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1.发明公开IMPROVED CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER AND ASSOCIATED MATERIALS AND METHOD OF USING SAME 审中-公开改进的CMP组合物为使用铜和相关材料及方法
公开(公告)号：EP1631416A4
公开(公告)日：2007-04-04
申请号：EP04751828
申请日：2004-05-10
发明人： DARSILLO MICHAEL , WRSCHKA PETER , BOGGS KARL
IPC分类号： B24D3/02 , B24B1/00 , C09C1/68 , C09G1/02 , C09K3/14 , C23F3/06 , H01L21/302 , H01L21/321 , H01L21/461
CPC分类号： C09G1/02 , C09K3/1463 , C09K3/1472 , C23F3/06 , H01L21/3212
摘要： A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.
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2.发明公开PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION 审中-公开PASSIVATIVE CMP-ZUSAMMENSETZUNG ZURKUPFERFILMPLANARISIERUNG
公开(公告)号：EP1570015A4
公开(公告)日：2006-01-25
申请号：EP03812786
申请日：2003-12-02
发明人： LIU JUN , WRSCHKA PETER , BERNHARD DAVID , KING MACKENZIE , DARSILLO MICHAEL , BOGGS KARL
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
摘要翻译： 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂组合。 这种CMP组合物有利地不含BTA，并且可用于抛光半导体衬底上的铜元件表面，即使在存在大量铜离子的情况下，抛光铜也不会出现凹陷或其他不利平面化缺陷， 在CMP处理期间在铜/ CMP组合物界面处的块体CMP组合物中的Cu 2+。
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公开(公告)号：EP2441084A4
公开(公告)日：2014-05-28
申请号：EP10786688
申请日：2010-06-08
发明人： LURCOTT STEVEN M , HUGHES JOHN E Q , WRSCHKA PETER , BAUM THOMAS H , WARE DONALD D , ZOU PENG
IPC分类号： H01L21/02 , B01F3/08 , B01F15/02 , B67D7/02 , H01L21/027 , H01L21/20 , H01L21/302 , H01L21/304
CPC分类号： B01F15/0203 , B01F3/0861 , B01F15/0258 , B01F2003/0896 , B65B3/14 , B67D7/025 , B67D7/0261 , B67D7/0283 , B67D7/741
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4.发明公开CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR STEP-II COPPER LINER AND OTHER ASSOCIATED MATERIALS AND METHOD OF USING SAME 审中-公开对于步骤二铜套等其他相关材料CMP组合物及其使用方法
公开(公告)号：EP1622742A4
公开(公告)日：2009-06-10
申请号：EP04751836
申请日：2004-05-10
发明人： WRSCHKA PETER , BERNHARD DAVID , BOGGS KARL , DARSILLO MICHAEL
IPC分类号： H01L21/302 , C09G1/02 , C09K3/14 , H01L21/321 , H01L21/461
CPC分类号： C09K3/1463 , C09G1/02 , C23F3/04 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： A CMP composition and process for planarization of a semiconductor wafer surface having a copper barrier layer portion, said composition comprising an oxidizing agent, a boric acid component, and an abrasive.
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