Abstract:
Provided are carbon fibers with low metal ion elution amount without subjecting to high-temperature heat treatment, in which the metal ion may be sometimes precipitated on an electrode of electrochemical devices such as batteries and capacitors to cause short-circuit. The carbon fibers comprises Fe, at least one catalyst metal selected from the group consisting of Mo and V, and a carrier; wherein the carbon fibers have an R value (ID/IG) as measured by Raman spectrometry of 0.5 to 2.0 and have an electrochemical metal elution amount of not more than 0.01 % by mass.
Abstract:
A semiconductor device is disclosed that comprises: an insulation substrate (13), a first metal plate (14), a semiconductor element (12), a second metal plate (15), and a heat sink (16) for cooling the semiconductor element (12). The heat sink (16) includes a case portion (17) and a plurality of partitioning walls (18, 60, 70). All the partitioning walls (18, 60, 70) are located in a region in the case portion (17) that is directly below the semiconductor element (12).
Abstract:
The invention relates to a composite material comprising carbon fibers and complex oxide particles, wherein the carbon fibers and the complex oxide particles have a carbon coating on at least part of their surface, said carbon coating being a non powdery coating The material is prepared by a method comprising mixing a complex oxide or precursors thereof, an organic carbon precursor and carbon fibers, and subjecting the mixture to a heat treatment in an inert or reducing atmosphere for the decomposition of the precursors The material is useful as the cathode material in a battery
Abstract:
The invention relates to an antistatic agent, which comprises a water-soluble electroconductive polymer and a biosurfactant having a hydrophilic site of a molecular weight of 200 to 10,000, excellent in property of preventing film-thinning in chemically amplified resist, and an antistatic film and a coated product obtained by using the antistatic agent.
Abstract:
In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so as to grow a silicon carbide single crystal (3) on the seed crystal, the temperature gradient from the back surface of the seed crystal (2) toward the crucible cap (8) side is rendered zero or a positive value, whereby the back surface sublimation from the back surface of the seed crystal (2) is prevented or suppressed. Furthermore, by allowing the inner wall of the growth vessel in the periphery of the seed crystal to have a temperature higher than the temperature on the surface of the seed crystal (2), a polycrystal silicon carbide is prevented or suppressed from growing and thereby inhibiting the growth of a silicon carbide single crystal (3).
Abstract:
An azeotropic distillation method, comprising a reaction step, a distillation step for separating and refining a reaction product, and a recovery step for collecting a reactant after the distillation step; wherein at least one component constituting the reactant in the reaction step can act as an entrainer for the azeotropic distillation in the distillation step; and a portion of the reactant capable of acting as the entrainer is supplied to the distillation step.
Abstract:
An activated carbon having the highest peak D within the range of 1.0 nm to 1.5 nm, in which the peak D is from 0.012 to 0.050 cm3/g and is from 2 % to 32 % to a total pore volume, in pore size distribution as calculated by BJH method from N2-adsorption isotherm at 77.4 K. An electric double layer capacitor comprising the polarizable electrode which comprises the activated carbon, carbon fiber, carbon black, and binder.