专利检索 ap:("ABB RESEARCH LTD.") AND inv:"DANIELSSON, Erik" 第 1 页

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发明公开
SEMICONDUCTOR DEVICE OF SIC WITH INSULATING LAYER AND A REFRACTORY METAL NITRIDE LAYER 审中-公开
标题翻译： WITH A绝缘层和金属氮化物REFRACTOR SIC半导体布置

公开(公告)号：EP1029357A2

公开(公告)日：2000-08-23

申请号：EP98956065.1

申请日：1998-11-13

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher , DANIELSSON, Erik

IPC分类号： H01L29/06 , H01L29/78 , H01L29/24

CPC分类号： H01L2924/0002 , H01L2924/00

摘要： A semiconductor device comprises at least one semiconductor layer (4) of SiC and a layer (8) of a refractory metal nitride separated by an insulating layer (7) being at least next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer (9) of SiO2 next to the SiC layer and a second sub layer (10) of Si3N4 located between the first sub layer and the metal nitride layer.