公开(公告)号：EP1029363A2

公开(公告)日：2000-08-23

申请号：EP98956064.4

申请日：1998-11-13

申请人： ABB RESEARCH LTD.

发明人： BIJLENGA, Bo ,  ZDANSKY, Lennart ,  HARRIS, Christopher ,  BAKOWSKI, Mietek ,  KONSTANTINOV, Andrey ,  GUSTAFSSON, Ulf

IPC分类号： H01L29/78 ,  H01L29/24

CPC分类号： H01L29/7802 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7813

摘要： A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

公开(公告)号：EP0958601A1

公开(公告)日：1999-11-24

申请号：EP97928614.0

申请日：1997-06-18

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  BAKOWSKI, Mietek ,  ZDANSKY, Lennart ,  BIJLENGA, Bo

IPC分类号： H01L21 ,  H01L29

摘要： In a method for producing a channel region layer in a SiC-layer for producing a voltage controlled semiconductor device a layer (1) of silicon being one of a) polycrystalline and b) amorphous is applied on top of the SiC-layer, an aperture (4) is etched in said silicon layer extending to the SiC-layer, a surface layer of a certain thickness of said silicon layer is oxidised, and the lateral extension of said channel region layer is determined by removing said oxidized layer and carrying out a further implantation into the area exposed by the so formed enlarged aperture.

公开(公告)号：EP0820642A1

公开(公告)日：1998-01-28

申请号：EP96910270.0

申请日：1996-04-09

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  KONSTANTINOV, Andrei ,  JANZEN, Erik

IPC分类号： H01L21 ,  H01L29

CPC分类号： H01L29/1608 ,  H01L21/0455 ,  H01L21/0465 ,  H01L21/318 ,  H01L29/6606 ,  Y10S148/126 ,  Y10S438/931 ,  Y10S438/945

摘要： A method for producing a semiconductor device having a semiconductor layer (1-3) of SiC comprises at least the steps of: a) appliction of a mask (4) on at least a portion of said SiC layer and b) a heat treatment of said SiC layer. The mask (4) is made of a material having crystalline AIN as only component or AIN as a major component of a crystalline alloy constituting said material.

公开(公告)号：EP0958609A2

公开(公告)日：1999-11-24

申请号：EP97915795.0

申请日：1997-03-18

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf ,  ANDERSSON, Mats

IPC分类号： H01L29 ,  H01L21

CPC分类号： H01L29/7802 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/7828

摘要： A field controlled semiconductor device of SiC comprises superimposed in the order mentioned at least a drain (12), a highly doped substrate layer (1) and a low doped n-type drift layer (2). It has also a highly doped n-type source region layer (6) and a source (11) connected thereto. A doped channel region layer (4) connects the source region layer to the drift layer, and a current is intended to flow therethrough when the device is in an on-state. The device has also a gate electrode (9). The channel region layer has a substantially lateral extension and is formed by a low doped n-type layer (4). The gate electrode (9) is arranged to influence the channel region layer from above for giving a conducting channel (17) created therein from the source region layer to the drift layer a substantially lateral extension.

公开(公告)号：EP0890183A2

公开(公告)日：1999-01-13

申请号：EP97915796.0

申请日：1997-03-18

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf

IPC分类号： H01L21 ,  H01L29

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

摘要： A transistor of SiC comprises superimposed a drain (13), a highly doped substrate layer (1), a low doped n-type drift layer (2), a p-type base layer being divided into a first lower highly doped base sub-layer (3) and an upper low doped second base sub-layer (4) on top thereof, a highly doped n-type source region layer (6) and a source (11). It also has an insulating layer (8) with a gate electrode (9) thereon arranged on top of the base layer and extending laterally from the source region layer to a n-type layer (7) connected to the drift layer.

公开(公告)号：EP1016142A2

公开(公告)日：2000-07-05

申请号：EP98931179.0

申请日：1998-06-26

申请人： ABB RESEARCH LTD.

