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公开(公告)号:EP2215282A4
公开(公告)日:2010-11-17
申请号:EP08837292
申请日:2008-10-09
IPC分类号: C23C16/00
CPC分类号: H01L21/67017 , C23C16/45508 , C23C16/45565 , C23C16/45574 , C23C16/4581 , C23C16/4584 , Y10T137/9247
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公开(公告)号:EP2215282A2
公开(公告)日:2010-08-11
申请号:EP08837292.5
申请日:2008-10-09
IPC分类号: C23C16/00
CPC分类号: H01L21/67017 , C23C16/45508 , C23C16/45565 , C23C16/45574 , C23C16/4581 , C23C16/4584 , Y10T137/9247
摘要: A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.
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公开(公告)号:EP2215282B1
公开(公告)日:2016-11-30
申请号:EP08837292.5
申请日:2008-10-09
IPC分类号: C23C16/00 , C23C16/455 , C23C16/458
CPC分类号: H01L21/67017 , C23C16/45508 , C23C16/45565 , C23C16/45574 , C23C16/4581 , C23C16/4584 , Y10T137/9247
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