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    METHOD OF OPERATING A PLASMA PROCESS SYSTEM AND A PLASMA PROCESS SYSTEM
    1.
    发明公开
    METHOD OF OPERATING A PLASMA PROCESS SYSTEM AND A PLASMA PROCESS SYSTEM 审中-公开

    公开(公告)号：EP4442853A1

    公开(公告)日：2024-10-09

    申请号：EP23460010.4

    申请日：2023-04-03

    申请人： TRUMPF Huettinger Sp. Z o. o.

    发明人： The designation of the inventor has not yet been filed

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3467 ,  C23C14/3485 ,  H01J37/3444

    摘要： Method of operating a plasma process system (1),
    the plasma process system (1) comprises:
    d) a plasma process chamber (2) with a plasma process chamber wall (3) being connected to an electrical potential, e. g. ground,
    e) a HiPIMS power supply (4) designed for supplying high voltage high power pulses,
    f) an electrode (5) inside the plasma chamber (2) connected to the HiPIMS power supply (4),
    the method of operating a plasma process system (1) comprising the steps:
    iv. the HiPIMS power supply (4) supplying pulses of high voltage with a first potential, in particular a negative potential, in relation to the plasma process chamber wall (3) to the electrode (5), and disconnecting in pulse off times (toff),
    v. the electrode is connected to a second potential opposite of the first potential, in particular a positive potential, in relation to the plasma process chamber wall (3) immediately before the pulses of high voltage with first potential.

    A power supply device for plasma processing
    2.
    发明授权
    A power supply device for plasma processing 有权
    等离子体处理用电源装置

    公开(公告)号：EP2648209B1

    公开(公告)日：2018-01-03

    申请号：EP13175148.9

    申请日：2009-02-17

    申请人： Solvix GmbH

    发明人： Bulliard, Albert ,  Oehen, Joël ,  Fragnière, Benoit

    IPC分类号： H01J37/32 ,  H01J37/34

    CPC分类号： H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

    摘要： A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit (10) for generating a voltage across output terminals (1, 2), and a first switch (25) connected between the power supply circuit and one (1) of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit (40) connected to the output terminals (1, 2) and to the power supply circuit (10). According to a second aspect the power supply device comprises an inductor (21) connected between the power supply circuit (10) and one (1) of the output terminals (1, 2), and a second switch (22) connected parallel to the inductor (21). According to a third aspect the power supply device comprises a controller (60) for controlling the power supply circuit (10) and the first switch (25). The controller (60) is configured to determine at least one delay parameter by means of a self-adaptive process.

    Methods of arc detection and suppression during rf sputtering of a thin film on a substrate
    8.
    发明公开
    Methods of arc detection and suppression during rf sputtering of a thin film on a substrate 审中-公开
    的薄膜的衬底上RF溅射期间电弧检测和抑制的方法

    公开(公告)号：EP2402980A3

    公开(公告)日：2014-03-05

    申请号：EP11171571.0

    申请日：2011-06-27

    申请人： First Solar Malaysia SDN.BHD

    发明人： Halloran, Sean Timothy

    IPC分类号： H01J37/34 ,  H01J37/32

    CPC分类号： H01J37/3444 ,  H01J37/32935 ,  H01J37/32944 ,  H01J37/3476

    摘要： Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target 104 onto a substrate 12 are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target 104 to form a plasma 110. Upon formation of an arc 112 extending from the target 104, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target 104 to suppress the arc 112 extending from the target 104. Thereafter, the alternating current from the electrical power supply 102 can be reapplied to the semiconducting target 104.

    Film formation apparatus and film formation method
    10.
    发明公开
    Film formation apparatus and film formation method 审中-公开
    成膜装置和成膜方法

    公开(公告)号：EP2587519A2

    公开(公告)日：2013-05-01

    申请号：EP12189677.3

    申请日：2012-10-24

    申请人： Kabushiki Kaisha Kobe Seiko Sho

    发明人： Hirota, Satoshi ,  Yamamoto, Kenji ,  Tamagaki, Hiroshi

    IPC分类号： H01J37/34

    CPC分类号： H01J37/3405 ,  H01J37/3444 ,  H01J37/3452

    摘要： A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.