公开(公告)号：EP1652890B1

公开(公告)日：2017-01-11

申请号：EP04747118.0

申请日：2004-07-07

申请人： Merck Patent GmbH

发明人： AOKI, Tomoko, c/o AZ Electronic Materials K.K. ,  AOKI, Hiroyuki c/o AZ Electronic Materials K.K.

IPC分类号： C08L83/16 ,  C01B33/12 ,  H01L21/312 ,  C09D183/16 ,  H01L21/768

CPC分类号： H01L21/76837 ,  C08K5/49 ,  C08L83/16 ,  C09D183/16 ,  H01L21/314

公开(公告)号：EP2273538A3

公开(公告)日：2011-03-02

申请号：EP10184650.9

申请日：2006-11-17

申请人： Intel Corporation

发明人： Brask, Justin, K ,  Datta, Suman ,  Doczy, Mark, L ,  Blackwell, James, M ,  Metz, Matthew, V ,  Kavalieros, Jack, T. ,  Chau, Robert, S

IPC分类号： H01L21/314 ,  H01L29/51 ,  H01L21/28 ,  H01L21/335 ,  H01L29/49 ,  H01L29/788 ,  H01L21/316 ,  H01L29/20

CPC分类号： H01L21/314 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28008 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/2003 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7784

摘要： A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

公开(公告)号：EP2273538A2

公开(公告)日：2011-01-12

申请号：EP10184650.9

申请日：2006-11-17

申请人： Intel Corporation

发明人： Brask, Justin, K ,  Datta, Suman ,  Doczy, Mark, L ,  Blackwell, James, M ,  Metz, Matthew, V ,  Kavalieros, Jack, T. ,  Chau, Robert, S

IPC分类号： H01L21/314 ,  H01L29/51 ,  H01L21/28 ,  H01L21/335 ,  H01L29/49 ,  H01L29/788 ,  H01L21/316 ,  H01L29/20

CPC分类号： H01L21/314 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28008 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/2003 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7784

摘要： A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

摘要翻译： 描述了III-V族半导体器件及其制造方法。 高k电介质通过硫族化物区域连接到约束区域。

公开(公告)号：EP1347510B1

公开(公告)日：2010-07-14

申请号：EP02024915.7

申请日：2002-11-06

申请人： Fujitsu Microelectronics Limited

发明人： Ikeda, Masanobu ,  Suzuki, Takashi

IPC分类号： H01L21/768

CPC分类号： H01L21/314 ,  C23C16/325 ,  H01L21/76811 ,  H01L21/76834 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1087437B1

公开(公告)日：2008-07-23

申请号：EP00308252.6

申请日：2000-09-21

申请人： APPLIED MATERIALS, INC.

发明人： Xia, Li-Qun ,  Yieh, Ellie

IPC分类号： H01L21/762 ,  H01L21/316 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01L21/31625 ,  C23C16/401 ,  C23C16/4405 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31051 ,  H01L21/314 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/67276

公开(公告)号：EP1652890A4

公开(公告)日：2006-09-13

申请号：EP04747118

申请日：2004-07-07

申请人： AZ ELECTRONIC MATERIALS USA

发明人： AOKI TOMOKO ,  AOKI HIROYUKI

IPC分类号： C08L83/16 ,  C01B33/12 ,  C08K5/49 ,  C09D183/16 ,  H01L21/312 ,  H01L21/314 ,  H01L21/768

CPC分类号： H01L21/76837 ,  C08K5/49 ,  C08L83/16 ,  C09D183/16 ,  H01L21/314

摘要： Disclosed is a phosphorus-containing siliceous material having a relative dielectric constant of 3.5 or less. Also disclosed is a phosphorus-containing silazane composition which is characterized by containing a polyalkyl silazane and at least one phosphorus compound in an organic solvent. The composition is applied to a substrate to form a film, and the thus-formed film is preliminarily fired at 50-300˚C and then fired at 300-700˚C in an inert atmosphere, thereby forming a phosphorus-containing siliceous film. The phosphorus compound is preferably a pentavalent phosphate ester or a phosphazene compound.

