公开(公告)号：EP2894680A4

公开(公告)日：2016-03-30

申请号：EP13835368

申请日：2013-09-10

申请人： LTD LIABILITY COMPANY LED MICROSENSOR NT

发明人： STOYANOV NIKOLAY DEEV ,  ZHURTANOV BIZHIGIT ERZHIGITOVICH

IPC分类号： H01L21/208 ,  H01L33/00 ,  H01L33/12 ,  H01L33/30

CPC分类号： H01L33/0025 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02623 ,  H01L33/0062 ,  H01L33/12 ,  H01L33/30

公开(公告)号：EP2897158A4

公开(公告)日：2016-08-31

申请号：EP13874680

申请日：2013-09-13

申请人： LTD LIABILITY COMPANY LED MICROSENSOR NT

发明人： KIZHAEV SERGEI SERGEEVICH

IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/18 ,  H01L33/30 ,  H01L33/36

CPC分类号： H01L21/02538 ,  H01L21/02455 ,  H01L21/0262 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  H01L33/0083 ,  H01L33/06 ,  H01L33/30 ,  Y02E10/544

摘要： The present invention relates to a technique of producing spontaneous radiation sources on the basis on A III B V semiconductor compounds for the spectral range of 2.6 - 4.7 µm, and to a technology of producing photosensitive structures for the spectral range of 2.0 - 4.7 µm. In the first embodiment, the heterostructure comprises a substrate containing InAs, a barrier layer which contains InSbP and which is arranged on the substrate, and an active layer which contains InAsSbP and which is arranged on the barrier layer. Light-emitting diodes produced on the basis of the first embodiment of the heterostructure emit at a wavelength in the range of 2.6 - 3.1 µm. In the second embodiment, the heterostructure comprises a substrate containing InAs, an active area which contains InAsSb and which is arranged on the substrate, and a barrier layer which contains InSbP and which is arranged on the active area. The active area can comprise a InAsSb bulk active layer, InAs/InAsSb quantum wells or a GaInAs/InAsSb strained superlattice. Light-emitting diodes produced on the basis of the second embodiment of the heterostructure emit at a wavelength in the range of 3.1- 4.7pm, and photodiodes have broadband sensitivity in the range of 2.0 - 4.7 µm. In the method of producing a heterostructure, tert-butylarsine is used as a source of arsenic, and tert-butylphosphine is used as a source of phosphorus.

摘要翻译： 本发明涉及一种在2.6-7.4μm的光谱范围内基于A III B V半导体化合物生产自发辐射源的技术，以及产生光谱范围为2.0-4.7μm的光敏结构的技术。 在第一实施例中，异质结构包括含有InAs的衬底，包含InSbP并且布置在衬底上的阻挡层，以及包含InAsbB并且布置在阻挡层上的有源层。 基于异质结构的第一实施例制造的发光二极管的发射波长在2.6-3.1μm的范围内。 在第二实施例中，异质结构包括含有InAs的衬底，其包含InAsSb并且布置在衬底上的有源区，以及包含InSbP并且布置在有源区上的阻挡层。 有源区可包括InAsSb体活性层，InAs / InAsSb量子阱或GaInAs / InAsSb应变超晶格。 基于异质结构的第二实施例产生的发光二极管的波长为3.1-4.7μm，光电二极管的宽度灵敏度在2.0-4.7μm的范围内。 在异质结构的制造方法中，使用叔丁基胂作为砷源，叔丁基膦用作磷源。