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1.发明公开
公开(公告)号：EP1751329A1
公开(公告)日：2007-02-14
申请号：EP05741354.4
申请日：2005-05-13
CPC分类号： C23C16/325
摘要： A method of epitaxial growth of a 4H-SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H-SiC single crystal on a 4H-SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H-SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a axial direction, and a 4H-SiC single crystal obtained by the same.
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公开(公告)号：EP1751329B1
公开(公告)日：2008-01-09
申请号：EP05741354.4
申请日：2005-05-13
CPC分类号： C23C16/325
摘要： A method of epitaxial growth of a 4H-SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H-SiC single crystal on a 4H-SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H-SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a axial direction, and a 4H-SiC single crystal obtained by the same.
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