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    Graphite intercalation compounds and their production
    1.
    发明公开
    Graphite intercalation compounds and their production 失效
    Graphiteinlagerungsverbindungen und deren Herstellung

    公开(公告)号：EP0736487A1

    公开(公告)日：1996-10-09

    申请号：EP96302397.3

    申请日：1996-04-03

    申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Tanaka, Shun-ichiro

    发明人： Xu, BingShe ,  Tanaka, Shun-ichiro

    IPC分类号： C01B31/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/22

    摘要： An onion-like graphite 2 is produced by irradiating an electron beam to impinge upon an amorphous carbon 3 under an active aluminium nanoparticle 1. By further irradiating the electron beam upon the onion-like graphite 2 to intercalate aluminium atoms which are a constituent of the aluminium nanoparticle 1 within a space between the (001) plane and the (002) plane of the onion-like graphite 2 having a layer structure, an intercalation compound 4 is produced. Alternatively, after the aluminium nanoparticles have been disposed on the onion-like graphite and impinged thereupon by an electron beam by further irradiating the electron beam to intercalate aluminium atoms in the space between the (001) plane and the (002) plane of the onion-like graphite having a layer structure, the intercalation compounds can be produced.

    摘要翻译： 通过照射电子束来冲击活性铝纳米颗粒1下的无定形碳3来制造洋葱状石墨2.通过进一步将电子束照射到洋葱状石墨2上以插入铝原子，其为 在具有层结构的洋葱状石墨2的（001）面和（002）面之间的空间内的铝纳米颗粒1，制备插层化合物4。 或者，在将铝纳米颗粒设置在洋葱状石墨上并通过进一步照射电子束以在铝（001）面和（002）面之间的空间内插入铝原子的情况下通过电子束照射 具有层状结构的石墨，可以制造插层化合物。

    Fine structure and fabricating method thereof
    2.
    发明公开
    Fine structure and fabricating method thereof 失效
    精细结构和它们的制备方法

    公开(公告)号：EP0884768A3

    公开(公告)日：2000-01-05

    申请号：EP98304603.8

    申请日：1998-06-10

    申请人： Japan Science and Technology Corporation ,  Tanaka, Shun-ichiro

    发明人： Wakayama, Yutaka ,  Tanaka, Shun-ichiro

    IPC分类号： H01L21/20 ,  H01L29/12 ,  C30B19/00 ,  C30B1/00

    CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653

    摘要： Dispose a fine metal particle (2) on a semiconductor substrate (1). By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution (3), resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection (4) epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer (2') disposed selectively on the semiconductor fine projection, can be obtained. The metal layer (2') can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.

    Ultrafine particles and production method thereof
    4.
    发明公开
    Ultrafine particles and production method thereof 失效
    超薄Teilchen和Verfahren zu ihrer Herstellung

    公开(公告)号：EP0735001A2

    公开(公告)日：1996-10-02

    申请号：EP96300919.6

    申请日：1996-02-09

    申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Tanaka, Shun-ichiro

    发明人： Tanaka, Shun-Ichiro ,  Xu, Bing She

    IPC分类号： C01B13/14 ,  C01F7/02 ,  B22F9/18 ,  C22C1/10

    CPC分类号： B82Y30/00 ,  B22F1/0018 ,  B22F9/30 ,  B22F2202/11 ,  C01B13/145 ,  C01F7/027 ,  C01P2004/32 ,  C01P2004/62 ,  C01P2004/64

    摘要： An electron beam of more than 1 x 10 19 e/cm 2 .sec is irradiated upon metastable metal oxide particles such as Θ-Al 2 O 3 particles 1 disposed on an amorphous carbon film. A phase transformation of the metastable metal oxide particles results from the electron beam irradiation. Thus, stable metal oxide ultrafine particles such as α-Al 2 O 3 ultrafine particles 2 whose diameter is smaller than the metastable metal oxide particles used, can be produced. Metal nanoparticles of a metal component of the oxide such as of aluminium may also be produced.

