-
公开(公告)号：EP3483656A1
公开(公告)日：2019-05-15
申请号：EP18165360.1
申请日：2018-04-02
申请人： S&S Tech Co., Ltd.
发明人： NAM, Kee-Soo , LEE, Chang-Hun , HONG, Ju-Hee , PARK, Chul-Kyun
摘要： Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.
-
公开(公告)号：EP2851750A4
公开(公告)日：2015-09-09
申请号：EP12876938
申请日：2012-10-26
申请人： S&S TECH CO LTD
发明人： NAM KEE-SOO , KANG GEUNG-WON , LEE JONG-HWA , YANG CHUL-KYU , KWON SOON-GI
-
公开(公告)号：EP2851750A1
公开(公告)日：2015-03-25
申请号：EP12876938.7
申请日：2012-10-26
申请人： S&S Tech Co., Ltd.
发明人： NAM, Kee-Soo , KANG, Geung-Won , LEE, Jong-Hwa , YANG, Chul-Kyu , KWON, Soon-Gi
摘要： Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.
摘要翻译： 提供一种制造光掩模的方法，其中硬掩模膜图案被用作用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该空白掩模的光掩模的蚀刻掩模。 在该方法中，可以将用于图案化硬掩模膜的抗蚀剂膜形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。 因此，由于使用遮光膜图案，光密度可以保持为3.0，由此增加图案的分辨率和精度，减小负载效应并且改善临界尺寸（CD）特征，例如CD均匀性 和CD线性。
-
公开(公告)号：EP3373070A1
公开(公告)日：2018-09-12
申请号：EP18160280.6
申请日：2018-03-06
申请人： S&S Tech Co., Ltd.
发明人： NAM, Kee-Soo , LEE, Chang-Hun , HONG, Ju-Hee , PARK, Chul-Kyun
IPC分类号： G03F1/62
CPC分类号： G03F1/64 , G03F1/22 , G03F1/62 , G03F7/70983
摘要： Disclosed are a pellicle for an extreme ultraviolet (EUV) lithography, which is excellent in transmittance of EUV exposure light and mechanical strength, and a method of fabricating the same. The pellicle includes a support layer pattern; a buried oxide layer pattern formed on the support layer pattern; and a pellicle layer provided on the buried oxide layer pattern. The pellicle may further include a reinforcement layer for reinforcing the mechanical strength of the pellicle layer, an auxiliary layer for additionally supplementing the mechanical strength of the reinforcement layer, and a heat dissipation layer for dissipating heat of the pellicle layer.
-
5.发明公开
公开(公告)号：EP4443234A1
公开(公告)日：2024-10-09
申请号：EP23191602.4
申请日：2023-08-16
申请人： S&S Tech Co., Ltd.
发明人： PARK, Min-Kyu , WOO, Mi-Kyung , PARK, Min-Kwang , YANG, Chul-Kyu
摘要： Blankmask for EUV lithography has a reflective film formed on a substrate and an absorbing film formed on the reflective film. The absorbing film contains tantalum (Ta) and antimony (Sb). The absorbing film has a composition ratio of Ta:Sb = 2:8 - 6:4 at%. The absorbing film with a high extinction coefficient (k) allows for the thin film deposition of the absorbing film, reducing the Shadowing Effect and 3D Effect.
-
公开(公告)号：EP4443233A1
公开(公告)日：2024-10-09
申请号：EP23191600.8
申请日：2023-08-16
申请人： S&S Tech Co., Ltd.
发明人： PARK, Min-Kwang , PARK, Min-Kyu , WOO, Mi-Kyung , YANG, Chul-Kyu , KIM, Yong-Dae
摘要： Disclosed is a blankmask for EUV lithography. The blankmask has a reflective flim formed on a substrate, a capping film containing ruthenium (Ru), an etch stop film containing tantalum (Ta) and antimony (Sb), and a phase shift film containing ruthenium (Ru). The etch stop film has a composition ratio of tantalum (Ta) and antimony (Sb) ranging from 3:7 to 7:3. The stacked structure of the phase shift film containing ruthenium (Ru) and the etch stop film containing tantalum (Ta) and antimony (Sb) results in achieving a high extinction coefficient (k) and a low refractive index (n).
-
公开(公告)号：EP3798728A1
公开(公告)日：2021-03-31
申请号：EP19219207.8
申请日：2019-12-23
申请人： S&S Tech Co., Ltd.
发明人： NAM, Kee-Soo , LEE, Chang-Hun , YUN, Jong-Won , PARK, Chul-Kyun
摘要： Disclosed is a pellicle for extreme ultraviolet (EUV) lithography, with a core layer (10) formed on a pellicle frame (90), the core layer comprising: a first layer (11); and a second layer (12). The first layer includes silicon. The second layer includes one among a metal silicide that has silicon with metal, a silicon compound that has silicon with a light element, and a metal silicide compound that has silicon with metal and a light element. With this, the pellicle is improved in mechanical, thermal and chemical stability with minimum loss of optical characteristics.
-
公开(公告)号：EP3136172A1
公开(公告)日：2017-03-01
申请号：EP15188772.6
申请日：2015-10-07
申请人： S&S Tech Co., Ltd.
发明人： Nam, Kee-Soo , Shin, Cheol , Lee, Jong-Hwa , Yang, Chul-Kyu , Choi, Min-Ki , Kim, Chang-Jun , Jeon, Young-Jo
摘要： Disclosed are a blank mask and a photomask, in which compositions of metal and light elements of a light-shielding film are controlled so that the light-shielding film can guarantee a light-shielding efficiency, increase an etching speed, become thinner, and have a minimum sheet-resistance.
To this end, the blank mask according to the present invention includes at least a light-shielding film on a transparent substrate, and the light-shielding film includes a first light-shielding layer adjacent to the transparent substrate and a second light-shielding layer formed on the first light-shielding layer, in which the first and the second light-shielding film contains chrome (Cr) and molybdenum (Mo).摘要翻译： 公开了一种空白掩模和光掩模，其中控制了遮光膜的金属和光元件的组成，使得遮光膜可以保证遮光效率，增加蚀刻速度，变薄，并且具有 最小电阻。 为此，根据本发明的掩模掩模至少在透明基板上至少包括遮光膜，并且遮光膜包括与透明基板相邻的第一遮光层和第二遮光层 形成在第一遮光层上，其中第一和第二遮光膜含有铬（Cr）和钼（Mo）。
-
公开(公告)号：EP4318128A1
公开(公告)日：2024-02-07
申请号：EP23187930.5
申请日：2023-07-26
申请人： S&S Tech Co., Ltd.
发明人： HONG, Ju-Hee , PARK, Chul-Kyun , CHOI, Mun-Su , KIM, Dong-Hoi
摘要： The pellicle has a pellicle portion that allows transmission of EUV exposure light. The pellicle portion comprises a heat radiation layer for radiating heat generated by irradiation of EUV exposure light. The heat radiation layer comprises metal and silicon, and the metal content of the heat radiation layer is greater than the silicon content. This ensures a high transmittance of 90% or more, while improving the heat radiation performance of the pellicle portion, so that it can be applied to EUV exposure light powers of 600W or more.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.013 秒)
