摘要:
A method and an apparatus are disclosed for causing ion bombardment of the substrate (3) during sputter deposition of an insulating or conducting material on a substrate (3) when using dual cathode (9, 10) or dual anode sputtering approaches. A novel electrical circuit including a center-tapped transformer (17) is disclosed to permit a controllable potential to be applied to the substrate (3) relative to the plasma potential, without the necessity of an additional power supply. Also disclosed are approaches which permit the use of an biasing supply (19 or 20), either dc or high frequency ac, and which can permit continuous discharging of the surface through alternate ion and electron bombardment.