摘要翻译： 本发明的一个目的是提供一种具有不大于3.5的特定介电常数的含磷硅质材料。 含磷的硅氮烷组合物gemäß到本发明可通过包括一个polyalkylsilazane和在有机溶剂中的至少一种磷化合物，其特征。 硅质含磷膜可以通过涂布该组合物至基板上形成以形成薄膜的所有中，然后在50〜300℃的温度下预焙，然后在惰性气氛中烘烤在温度300〜700℃ ， 磷化合物gemäß到本发明优选为五价磷酸酯或磷腈化合物。

公开(公告)号：EP1620877A2

公开(公告)日：2006-02-01

申请号：EP04749753.2

申请日：2004-04-05

申请人： International Business Machines Corporation

发明人： HEDRICK, Jeffrey, C. ,  HUANG, Elbert, E.

IPC分类号： H01L21/00

CPC分类号： H01L21/022 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/314 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76844 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.

公开(公告)号：EP1015136B1

公开(公告)日：2005-09-07

申请号：EP98926126.8

申请日：1998-05-29

申请人： SUSS MicroTec Lithography GmbH

发明人： MAHNEKE, Peter ,  BATCHELDER, William, T.

IPC分类号： B05D3/12 ,  B05D3/02 ,  B05C13/00 ,  B05C13/02 ,  H01L21/469 ,  B05C11/08 ,  B05D1/00 ,  G03F7/16 ,  H01L21/312

CPC分类号： G03F7/162 ,  B05C11/08 ,  B05D1/005 ,  H01L21/312 ,  H01L21/314

摘要： An apparatus (100) and a method for spin-coating chemicals over a surface of a substrate (130) is disclosed. The apparatus includes a bowl (102) for supporting a substrate (130), a plurality of drain holes defined below the level of the substrate (130), a lid (101) having a flat surface that mates with the bowl (102), and a plurality of injection holes (121) defined in the bowl (102) for applying a solvent to an underside of the substrate, are included. The plurality of injection holes (121) are defined in along an injection ring (227) that is configured to receive the liquid solvent that is to be applied near an outer radius of the underside of the substrate, and the injection ring (227) is spaced apart from the underside of the substrate (130).

公开(公告)号：EP1207217B1

公开(公告)日：2004-11-10

申请号：EP01121942.5

申请日：1997-08-29

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Sugahara, Gaku ,  Aoi, Nobuo ,  Arai, Koji ,  Sawada, Kazuyuki

IPC分类号： C23C16/40 ,  C23C16/26 ,  C23C16/30 ,  H01L21/314 ,  H01L21/316 ,  A47J37/07

CPC分类号： H01L21/02126 ,  C23C16/26 ,  C23C16/30 ,  C23C16/401 ,  H01L21/0212 ,  H01L21/02131 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807

公开(公告)号：EP1460685A1

公开(公告)日：2004-09-22

申请号：EP04005583.2

申请日：2004-03-09

申请人： Semiconductor Leading Edge Technologies, Inc.

发明人： Kaji, Naruhiko

IPC分类号： H01L21/768 ,  H01L21/312

CPC分类号： H01L21/0212 ,  H01L21/02263 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835

摘要： A semiconductor device comprises an inorganic film on a semiconductor substrate, an intermediate film on the inorganic film and containing silicon, and an organic film on the intermediate film and containing fluorine. The organic film is made of a fluorinated arylene film. The fluorinated arylene film is made of a poly(tetrafluoro-p-xylylene), or a derivative thereof, having recurring units of formula (1)
wherein X is hydrogen or fluorine. The inorganic film is made of a material that is selected from the group consisting of SiO 2 , SiN, SiC, SiOC, SiCN and SiON.

摘要翻译： 半导体器件包括半导体衬底上的无机膜，无机膜上的中间膜并含有硅，以及中间膜上的含氟的有机膜。 有机膜由氟化亚芳基膜制成。 氟化亚芳基膜由具有式（1）的重复单元的CH 2 CH（其中X是氢或氟）的聚（四氟对亚二甲苯基）或其衍生物制成。 无机膜由选自SiO 2，SiN，SiC，SiOC，SiCN和SiON的材料制成。