    摘要翻译： 将大于1×10 19 e / cm 2·sec的电子束照射在设置在无定形碳膜上的诸如THETA-Al2O3颗粒1的亚稳金属氧化物颗粒上。 亚稳态金属氧化物颗粒的相变是由电子束照射引起的。 因此，可以制备稳定的金属氧化物超细颗粒，例如其直径小于所使用的亚稳态金属氧化物颗粒的α-Al2O3超细颗粒2。 还可以生产诸如铝的氧化物的金属组分的金属纳米颗粒。

    Ultrafine particle-enclosing fullerene and production method thereof
    5.
    发明公开
    Ultrafine particle-enclosing fullerene and production method thereof 失效
    超凡的teilcheneinschliessende富勒勒和德恩Herstellungsverfahren

    公开(公告)号：EP0726228A1

    公开(公告)日：1996-08-14

    申请号：EP96300918.8

    申请日：1996-02-09

    申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Tanaka, Shun-ichiro

    发明人： Tanaka, Shun-Ichiro ,  Xu, Bing She

    IPC分类号： C01B31/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152 ,  Y10S423/39 ,  Y10S423/40 ,  Y10S977/736

    摘要： After an ultrafine particle is disposed on a giant fullerene by driving the ultrafine particle 1 using an electron beam, the ultrafine particle is enclosed in a hollow core portion of the giant fullerene, by contracting the giant fullerene using e.g. electron beam irradiation.
    A metal ultrafine particle composed of an active metal can be enclosed in the hollow core portion of the giant fullerene, by irradiating, a high energy beam such as an electron beam upon an amorphous carbon substrate in the presence of the active metal to form the giant fullerene in an irradiated portion thereof, and by contracting the giant fullerene using high energy beam irradiation such as electron beam irradiation.

    摘要翻译： 在通过使用电子束驱动超细颗粒1将超细颗粒设置在巨型富勒烯上之后，通过使用例如氧化铝收缩巨型富勒烯将超细颗粒封闭在巨富勒烯的中空芯部分中。 电子束照射。 由活性金属构成的金属超微粒子可以通过在活性金属的存在下将诸如电子束的高能束照射到无定形碳衬底上，形成巨型富勒烯的中空芯部，形成巨型 并且通过使用诸如电子束照射的高能量束照射来收缩巨型富勒烯。

    Fine structure and fabricating method thereof
    6.
    发明公开
    Fine structure and fabricating method thereof 失效
    Feinstruktur und Verfahren zu ihrer Herstellung

    公开(公告)号：EP0884768A2

    公开(公告)日：1998-12-16

    申请号：EP98304603.8

    申请日：1998-06-10

    申请人： Japan Science and Technology Corporation ,  Tanaka, Shun-ichiro

    发明人： Wakayama, Yutaka ,  Tanaka, Shun-ichiro

    IPC分类号： H01L21/20 ,  H01L29/12

    CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653

    摘要： Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.

    摘要翻译： 在半导体衬底上处理金属微粒。 通过在真空中进行热处理，将半导体基板的构成元素溶解到金属微粒中形成固溶体，进一步形成由半导体金属构成的均匀的液相（液滴）。 通过退火，半导体衬底的构成元素从半导体 - 金属液滴中析出。 因此，可以获得包括半导体衬底，在半导体衬底上的任意位置选择性地外延生长的半导体精细投影和选择性地设置在半导体精细投影上的金属层的精细投影复合结构。 可以根据需要移除金属层。 这种精细投影复合结构在例如超高集成度半导体器件或量子尺寸器件中具有适用性。

    Ultrafine particle structure and production method thereof
    7.
    发明公开
    Ultrafine particle structure and production method thereof 失效
    超凡的Teilchenstruktur和Verfahren zu ihrer Herstellung

