公开(公告)号：EP4367723A1

公开(公告)日：2024-05-15

申请号：EP22747956.5

申请日：2022-07-05

申请人： Soitec Belgium

发明人： DERLUYN, Joff ,  KANDASWAMY, Prem Kumar ,  PETERSEN BARBOSA LIMA, Lucas

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/423

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316

公开(公告)号：EP4449482A1

公开(公告)日：2024-10-23

申请号：EP22817285.4

申请日：2022-11-16

申请人： SOITEC ,  Soitec Belgium

发明人： VEYTIZOU, Christelle ,  RADU, Ionut ,  DERLUYN, Joff ,  DEGROOTE, Stefan

IPC分类号： H01L21/322 ,  H01L29/10 ,  H01L21/762 ,  H01L29/778 ,  H01L21/28 ,  H01L29/20 ,  H01L29/51 ,  H01L21/20

公开(公告)号：EP4117041A1

公开(公告)日：2023-01-11

申请号：EP21184134.1

申请日：2021-07-06

申请人： Soitec Belgium

发明人： Derluyn, Joff ,  Kandaswamy, Prem Kumar ,  Petersen Barbosa Lima, Lucas

IPC分类号： H01L29/205 ,  H01L29/267 ,  H01L29/778 ,  H01L29/20

摘要： A semiconductor structure (1) comprising:
- a substrate (100);
- an epitaxial III-N semiconductor layer stack (200) on top of said substrate (100), said epitaxial III-N semiconductor layer stack (200) comprising:
∘ a first active III-N layer (201);
∘ a spacer layer (202) on top of said first active III-N layer (201);
∘ a diffusion barrier layer (203) on top of said spacer layer (202);
∘ a second active III-N layer (204) on top of said diffusion barrier layer (203),

wherein said second active III-N layer (204) comprises Indium Aluminium Nitride;
with a two dimensional Electron Gas (20) between said first active III-N layer (201) and said second active III-N layer (204);
and wherein said diffusion barrier layer (203) comprises an Aluminium mole fraction lower than 0.20.