公开(公告)号：EP1443525A2

公开(公告)日：2004-08-04

申请号：EP03104831.7

申请日：2003-12-19

申请人： AGFA-GEVAERT

发明人： Lamotte, Johan ,  Verelst, Jean ,  Struye, Luc ,  Leblans, Paul

IPC分类号： G21K4/00

CPC分类号： G21K4/00 ,  C09K11/7733

摘要： In a method for producing a binderless Eu-doped CsBr-type storage phosphor screen from a combination of phosphor precursors in order to prepare a CsBr:Eu storage phosphor by vacuum depositing said CsBr:Eu phosphor on a substrate, wherein during a vacuum depositing step said substrate is kept at a temperature T, such that 50 °C ≤ T ≤ 300 °C and wherein said vacuum deposition proceeds in an Ar-atmosphere with an Ar-pressure of at most 3 Pa; during or after at least one of the said steps a radiation exposure treatment is given with energy from radiation sources emitting short ultraviolet radiation in the range from 150 nm to 300 nm with an energy of at least 10 mJ/mm 2 .

摘要翻译： 在由荧光体前体的组合制造无粘结剂Eu掺杂CsBr型存储荧光屏的方法中，为了通过在衬底上真空沉积所述CsBr:Eu荧光体来制备CsBr:Eu存储荧光体，其中在真空沉积步骤 所述衬底保持在温度T，使得50℃≤T≤300℃，并且其中所述真空沉积在氩气氛中以至多3Pa的氩气压力进行; 在所述步骤中的至少一个步骤期间或之后，利用来自发射150nm至300nm范围内的短紫外辐射并具有至少10mJ / mm 2的能量的辐射源的能量给予辐射暴露处理。

公开(公告)号：EP1443525A3

公开(公告)日：2004-08-18

申请号：EP03104831.7

申请日：2003-12-19

申请人： AGFA-GEVAERT

发明人： Lamotte, Johan ,  Verelst, Jean ,  Struye, Luc ,  Leblans, Paul

IPC分类号： G21K4/00 ,  C09K11/465

CPC分类号： G21K4/00 ,  C09K11/7733

摘要： In a method for producing a binderless Eu-doped CsBr-type storage phosphor screen from a combination of phosphor precursors in order to prepare a CsBr:Eu storage phosphor by vacuum depositing said CsBr:Eu phosphor on a substrate, wherein during a vacuum depositing step said substrate is kept at a temperature T, such that 50 °C ≤ T ≤ 300 °C and wherein said vacuum deposition proceeds in an Ar-atmosphere with an Ar-pressure of at most 3 Pa; during or after at least one of the said steps a radiation exposure treatment is given with energy from radiation sources emitting short ultraviolet radiation in the range from 150 nm to 300 nm with an energy of at least 10 mJ/mm 2 .

公开(公告)号：EP1443525B1

公开(公告)日：2006-12-06

申请号：EP03104831.7

申请日：2003-12-19

申请人： AGFA-GEVAERT

发明人： Lamotte, Johan ,  Verelst, Jean ,  Struye, Luc ,  Leblans, Paul

IPC分类号： G21K4/00 ,  C09K11/77

CPC分类号： G21K4/00 ,  C09K11/7733

公开(公告)号：EP1453064A1

公开(公告)日：2004-09-01

申请号：EP03104825.9

申请日：2003-12-19

申请人： AGFA-GEVAERT

发明人： Lamotte, Johan ,  Verelst, Jean ,  Struye, Luc ,  Leblans, Paul

IPC分类号： G21K4/00

CPC分类号： G21K4/00 ,  C09K11/7733

摘要： A Eu-doped CsBr-type storage phosphor screen or panel has been disclosed, providing ratios of ultraviolet luminescence intensities of at least 10/9 after having been exposed to radiation having a wavelength in the range from 150 to 400 nm , measured at same sites without and with pretreatment exposure of said storage phosphor screen or panel with short ultraviolet radiation in the range from 150 to 300 nm and having an energy of 10 mJ/mm 2 , as well as a method of producing a stimulable phosphor screen or panel, characterised in that during or after at least one of the manufacturing steps a radiation exposure treatment is given with radiation sources emitting short ultraviolet radiation in the range from 150 to 300 nm with an energy of at least 10 mJ/mm 2 .

摘要翻译： 已经公开了Eu掺杂的CsBr型存储荧光屏或面板，其在暴露于波长在150至400nm的辐射之后提供至少10/9的紫外发光强度的比率，在相同位置 所述存储荧光屏或具有150nm至300nm的短紫外辐射和具有10mJ / mm 2的能量的面板的预处理曝光以及产生可刺激荧光屏或面板的方法 其特征在于，在所述制造步骤中的至少一个之后或之后，以150至300nm的范围内发射短紫外辐射的辐射源以至少10mJ / mm 2的能量给予辐射曝光处理。