发明人： BAKOWSKI, Mietek ,  GUSTAFSSON, Ulf ,  HARRIS, Christopher

IPC分类号： H01L29/24 ,  H01L29/06

CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/7606

摘要： A semiconductor device of planar structure, consisting of doped silicon carbide (SiC), comprising a pn junction, formed of a first conducting type layer (1) and on top thereof of a second conducting type layer (2), the edge of the second of said layers being provided with an edge termination (JTE) (3), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, where the pn junction and its JTE are covered by a third layer (4).

公开(公告)号：EP0820637A1

公开(公告)日：1998-01-28

申请号：EP96910271.0

申请日：1996-04-09

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  KONSTANTINOV, Andrei ,  JANZEN, Erik

IPC分类号： H01L21 ,  C23C14 ,  C30B31 ,  H01L29

CPC分类号： C23C14/48 ,  C30B31/22 ,  H01L21/046 ,  Y10S438/931

摘要： A method for introduction of an impurity dopant into a semiconductor layer (2) of SiC comprises a step (a) of ion implantation of said dopant in said semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amorphous near surface layer (6) is formed, and the implantation step is followed by a step of annealing said semiconductor layer at such a high temperature that said dopant diffuses into the non-implanted sub-layer (3) of said semiconductor layer following said near surface layer.

公开(公告)号：EP0960440A1

公开(公告)日：1999-12-01

申请号：EP98901632.0

申请日：1998-01-19

申请人： ABB RESEARCH LTD.

发明人： HERMANSSON, Willy ,  BIJLENGA, Bo ,  RAMBERG, Lennart ,  ROTTNER, Kurt ,  ZDANSKY, Lennart ,  HARRIS, Christopher ,  BAKOWSKI, Mietek ,  SCHÖNER, Adolf ,  LUNDBERG, Nils ,  ÖSTLING, Mikael ,  DAHLQUIST, Fanny

IPC分类号： H01L21 ,  H01L29

CPC分类号： H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： A Schottky diode of SiC has a substrate layer, a drift layer (2) and emitter layer regions (3) formed in the drift layer. A metal layer (4) is making an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making said two adjacent p-type emitter layer regions form a continuous depleted region (9) therebetween in this state.

公开(公告)号：EP0904603A2

公开(公告)日：1999-03-31

申请号：EP97915797.0

申请日：1997-03-18

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  KONSTANTINOV, Andrei ,  JANZEN, Erik

IPC分类号： H01L21 ,  H01L29

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/7397

摘要： An IGBT of SiC comprises superimposed a drain (1), a highly doped p-type substrate layer (2), a highly doped n-type buffer layer (3), a low doped n-type drift layer (4), a highly doped p-type base layer (5), a highly doped n-type source region layer (6) and source (7). The transistor also comprises a vertical trench (8) extending through the source region layer and the base layer and to the drift layer. It also comprises an additional low doped p-type layer (13) arranged laterally to the base layer, connecting it to an insulating layer (11) and extending vertically at least over the extension of the base layer. A gate electrode (12) is applied on the insulating layer for, upon applying a voltage to the gate electrode, forming a conducting inversion channel at the interface between said additional layer (13) and the insulating layer for electron transport from the source to the drain.

公开(公告)号：EP0857358A1

公开(公告)日：1998-08-12

申请号：EP96935676.0

申请日：1996-10-07

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  KONSTANTINOV, Andrey ,  JANZEN, Erik

IPC分类号： H01L29

CPC分类号： H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/267 ,  H01L29/7783

摘要： A semiconductor device comprises two adjacent semiconductor layers (2, 3) of different materials forming a heterojunction (1) therebetween. A first (2) of said layers has a larger gap between the conduction band and the valence band than the other, second layer (3) and it is doped with impurities providing charge for forming a high mobility surface channel (7) in the second layer at the interface between said layers. The second layer (3) is made of SiC and the first layer (2) is made of one of a) A1N and b) an alloy of A1N and other Group 3B-nitrides.