公开(公告)号：EP3206227A1

公开(公告)日：2017-08-16

申请号：EP15848453.5

申请日：2015-10-08

申请人： Superufo291 Tec

发明人： FUKUI, Akira

IPC分类号： H01L23/373 ,  B22F3/10 ,  B22F3/14 ,  C22C26/00 ,  C23C18/16 ,  C25D5/50

CPC分类号： H01L23/3732 ,  B22F3/1035 ,  B22F3/105 ,  B22F3/14 ,  B22F3/16 ,  B22F3/24 ,  B22F7/008 ,  B22F7/04 ,  B22F2003/247 ,  B22F2007/042 ,  B22F2301/052 ,  B22F2301/255 ,  B22F2302/406 ,  B22F2998/10 ,  B22F2999/00 ,  B23K1/0016 ,  C22C26/00 ,  C23C18/16 ,  C23C18/32 ,  C25D3/12 ,  C25D5/12 ,  C25D5/34 ,  C25D5/44 ,  C25D5/50 ,  C25D7/12 ,  H01L21/4882 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2003/241

摘要： A heat dissipation substrate having a metallic layer with few defects on its surface is obtained by a process including the steps of: forming a metallic layer by plating on the surface of an alloy composite mainly composed of a powder of a principal metal, additional metal and diamond; and heating and pressurizing the alloy composite coated with the metallic layer, at a temperature equal to or lower than the melting points of the metallic layer and the alloy composite. Consequently a heat dissipation substrate is obtained which has a coefficient of linear expansion of 6.5 ppm/K or higher and 15 ppm/K or lower as well as a degree of thermal conductivity of 420 W/m·K or higher, the substrate having a metallic layer with few defects in its surface layer and thereby allowing for a Ni-based plating on which the void percentage in the solder joint will be 5 % or lower.

摘要翻译： 具有表面缺陷少的金属层的散热基板通过包括以下步骤的方法获得：通过电镀在主要由主要金属，附加金属和主要金属的粉末组成的合金复合物的表面上形成金属层， 钻石; 以及在等于或低于金属层和合金复合物的熔点的温度下加热和加压涂覆有金属层的合金复合物。 因此，得到线膨胀系数为6.5ppm / K以上且15ppm / K以下，并且热传导率为420W / m·K以上的散热基板， 在其表面层中具有很少缺陷的金属层，从而允许在焊接接缝中空隙百分比为5％或更低的Ni基镀层。

公开(公告)号：EP3229268A1

公开(公告)日：2017-10-11

申请号：EP15865455.8

申请日：2015-11-27

申请人： Superufo291 Tec

发明人： FUKUI, Akira

IPC分类号： H01L23/373 ,  H01L23/12 ,  H01L23/36

CPC分类号： H01L23/3735 ,  B22F1/0011 ,  B22F3/16 ,  C22C1/045 ,  C22C27/04 ,  C22F1/18 ,  C23C18/32 ,  C23C18/38 ,  H01L21/4871 ,  H01L23/12 ,  H01L23/3736 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipation substrate having the maximum value of the coefficient of linear expansion of 10 ppm/K or less in any direction in a plane parallel to the surface within a temperature range from room temperature to 800°C as well as a thermal conductivity of 250 W/m•K or higher at 200°C is produced by densifying an alloy composite of CuMo or CuW composed of Cu and coarse powder of Mo or W and subsequently cross-rolling the same alloy composite.

摘要翻译： 在从室温到800℃的温度范围内在与表面平行的平面中在任何方向上具有10ppm / K或更小的线性膨胀系数的最大值的散热基板以及250 200℃时的W / m·K以上是通过使由Cu构成的CuMo或CuW与Mo或W的粗大粉末的合金复合体致密化并随后交叉轧制相同的合金复合物而产生的。

公开(公告)号：EP3229268A4

公开(公告)日：2018-01-03

申请号：EP15865455

申请日：2015-11-27

申请人： SUPERUFO291 TEC

发明人： FUKUI AKIRA

IPC分类号： H01L23/373

CPC分类号： H01L23/3735 ,  B22F1/0011 ,  B22F3/16 ,  C22C1/045 ,  C22C27/04 ,  C22F1/18 ,  C23C18/32 ,  C23C18/38 ,  H01L21/4871 ,  H01L23/12 ,  H01L23/3736 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipation substrate having the maximum value of the coefficient of linear expansion of 10 ppm/K or less in any direction in a plane parallel to the surface within a temperature range from room temperature to 800°C as well as a thermal conductivity of 250 W/m€¢K or higher at 200°C is produced by densifying an alloy composite of CuMo or CuW composed of Cu and coarse powder of Mo or W and subsequently cross-rolling the same alloy composite.

