摘要: A CVD diamond layer for use as an insert in an abrasive tool characterised by the following features:

    (i) the layer contains boron dopant atoms in a concentration of at least 0,05 atomic percent;
    (ii) an average tensile rupture strength of at least 600MPa with the nucleation phase in tension, and at least 300MPa with the growth face in tension, both such tensile rupture strengths being measured by a three point bend test on a sample 18mm long, 2mm wide and a thickness of 1,4mm or smaller.

    摘要翻译: 用作研磨工具中的插入物的CVD金刚石层,其特征在于具有以下特征:(i)该层含有浓度至少为0.05原子%的硼掺杂剂原子; (ii)拉伸中的成核相的平均拉伸断裂强度至少为600MPa,并且在生长面处于拉伸状态下至少为300MPa,这样的拉伸断裂强度通过对样品18mm长2mm的样品进行三点弯曲试验 宽,厚度为1,4mm以下。

    Doping of crystalline substrates
    10.
    发明公开
    Doping of crystalline substrates 失效
    掺杂单晶衬底

    公开(公告)号:EP0750058A3

    公开(公告)日:1997-08-27

    申请号:EP96304642.0

    申请日:1996-06-24

    IPC分类号: C30B33/00 C30B33/02 C30B33/04

    CPC分类号: C30B31/22

    摘要: A crystalline substrate (10) such as diamond, cubic boron nitride or silicon carbide is doped with a dopant atom such as boron, phosphorus or arsenic. The method includes the steps of creating a first damaged layer (14) containing vacancies and interstitial atoms in the crystal lattice of the crystalline substrate (10), implanting the dopant atoms under conditions to create a second damaged layer (18) separate from the first damaged layer (14) and containing the dopant atoms, and causing the dopant atoms in the second layer (18) to diffuse out of that layer (18) and into vacancies in the first layer (14) and thereby occupy substitutional positions in that layer (14).