Method for growing single crystal of silicon carbide
    8.
    发明授权
    Method for growing single crystal of silicon carbide 有权
    一种用于生长碳化硅的单晶过程

    公开(公告)号:EP1803840B1

    公开(公告)日:2009-02-04

    申请号:EP07006992.7

    申请日:1999-12-24

    CPC classification number: C30B23/00 C30B29/36

    Abstract: In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so as to grow a silicon carbide single crystal (3) on the seed crystal, the temperature gradient from the back surface of the seed crystal (2) toward the crucible cap (8) side is rendered zero or a positive value, whereby the back surface sublimation from the back surface of the seed crystal (2) is prevented or suppressed. Furthermore, by allowing the inner wall of the growth vessel in the periphery of the seed crystal to have a temperature higher than the temperature on the surface of the seed crystal (2), a polycrystal silicon carbide is prevented or suppressed from growing and thereby inhibiting the growth of a silicon carbide single crystal (3).

    AZEOTROPIC DISTILLATION METHOD
    9.
    发明公开
    AZEOTROPIC DISTILLATION METHOD 有权
    共沸蒸馏方法

    公开(公告)号:EP1981833A2

    公开(公告)日:2008-10-22

    申请号:EP07708194.1

    申请日:2007-02-01

    Abstract: An azeotropic distillation method, comprising a reaction step, a distillation step for separating and refining a reaction product, and a recovery step for collecting a reactant after the distillation step; wherein at least one component constituting the reactant in the reaction step can act as an entrainer for the azeotropic distillation in the distillation step; and a portion of the reactant capable of acting as the entrainer is supplied to the distillation step.

Patent Agency Ranking