公开(公告)号：EP4134457A1

公开(公告)日：2023-02-15

申请号：EP21783672.5

申请日：2021-03-03

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  A.L.M.T. Corp.

发明人： MAJIMA, Masatoshi ,  TOYOSHIMA, Gouhei ,  TAKASHIMA, Kouichi

IPC分类号： C22C1/05 ,  C22C26/00 ,  C25D7/00 ,  H01L23/373

摘要： A composite material of the present disclosure contains a plurality of diamond particles, copper, and at least one first element selected from the group consisting of silicon, chromium, cobalt, nickel, molybdenum, titanium, vanadium, niobium, tantalum and tungsten, wherein the content rate of the first element based on the total mass of the copper and the first element is 50 ppm or higher and 2,000 ppm or lower.

公开(公告)号：EP1976004B1

公开(公告)日：2017-02-15

申请号：EP06843018.0

申请日：2006-12-21

申请人： A.L.M.T. CORP.

发明人： TAKASHIMA, Kouichi ,  MORIGAMI, Hideaki ,  NARITA, Masashi

IPC分类号： H01L23/36 ,  H01L23/14 ,  H01S5/024

CPC分类号： H01L24/27 ,  H01L23/14 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01S5/0213 ,  H01S5/02484 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29144 ,  H01L2924/00012 ,  H01L2924/00014

公开(公告)号：EP1976004A1

公开(公告)日：2008-10-01

申请号：EP06843018.0

申请日：2006-12-21

申请人： A.L.M.T. CORP.

发明人： TAKASHIMA, Kouichi ,  MORIGAMI, Hideaki ,  NARITA, Masashi

IPC分类号： H01L23/36 ,  H01L23/14

CPC分类号： H01L24/27 ,  H01L23/14 ,  H01L23/3732 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01S5/0213 ,  H01S5/02484 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29144 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material. In the semiconductor element mounting substrate, a connecting surface to be connected with the light emitting element or the like is finished such that the number, per unit area, of at least either recesses or protrusions having a depth or height of 10µm to 40µm and a surface-direction diametrical size of 10µm to 3mm is 50/cm 2 or less, and on the connecting surface, a coating layer, which is formed of a solder or a brazing material, has a thickness of 1µm to 30µm, an arithmetic mean roughness R a of a roughness curve showing a surface roughness of R a ≤2µm, and a maximum height roughness R z of R z ≤15µm, and fills and covers the recesses or protrusions, is formed.