公开(公告)号：EP1158071B1

公开(公告)日：2011-01-19

申请号：EP01111582.1

申请日：2001-05-11

申请人： APPLIED MATERIALS, INC.

发明人： Rossman, Kent ,  Li, Zhuang ,  Lee, Young

IPC分类号： C23C16/44 ,  H01L21/00 ,  H01L21/316 ,  H01L21/762

CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

公开(公告)号：EP1158071A2

公开(公告)日：2001-11-28

申请号：EP01111582.1

申请日：2001-05-11

申请人： Applied Materials, Inc.

发明人： Rossman, Kent ,  Li, Zhuang ,  Lee, Young

IPC分类号： C23C16/44 ,  H01L21/00

CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm 2 . The energy is inductively coupled into the process chamber by coupling a top coil with a top portion of the process chamber above the surface of the substrate and coupling a side coil with a side portion of the process chamber generally surrounding the side edge of the substrate. The top coil is powered at a top RF power level to produce a top power density and the side coil is powered at a side RF power level to produce a side power density. The total RF power density is equal to the sum of the top and side power densities. The top power density and the side power density desirably have a ratio of at least about 1.5. The high source plasma power density generates a high ion density plasma and produces a more directional deposition, and a higher top power density relative to the side power density produces a more uniform plasma over the substrate, resulting in improved trench fill, particularly for aggressive trenches having aspect ratios of about 3:1 to 4:1. The process gas typically includes silicon, oxygen, and an inert component having a concentration of less than about 40%, by volume. In specific embodiments, the concentration of the inert component is equal to about 0%.

摘要翻译： 沉积沟槽填充材料以填充设置在处理室中的衬底中的沟槽。 将惰性气体引入到处理室中，并且形成等离子体以将衬底加热到​​预设温度，该预设温度通常是要在其上进行沉积沟槽填充材料的温度。 等离子体在达到基板的预设温度时终止。 然后，处理气体不经等离子体激发流入处理室，直到处理气体流动和分布在处理室中达到通常稳定的状态。 然后形成等离子体以将沟槽填充材料沉积在衬底的表面上并填充沟槽。 通过在沉积之前在腔室中建立大体上稳定的状态条件，减少了瞬态效应，并且获得了更均匀的填充材料的沉积。 形成等离子体的步骤通常包括以至少约15瓦/ cm 2的总功率密度将源等离子体能量耦合到处理室中。

公开(公告)号：EP1158071A3

公开(公告)日：2006-07-19

申请号：EP01111582.1

申请日：2001-05-11

申请人： APPLIED MATERIALS, INC.

发明人： Rossman, Kent ,  Li, Zhuang ,  Lee, Young

IPC分类号： C23C16/44 ,  H01L21/00

CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm 2 .