公开(公告)号：EP2506435B1

公开(公告)日：2016-05-18

申请号：EP11160706.5

申请日：2011-03-31

申请人： WeEn Semiconductors Co., Ltd.

发明人： Ham, Nick ,  Huang, Ed ,  Zhang, Jianfeng ,  Warwick, Mark ,  Butler, Andrew ,  Jin, Minghao

IPC分类号： H03K17/725

CPC分类号： H03K17/725 ,  H01L2224/0603 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2924/00

摘要： A triac circuit comprises a triac having first and second main terminals (MT1,MT2) and a gate terminal and a thyristor connected between one of the main terminals (MT1,MT2) and a control terminal of the triac circuit. The thyristor is used to prevent turn on of the triac when it has turned on by temperature induced leakage currents.