    公开(公告)号：EP0841703A2

    公开(公告)日：1998-05-13

    申请号：EP97307559.1

    申请日：1997-09-26

    申请人： Japan Science and Technology Corporation ,  Tanaka, Shun-ichiro

    发明人： Tanaka, Shun-ichiro ,  Xu, BingShe

    IPC分类号： H01L29/12 ,  H01L21/26

    CPC分类号： H01L23/53204 ,  B81C1/00492 ,  H01L21/314 ,  H01L21/32051 ,  H01L21/76838 ,  H01L23/528 ,  H01L2924/0002 ,  Y10T428/12181 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/257 ,  H01L2924/00

    摘要： Ultrafine particle structure composed of a plurality of ultrafine particles disposed continuously on a substrate forming a desired shape. A plurality of the ultrafine particles consist of ultrafine particles of metal, semiconductor, compound, and the like. The ultrafine particles constituting an ultrafine particle structure are produced by disposing a target material having a slit of desired shape on a substrate and irradiating a high energy beam in a slanting direction to an inner wall surface of the target material. Constituent atoms or molecules liberated from the target material by irradiation of a high energy beam in a slanting direction are disposed continuously as a plurality of ultrafine particles on the substrate. By contacting or at least partially bonding between adjacent ultrafine particles, ultrafine particle structure is formed. Such an ultrafine particle structure contributes greatly to realization of ultrafine wirings, ultrafine devices, ultrafine functional materials, and the like which utilize the ultrafine particles.

    摘要翻译： 超细颗粒结构由连续设置在形成所需形状的基材上的多个超细颗粒组成。 多个超细颗粒由金属，半导体，化合物等的超微粒子组成。 通过将具有所需形状的狭缝的目标材料设置在基板上，并将倾斜方向的高能束照射到目标材料的内壁面上，来制造构成超微粒子结构的超微粒子。 通过沿倾斜方向照射高能束而从目标材料释放的成分原子或分子作为多个超细颗粒连续地设置在基板上。 通过在相邻的超细颗粒之间接触或至少部分地结合，形成超微粒子结构。 这种超微粒子结构对于利用超微粒子的超细布线，超微细器件，超细功能材料等的实现有很大的帮助。

    Fullerene composite
    8.
    发明公开
    Fullerene composite 失效
    Fullerenkomposit。

    公开(公告)号：EP0679610A1

    公开(公告)日：1995-11-02

    申请号：EP95302883.4

    申请日：1995-04-27

    申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Tanaka, Shun-ichiro

    发明人： Tanaka, Shun-ichiro

    IPC分类号： C01B31/02 ,  C04B35/83

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152 ,  C04B35/83 ,  Y10S423/40 ,  Y10S977/734 ,  Y10S977/735 ,  Y10S977/742 ,  Y10S977/776 ,  Y10S977/778 ,  Y10S977/888 ,  Y10T428/2918

    摘要： A fullerene composite (1) comprises a matrix formed of ultrafine fullerene (2) such as, for example, C₆₀ crystallite having diameters in the range of from 5 to 50 nm and a reinforcing member formed of a mixture consisting of carbon nanotubes (3), carbon nanocapsules (4), and inevitable indeterminate carbonaceous impurities and incorporated in the matrix. The amount of the reinforcing member incorporated in the matrix is in the range of from 15 to 45% by weight based on the amount of the matrix. Owing to the use of the reinforcing member which contains carbon nanotubes and carbon nanocapsules, the produced fullerene composite can have improved mechanical strength and resistance to deformation, to widen potential industrial applications of fullerenes.

    摘要翻译： 富勒烯复合材料（1）包括由超细富勒烯（2）形成的基体，例如直径在5至50nm范围内的C60微晶，以及由碳纳米管（3）组成的混合物形成的增强部件， ，碳纳米胶囊（4），以及不可避免的不确定含碳杂质并加入到基质中。 加入基质中的增强材料的量基于基质的量在15至45重量％的范围内。 由于使用含有碳纳米管和碳纳米胶囊的增强部件，所制造的富勒烯复合材料可以具有改善的机械强度和耐变形性，以扩大富勒烯的潜在工业应用。