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1.发明公开
公开(公告)号：EP1751329A1
公开(公告)日：2007-02-14
申请号：EP05741354.4
申请日：2005-05-13
CPC分类号： C23C16/325
摘要： A method of epitaxial growth of a 4H-SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H-SiC single crystal on a 4H-SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H-SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a axial direction, and a 4H-SiC single crystal obtained by the same.
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2.发明公开
公开(公告)号：EP1652973A1
公开(公告)日：2006-05-03
申请号：EP05023532.4
申请日：2005-10-27
申请人： SIXON LTD. , THE KANSAI ELECTRIC POWER CO., INC. , Sumitomo Electric Industries, Ltd. , Mitsubishi Corporation
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： SiC single crystal (2a) that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5 × 10 15 atoms/cm 3 , the content of the second dopant is no less than 5 × 10 15 atoms/cm 3 , and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal (2a) is provided with the steps of: fabricating a raw material (2) by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material (2); generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal (2a) that includes boron and nitrogen on a surface of a seed crystal substrate (1) by re-crystallizing the mixed gas on the surface of the seed crystal substrate (1).
摘要翻译： SiC单晶（2a）中做了包括第一掺杂剂，其作为到受体，和第二掺杂剂用作施主被提供，其中，所述第一掺杂剂的含量为不小于5×10 15原子/ cm 3时，内容 所述第二掺杂剂是不小于5×10 15原子/ cm 3以下，并且所述第一掺杂剂的含量大于所述第二掺杂剂的含量更高。 对于碳化硅单晶（2a）中的制造方法具有如下步骤：通过混合金属硼化物与材料的制造原料（2）并包括碳和硅; 蒸发原料（2）; 产生的混合气体做包括碳，硅，硼和氮化物; 和生长碳化硅单晶（2a）中那样包括籽晶衬底（1）的表面上的硼和氮通过重结晶的混合气体在晶种基板的表面上（1）。
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公开(公告)号：EP1751329B1
公开(公告)日：2008-01-09
申请号：EP05741354.4
申请日：2005-05-13
CPC分类号： C23C16/325
摘要： A method of epitaxial growth of a 4H-SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H-SiC single crystal on a 4H-SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H-SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a axial direction, and a 4H-SiC single crystal obtained by the same.
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