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公开(公告)号:EP3807442A1
公开(公告)日:2021-04-21
申请号:EP19729292.3
申请日:2019-06-11
发明人: BUSARDO, Denis , VENTELON, Lionel
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公开(公告)号:EP3807444A1
公开(公告)日:2021-04-21
申请号:EP19729294.9
申请日:2019-06-11
发明人: BUSARDO, Denis , VENTELON, Lionel , DANACI, Simge
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公开(公告)号:EP3807443A1
公开(公告)日:2021-04-21
申请号:EP19729293.1
申请日:2019-06-11
发明人: BUSARDO, Denis , VENTELON, Lionel
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公开(公告)号:EP3442919A1
公开(公告)日:2019-02-20
申请号:EP17709461.2
申请日:2017-03-13
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公开(公告)号:EP3209623A1
公开(公告)日:2017-08-30
申请号:EP15786897.7
申请日:2015-10-21
IPC分类号: C03C23/00
CPC分类号: C03C23/0055 , C23C14/48
摘要: The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 10
14 ions/cm² and 2,5 x 10
17 ions/cm².The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.摘要翻译: 本发明涉及一种通过注入简单的电荷和多电荷离子来提高玻璃基片的耐刮擦性的方法,包括将待处理的玻璃基片的区域的温度保持在小于或等于玻璃化转变温度 在Ar,He和N的离子中选择要注入的离子,将用于提取离子的加速电压设置在5kV和200kV之间的值,并将离子剂量设置为一个值 包括在1014离子/平方厘米和2.5×1017离子/平方厘米之间。本发明还涉及玻璃基底,其包括根据该工艺通过植入简单电荷和多电荷离子进行处理的区域,以及它们用于降低刮擦玻璃的可能性 衬底机械接触。
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