公开(公告)号：EP3206227A4

公开(公告)日：2017-10-25

申请号：EP15848453

申请日：2015-10-08

申请人： SUPERUFO291 TEC

发明人： FUKUI AKIRA

IPC分类号： C25D5/12 ,  C25D5/50 ,  C25D7/12 ,  H01L23/373

CPC分类号： H01L23/3732 ,  B22F3/1035 ,  B22F3/105 ,  B22F3/14 ,  B22F3/16 ,  B22F3/24 ,  B22F7/008 ,  B22F7/04 ,  B22F2003/247 ,  B22F2007/042 ,  B22F2301/052 ,  B22F2301/255 ,  B22F2302/406 ,  B22F2998/10 ,  B22F2999/00 ,  B23K1/0016 ,  C22C26/00 ,  C23C18/16 ,  C23C18/32 ,  C25D3/12 ,  C25D5/12 ,  C25D5/34 ,  C25D5/44 ,  C25D5/50 ,  C25D7/12 ,  H01L21/4882 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2003/241

摘要： A heat dissipation substrate having a metallic layer with few defects on its surface is obtained by a process including the steps of: forming a metallic layer by plating on the surface of an alloy composite mainly composed of a powder of a principal metal, additional metal and diamond; and heating and pressurizing the alloy composite coated with the metallic layer, at a temperature equal to or lower than the melting points of the metallic layer and the alloy composite. Consequently a heat dissipation substrate is obtained which has a coefficient of linear expansion of 6.5 ppm/K or higher and 15 ppm/K or lower as well as a degree of thermal conductivity of 420 W/m·K or higher, the substrate having a metallic layer with few defects in its surface layer and thereby allowing for a Ni-based plating on which the void percentage in the solder joint will be 5 % or lower.

公开(公告)号：EP4365938A1

公开(公告)日：2024-05-08

申请号：EP22832486.9

申请日：2022-03-17

申请人： Superufo291 Tec

发明人： FUKUI, Akira ,  FUKUI, Toshie

IPC分类号： H01L23/36 ,  H01L23/373 ,  H01L21/52

CPC分类号： H01L23/36 ,  H01L21/52 ,  H01L23/373

摘要： A bonding member includes a layered body (10) formed by layering a plurality of foils (11) made of a material selected from Au, Ag, Cu, Al, Ni, Sn, Zn, Mg, Pb, and an alloy of two or more of these metals, which are metals having high heat conductivity, the layered body having a void (12) of 5 vol% or more and 30 vol% or less inside, in which thermal conductivity after a power cycle test in which heating to 200 °C and cooling to 25 °C are repeated 300 times is 30 W/m·K or more.

公开(公告)号：EP4174934A1

公开(公告)日：2023-05-03

申请号：EP21868973.5

申请日：2021-06-28

申请人： Superufo291 Tec

发明人： FUKUI, Akira ,  FUKUI, Toshie

IPC分类号： H01L23/36 ,  B23K35/14 ,  B23K35/30 ,  H01L21/52

摘要： A bonding member 10 used for bonding a semiconductor device 20 and a substrate 30, the bonding member including: a thermal stress relieving layer 11 made of any of Ag, Cu, Au, and Al; a first Ag brazing material layer 12 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the semiconductor device is bonded; a second Ag brazing material layer 13 containing Ag and Sn as main components and provided on a side of the thermal stress relieving layer to which the substrate is bonded; a first barrier layer 14 made of Ni and/or Ni alloy and provided between the thermal stress relieving layer and the first Ag brazing material layer; and a second barrier layer 15 made of Ni and/or Ni alloy and provided between the stress relieving layer and the second Ag brazing material layer, in which a thermal conductivity of the bonding member after a power cycle test is 200 W/m · K or more.