公开(公告)号：EP1733461A1

公开(公告)日：2006-12-20

申请号：EP05728328.5

申请日：2005-04-05

申请人： NL Nanosemiconductor GmbH

发明人： LEDENTSOV, Nikolai, Nikolaevich ,  SHCHUKIN, Vitaly, Alexandrovich

IPC分类号： H01S5/20

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01L33/105 ,  H01S5/2027 ,  H01S5/205 ,  H01S5/34 ,  H01S2301/02

摘要： A semiconductor optoelectronic device (650) includes at least one cavity (660) and one multilayered interference reflector (650, 630). The cavity (660) is designed preferably to possess properties of an antiwaveguiding cavity, where no optical modes propagate in the lateral plane. The existing optical modes are the modes propagating in the vertical direction or in a direction tilted to the vertical direction (633) at an angles smaller than the angle of the total internal reflection at the semiconductor/air interface. This design reduces the influence of parasitic optical modes and improves characteristics of optoelectronic devices including vertical cavity surface emitting lasers, tilted cavity lasers emitting through the top surfce or the substrate, vertical or tilted cavity resonant photodetectors, vertical or tilted cavity resonant optical amplifiers, and light-emitting diodes.